Renesas 70V7319S133BFI

Overview

70V7319S133BFI from IDT (Integrated Device Technology) is a high-speed, synchronous, bank-switchable dual-ported SRAM with 256K × 18-bit (4 Mbit) capacity, organized into 64 independent 4K × 18 banks. It supports 133 MHz operation (7.5 ns clock cycle), industrial temperature range (–40°C to +85°C), and selectable 3.3 V or 2.5 V I/O interface per port via OPT pins. It is used in real-time packet buffering for telecom line cards and FPGA co-processing systems requiring concurrent read/write access.

For engineers reviewing the 70V7319S133BFI datasheet, 70V7319S133BFI pinout, 70V7319S133BFI application, or 70V7319S133BFI equivalent, key selection criteria include bank-switchable arbitration, pipelined/flow-through output mode selection, JTAG IEEE 1149.1 compliance, dual chip enable depth expansion, and independent voltage scaling per port - all critical for deterministic low-latency memory subsystems.

Technical Context

The 70V7319S133BFI implements a true SRAM core with bank-switchable architecture-not a traditional dual-port SRAM-enabling independent, non-conflicting access to any of 64 banks by left/right ports. Bank selection is controlled directly via BA0–BA5 pins on each port, with conflict detection preventing simultaneous access to the same bank.

It features fully synchronous operation on both ports, including registered address, control, and data inputs; self-timed write for minimal cycle time; and configurable pipeline (PL/FTL/R = VIH) or flow-through (PL/FTL/R = VIL) output modes. The device supports counter-enabled burst addressing with repeat functionality and asynchronous OE for output control.

Key Specifications

Pinout & Package

70V7319S133BFI is packaged in a 208-pin fine-pitch Ball Grid Array (fpBGA), body size ≈15 mm × 15 mm × 1.4 mm, 0.8 mm ball pitch. Pin functions are symmetric across left (L) and right (R) ports, with dedicated bank address (BA0–BA5), clock (CLKL/CLKR), strobe (ADSL/ADSR), and byte-enable (UBL/LBL, UBR/LBR) signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-ported SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256B-133JCIN, the 70V7319S133BFI uniquely delivers bank-switchable arbitration, per-port voltage selection, and counter-assisted burst addressing - making it the only option among the three capable of sustaining concurrent, collision-free access in dynamic, multi-threaded memory workloads.

Availability

70V7319S133BFI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and medical imaging systems requiring stable component supply, long-term manufacturability, and industrial temperature qualification.

Supply support for 70V7319S133BFI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF power solutions for communications and computing markets.

The 70V7319S product line was designed specifically for deterministic, low-latency dual-access memory subsystems in telecom line cards, FPGA acceleration platforms, and real-time industrial controllers - emphasizing bank-level concurrency and voltage-flexible I/O.

FAQ

What is the maximum operating frequency of the 70V7319S133BFI, and under what conditions is it guaranteed?

The 70V7319S133BFI is rated for 133 MHz operation (7.5 ns clock cycle time) across the full industrial temperature range (–40°C to +85°C). This speed grade is guaranteed with VDD = 3.3 V ±150 mV and VDDQ = 3.3 V (OPT pin = VIH) or 2.5 V (OPT pin = VIL), and applies to both pipelined and flow-through output modes. The 70V7319S133BFI does not support 166 MHz or 200 MHz operation in the BF208 fpBGA package.

How does bank-switching work in the 70V7319S133BFI, and what happens if both ports access the same bank simultaneously?

The 70V7319S133BFI uses BA0–BA5 pins on each port to select one of 64 independent 4K × 18 banks. If both ports assert identical bank addresses (BA0L–BA5L = BA0R–BA5R) on the same clock cycle, neither access is valid: writes may corrupt data, and reads return invalid output. The 70V7319S133BFI provides no internal arbitration - bank conflict avoidance must be implemented in system logic or firmware.

Can the left and right ports of the 70V7319S133BFI operate at different I/O voltages, and how is this configured?

Yes - the 70V7319S133BFI supports independent I/O voltage selection per port. OPTL configures the left port for 3.3 V (VIH) or 2.5 V (VIL); OPTR does the same for the right port. Corresponding VDDQL and VDDQR supplies must match the selected voltage. This allows the 70V7319S133BFI to interface with mixed-voltage FPGAs or ASICs without external level shifters.

Does the 70V7319S133BFI support JTAG boundary-scan, and which pins are required?

Yes - the 70V7319S133BFI fully complies with IEEE 1149.1 JTAG boundary-scan. Required pins are TCK (Test Clock), TMS (Test Mode Select), TDI (Test Data In), TDO (Test Data Out), and TRST (Test Reset). These signals are dedicated and do not share functions with memory control pins, enabling reliable in-system testability without impacting memory operation.

What is the difference between pipelined and flow-through output modes in the 70V7319S133BFI, and how is the mode selected?

Pipelined mode (PL/FTL/R = VIH) adds one clock-cycle latency but achieves faster clock-to-data valid times (tCD2 = 4.2 ns @ 133 MHz); flow-through mode (PL/FTL/R = VIL) delivers zero-cycle latency but slower tCD1 (15 ns @ 133 MHz). Mode selection is static per port and must be set before operation - it cannot be changed dynamically during active memory access.