Renesas 70V7319S133BFI8

Overview

70V7319S133BFI8 from IDT (Integrated Device Technology) is a high-speed, synchronous, bank-switchable dual-ported SRAM with 256K × 18-bit (4 Mbit) capacity, organized into 64 independent 4K × 18 banks. It operates at 133 MHz (7.5 ns cycle time), supports industrial temperature range (−40°C to +85°C), and features separate 3.3V core and selectable 3.3V/2.5V I/O supplies per port-enabling use in real-time packet buffering for telecom line cards.

For engineers reviewing the 70V7319S133BFI8 datasheet, 70V7319S133BFI8 pinout, 70V7319S133BFI8 application, or 70V7319S133BFI8 equivalent, key selection criteria include bank-switchable arbitration, pipelined/flow-through output mode selection, JTAG IEEE 1149.1 compliance, dual chip enables for depth expansion, and independent VDDQ voltage control per port.

Technical Context

The 70V7319S133BFI8 implements a true SRAM core-not a traditional dual-port architecture-enabling concurrent access to different 4K×18 banks via BA0–BA5 address bits on each port. Bank conflict detection is user-managed: simultaneous access to the same bank by both ports invalidates both operations and risks data corruption.

It supports two synchronous output modes: pipelined (tCD2 = 4.2 ns max, tCYC2 = 7.5 ns min) and flow-through (tCD1 = 15 ns max, tCYC1 = 25 ns min), selected independently per port via PL/FTL and PL/FTR pins. Address strobe (ADSL/ADSR) and counter enable (CNTENL/CNTENR) allow burst-addressing with repeat capability across bank boundaries.

Key Specifications

Pinout & Package

70V7319S133BFI8 is housed in a 208-pin fine-pitch Ball Grid Array (fpBGA) package with 0.8 mm ball pitch and 15 mm × 15 mm footprint. All VDD pins require connection to 3.3 V; VDDQL/VDDQR must match OPTL/OPTR logic level (3.3 V if OPT = VIH, 2.5 V if OPT = VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-ported SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C3256B-133BIN, the 70V7319S133BFI8 uniquely delivers per-port I/O voltage selection, JTAG testability, and hardware-accelerated burst addressing-making it optimal for mixed-voltage, high-reliability, and high-throughput embedded systems.

Availability

70V7319S133BFI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, avionics data logging, and medical imaging systems requiring stable component supply across extended product lifecycles.

Supply support for 70V7319S133BFI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 70V7319S product line was designed specifically for high-bandwidth, low-latency dual-access memory applications in networking equipment, real-time control systems, and digital signal processing platforms where concurrent read/write to disjoint memory regions is essential.

FAQ

What is the maximum operating frequency of the 70V7319S133BFI8?

The 70V7319S133BFI8 is rated for 133 MHz operation in both commercial and industrial temperature ranges. Its minimum clock cycle time is 7.5 ns in pipelined mode, and it achieves a clock-to-data valid delay of 4.2 ns maximum. This speed grade is supported in the 208-pin fpBGA package and is fully characterized over −40°C to +85°C.

Does the 70V7319S133BFI8 support both 2.5 V and 3.3 V I/O interfaces simultaneously?

Yes, the 70V7319S133BFI8 supports independent I/O voltage selection per port: OPTL and OPTR pins configure left and right ports separately for either 2.5 V (±100 mV) or 3.3 V (±150 mV) signaling. Corresponding VDDQL and VDDQR supplies must be set accordingly. This enables mixed-voltage system integration-for example, connecting a 2.5 V FPGA to a 3.3 V microcontroller via the same 70V7319S133BFI8 device.

How does bank conflict handling work in the 70V7319S133BFI8?

The 70V7319S133BFI8 does not include automatic bank arbitration. When both ports assert identical BA0–BA5 values, accesses to that bank are invalidated on both ports-potentially corrupting writes or returning invalid reads. System firmware or FPGA logic must ensure BAx values differ before initiating concurrent accesses. The functional description on page 19 of the datasheet explicitly states this behavior and recommends software/hardware coordination to avoid conflicts.

Is JTAG boundary-scan supported on the 70V7319S133BFI8?

Yes, the 70V7319S133BFI8 implements full IEEE 1149.1 JTAG boundary-scan functionality with dedicated TDI, TDO, TCK, TMS, and TRST pins. This allows in-circuit testing, interconnect verification, and debug visibility in high-density PCB assemblies-critical for telecom and avionics applications where physical probe access is limited.

What is the purpose of the CNTEN and REPEAT pins on the 70V7319S133BFI8?

CNTEN enables automatic address incrementing on each clock cycle, while REPEAT resets the internal counter to the last valid address loaded via ADS. Together, they support efficient burst-mode data transfers across bank boundaries-e.g., streaming sensor data into sequential addresses without CPU intervention. The counter advances from Bank 63 → Bank 0 on overflow, and both functions operate independently per port.