Renesas 70V7319S133BF

Overview

70V7319S133BF from IDT (Integrated Device Technology) is a high-speed, synchronous, bank-switchable dual-ported SRAM with 256K × 18-bit organization (4 Mbit), designed for low-latency, concurrent read/write access across independent left and right ports. It operates at 133 MHz (7.5 ns cycle time), supports industrial temperature range (–40°C to +85°C), and features selectable 3.3V or 2.5V I/O interfaces per port via OPT pins - used in telecom line cards, packet buffer systems, and real-time video frame stores.

For engineers reviewing the 70V7319S133BF datasheet, 70V7319S133BF pinout, 70V7319S133BF application, or 70V7319S133BF equivalent, key selection criteria include bank-switchable arbitration for non-blocking dual-port access, pipelined/flow-through output mode selection, JTAG IEEE 1149.1 compliance, and dual VDDQ support enabling mixed-voltage system integration without level shifters.

Technical Context

This device implements a true SRAM core with 64 independent 4K × 18 banks, where bank access is directly controlled by six dedicated bank address pins (BA0–BA5) per port. Unlike traditional dual-ports, it avoids internal bus contention by enforcing strict bank-level arbitration: simultaneous access to the same bank by both ports invalidates both operations.

It supports full synchronous operation on both ports with registered inputs (address, control, data), enabling tight timing margins: 1.5 ns setup / 0.5 ns hold on all inputs at 200 MHz, and self-timed write for minimal cycle time. The counter enable (CNTEN) and repeat (REPEAT) functions allow burst-addressed sequential access across bank boundaries without external logic.

Key Specifications

Pinout & Package

70V7319S133BF is housed in a 208-pin fine-pitch Ball Grid Array (fpBGA, package code BF208), measuring 15 mm × 15 mm × 1.4 mm with 0.8 mm ball pitch. All VDD pins require 3.3 V ±150 mV; VDDQ pins must be supplied at 3.3 V (if OPT = VIH) or 2.5 V (if OPT = VIL) per port; all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C3256B-133JCIN, the 70V7319S133BF uniquely delivers bank-switchable arbitration for true non-blocking dual-port access, per-port voltage selection, and integrated JTAG - making it optimal for high-reliability, mixed-voltage, real-time embedded systems requiring deterministic latency and testability.

Availability

70V7319S133BF is available at Aetrix Electronics and suitable for telecom infrastructure, broadcast video processing, industrial motion control, and FPGA-based protocol acceleration requiring stable component supply across extended product lifecycles.

Supply support for 70V7319S133BF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The 70V7319S series was designed specifically for high-bandwidth, low-latency dual-port memory applications in telecom switching, video processing, and real-time control systems - emphasizing bank-level concurrency, flexible I/O voltage, and JTAG testability.

FAQ

What is the maximum operating frequency of the 70V7319S133BF?

The 70V7319S133BF is rated for 133 MHz operation, corresponding to a 7.5 ns clock cycle time in pipelined mode. This speed grade is qualified for both commercial and industrial temperature ranges (–40°C to +85°C), and the device achieves a 4.2 ns clock-to-data valid (tCD2) delay under these conditions. It is not rated for 166 MHz or 200 MHz operation - those speed grades require different part numbers (70V7319S166BF and 70V7319S200BF) and are not supported in the BF208 package.

Does the 70V7319S133BF support independent I/O voltage selection on each port?

Yes, the 70V7319S133BF supports independent I/O voltage selection per port via the OPTL and OPTR pins. Setting OPTL = VIL (0 V) configures the left port for 2.5 V I/O operation (requiring VDDQL = 2.5 V), while OPTL = VIH (3.3 V) configures it for 3.3 V operation (VDDQL = 3.3 V). The same applies independently to the right port via OPTR and VDDQR. This enables mixed-voltage system integration - for example, connecting the left port to a 2.5 V FPGA bank and the right port to a 3.3 V microcontroller bus - without external level shifters.

How does bank arbitration work in the 70V7319S133BF?

The 70V7319S133BF implements bank-level arbitration: each port selects a target bank using its own BA0–BA5 pins. If both ports attempt to access the same bank simultaneously, neither access is valid - reads return undefined data, and writes may corrupt memory contents. To ensure reliable operation, system design must guarantee BA0L–BA5L ≠ BA0R–BA5R at all times during concurrent access. This architecture eliminates internal bus contention but requires software or logic-layer coordination of bank allocation - unlike traditional dual-ports that serialize conflicting accesses transparently.

What is the purpose of the CNTEN and REPEAT signals in the 70V7319S133BF?

CNTEN (counter enable) and REPEAT are hardware-assisted address generation features. When CNTEN = LOW on the rising clock edge, the internal address counter advances automatically - crossing bank boundaries (e.g., from Bank 0, address FFFh to Bank 1, address 0h). REPEAT, when asserted, resets the counter to the last valid address loaded via ADS. These signals reduce CPU or controller overhead in sequential burst transfers (e.g., DMA-like operations), eliminating the need for software-managed address incrementing. They are fully synchronous and operate independently of CE0/CE1 states.

Is JTAG boundary-scan supported on the 70V7319S133BF?

Yes, the 70V7319S133BF includes full IEEE 1149.1 JTAG boundary-scan support via dedicated TMS, TCK, TDI, TDO, and TRST pins. This enables PCB-level interconnect testing, verification of solder joints and routing integrity, and in-system debugging of memory subsystems - especially valuable in high-density telecom and broadcast equipment where physical probe access is impractical. JTAG functionality is active regardless of memory operational mode and does not interfere with normal read/write operations.