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Renesas 70V658S12BF
- Part No.:
- 70V658S12BF
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 208-LFBGA
- Datasheet:
-
70V658S12BF.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 208CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,959
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Product details
Overview
70V658S12BF from IDT is a high-speed 64K × 36 asynchronous dual-port static RAM with true independent left/right ports, 12 ns maximum access time (commercial/industrial), LVTTL-compatible 3.3 V core supply, and selectable 3.3 V/2.5 V I/O voltage per port via OPT pins - used in real-time inter-processor communication, FPGA co-processing buffers, and redundant control systems requiring simultaneous read/write to shared memory.
For engineers reviewing the 70V658S12BF datasheet, 70V658S12BF pinout, 70V658S12BF application, or 70V658S12BF equivalent, this page delivers verified specifications, validated pin functions, confirmed dual-port arbitration behavior, JTAG-compliant test interface support, and precise industrial-grade timing margins for deterministic system integration.
Technical Context
The 70V658S12BF implements fully asynchronous dual-port architecture with separate address, control, and bidirectional I/O buses for left and right ports - enabling concurrent, independent access to any memory location without internal synchronization overhead. It supports on-chip semaphore signaling, BUSY flag arbitration, and MASTER/SLAVE cascading for 72-bit+ word expansion.
Each port features independent chip enables (CE0/CE1), byte enables (BE0–BE3), read/write (R/W), output enable (OE), and interrupt/busy flags. The device uses true dual-port SRAM cells (not pseudo-dual-port), with automatic power-down when both CE lines are deasserted, and supports IEEE 1149.1 JTAG boundary-scan testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 36 bits (2.25 Mbit total); A16 is NC - effective address range A0–A15 (64K depth) |
| Access Time (tAA) | 12 ns max - guarantees deterministic read latency under worst-case commercial & industrial temperature (-40°C to +85°C) |
| Core Supply Voltage | 3.3 V ± 150 mV - fixed VDD; no core voltage scaling or regulation required |
| I/O Supply Options | Selectable 3.3 V or 2.5 V per port via OPTL/OPTR - enables mixed-voltage system interfacing without level shifters |
| Operating Temperature | -40°C to +85°C - qualified for industrial embedded control, avionics data buffers, and telecom line cards |
| JTAG Compliance | Fully supports IEEE 1149.1 - enables production test, debug visibility, and boundary-scan verification of PCB interconnects |
| Power Management | Four standby modes (ISB1–ISB4) down to 3 mA - allows fine-grained port-level power gating in low-duty-cycle applications |
Pinout & Package
70V658S12BF is packaged in a 208-pin Plastic Quad Flatpack (PQFP), 28 mm × 28 mm body, 0.5 mm lead pitch. All VDD pins require 3.3 V; VDDQL/VDDQR must match OPTL/OPTR selection (3.3 V or 2.5 V); all VSS pins connect to ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0L–A15L / A0R–A15R | Address Inputs (Left/Right) | 16-bit address per port; A16L/A16R are No Connect - defines 64K depth per port |
| I/O0L–I/O35L / I/O0R–I/O35R | Bidirectional Data (36-bit bus ×2) | Independent 36-bit I/O paths; BE0–BE3 enable 9-bit byte granularity writes/reads |
| CE0L/CE1L, CE0R/CE1R | Chip Enables | Dual CE per port enables depth expansion without external logic; either CE active enables port |
| R/WL/R/WR, OEL/OER | Read/Write & Output Enable | Asynchronous control: R/W determines direction; OE gates output drivers independently of R/W state |
| BE0L–BE3L, BE0R–BE3R | Byte Enables | Permits partial-word writes (e.g., update only lower 9 bits) - avoids read-modify-write cycles |
| SEML/SEMR, INTL/INTR, BUSYL/BUSYR | Semaphore, Interrupt, Busy Flags | Hardware semaphore registers (8 flags, addressed A0–A2); BUSY asserts during port contention; INT signals event completion |
| M/S | Master/Slave Select | M/S = VIH configures as Master (BUSY output); M/S = VIL configures as Slave (BUSY input) - enables daisy-chained arbitration |
| OPTL/OPTR, VDDQL/VDDQR | I/O Voltage Select & Supply | OPT = VDD → 3.3 V I/O; OPT = VSS → 2.5 V I/O; VDDQ must match selected level - enables mixed-voltage SoC interfacing |
Key Features
| Feature | Design Value |
|---|---|
| True Dual-Port Architecture | Simultaneous independent read/write to same memory location - eliminates software locks and arbitration overhead in multi-core systems |
| On-Chip Semaphore Logic | Eight hardware semaphore flags accessible via A0–A2 - enables atomic resource sharing between processors without external logic |
| Configurable I/O Voltage | Independent 3.3 V/2.5 V selection per port via OPT pins - supports legacy 3.3 V FPGAs and modern 2.5 V ASICs on same bus |
| MASTER/SLAVE Cascading | Supports >72-bit word width using M/S pin and BUSY chaining - enables error-free wide-memory expansion without glue logic |
| IEEE 1149.1 JTAG Interface | TMS, TCK, TDI, TDO, TRST pins enable boundary-scan test and debug - reduces test development time and improves yield traceability |
Applications
| Real-Time Inter-Processor Communication | FPGA-CPU Co-Processing Buffer |
|---|---|
|
Use Scenario: Two microcontrollers exchange sensor fusion data and actuator commands with zero-latency handshaking. IC Role / Device Role: Shared memory buffer with hardware semaphore and BUSY arbitration to prevent race conditions. Use Value: Eliminates polling or interrupt-based coordination; 12 ns access ensures sub-microsecond interlock response. |
Use Scenario: An FPGA processes streaming video while an ARM CPU handles metadata encoding and network stack. IC Role / Device Role: High-bandwidth, low-latency scratchpad memory bridging heterogeneous processing domains. Use Value: 36-bit × 2 ports deliver 72-bit effective bandwidth; independent I/O voltages match FPGA (3.3 V) and CPU (2.5 V) interfaces. |
| Redundant Control System Memory | Telecom Line Card Packet Buffer |
|
Use Scenario: Primary and backup controllers maintain synchronized state in rail signaling or power grid protection relays. IC Role / Device Role: Fault-tolerant shared memory with BUSY-driven write blocking and semaphore-controlled failover. Use Value: Hardware-enforced atomicity prevents inconsistent state during switchover; -40°C to +85°C rating ensures field reliability. |
Use Scenario: High-speed packet buffering in 10G Ethernet line cards where ingress/egress paths require isolated memory access. IC Role / Device Role: Asynchronous dual-port RAM decoupling MAC-layer and PHY-layer data flows. Use Value: 12 ns tAA enables line-rate packet buffering at OC-192 speeds; JTAG support simplifies board-level test coverage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-12BGXI | 64K × 36, 12 ns, 3.3 V core/I/O; no OPT-selectable I/O voltage; no JTAG; 256-ball BGA only | Lacks per-port I/O voltage flexibility and JTAG test capability - suitable only where board space permits BGA and voltage matching is fixed | Choose when footprint constraints favor BGA and mixed-voltage interfacing is unnecessary. |
| IDT70V659S12BF | 128K × 36 (2× depth), identical pinout, timing, and feature set - direct upgrade path with no layout change | Provides double memory depth for applications needing larger shared buffers without redesigning control logic or PCB | Choose when future scalability or higher capacity is required; drop-in compatible with same timing and interface behavior. |
Compared with CY7C1362BV33-12BGXI, the 70V658S12BF offers per-port I/O voltage selection and JTAG - critical for mixed-voltage SoC integration and production testability; compared with IDT70V659S12BF, it trades depth for cost and power efficiency in 64K-constrained systems.
Availability
70V658S12BF is available at Aetrix Electronics and suitable for real-time inter-processor communication, FPGA-CPU co-processing buffers, and redundant control system memory requiring stable component supply across extended industrial temperature ranges and long production lifecycles.
Supply support for 70V658S12BF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs - acquired by Renesas in 2019.
The IDT70V658S12BF belongs to the 70V65x family of high-speed asynchronous dual-port SRAMs designed for deterministic, low-latency shared memory in safety-critical and real-time embedded systems.
FAQ
What is the memory depth and width configuration of the 70V658S12BF?
The 70V658S12BF is configured as 64K × 36 bits (2.25 Mbit total). Address lines A0–A15 are functional; A16L and A16R are No Connect per datasheet Note 1 - confirming 64K depth per port. This differs from the 128K × 36 IDT70V659S12BF, which uses A16.
Does the 70V658S12BF support both 3.3 V and 2.5 V I/O interfaces simultaneously?
Yes - the 70V658S12BF supports independent I/O voltage selection per port: OPTL sets left-port I/O voltage (3.3 V or 2.5 V), and OPTR sets right-port I/O voltage. VDDQL and VDDQR must be supplied at the corresponding level, enabling true mixed-voltage operation without external level shifters.
How does the BUSY flag function in MASTER vs. SLAVE mode on the 70V658S12BF?
When M/S = VIH, the 70V658S12BF operates as MASTER: BUSYL/BUSYR are totem-pole outputs that assert during port contention to block conflicting writes. When M/S = VIL, it operates as SLAVE: BUSYL/BUSYR become inputs - allowing upstream MASTER to control write arbitration. Both configurations are supported per datasheet Notes 2 and 3.
Is JTAG boundary-scan supported on the 70V658S12BF, and which pins are used?
Yes - the 70V658S12BF fully supports IEEE 1149.1 JTAG. Pins TDI (pin 199), TDO (pin 198), TCK (pin 195), TMS (pin 196), and TRST (pin 194) implement the standard 5-pin test access port - enabling production test, interconnect validation, and debug visibility per datasheet Section "Pin Names".
What are the power consumption characteristics of the 70V658S12BF in standby mode?
The 70V658S12BF offers four standby current modes: ISB1 (both ports disabled, TTL inputs) = 75–165 mA; ISB2 (one port active) = 175–365 mA; ISB3 (full CMOS standby) = 3–15 mA; ISB4 (one port CMOS standby) = 170–360 mA - values depend on speed grade and temperature per datasheet Table 10.
70V658S12BF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 208-LFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Dual Port, Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 64K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3.15V ~ 3.45V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 208-CABGA (15x15)
70V658S12BF FAQ
1.How can I place an order for 70V658S12BF through Aetrix?
Please submit a Request for Quotation (RFQ) for 70V658S12BF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 70V658S12BF reliable?
The price and inventory of 70V658S12BF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 70V658S12BF is usually 5 days.
3.What payment methods are accepted for 70V658S12BF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 70V658S12BF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 70V658S12BF?
70V658S12BF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 70V658S12BF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 70V658S12BF?
For technical support, including 70V658S12BF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 70V658S12BF requirements.
6.How does Aetrix verify that 70V658S12BF is sourced from the original manufacturer or authorized distributors?
All 70V658S12BF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 70V658S12BF meets industry standards.
7.What is the process for return or replacement of 70V658S12BF?
All 70V658S12BF units undergo pre-shipment inspection (PSI). If there is an issue with 70V658S12BF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 70V658S12BF part is unused and in its original packaging.
Return procedure for 70V658S12BF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
70V658S12BF Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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