Renesas 70V7339S133BCI8

Overview

70V7339S133BCI8 from Integrated Device Technology is a high-speed 512K × 18 (9 Mbit) synchronous bank-switchable dual-ported SRAM with independent left/right ports, 133 MHz operation (4.2 ns max access), industrial temperature range (–40°C to +85°C), and selectable 3.3 V or 2.5 V I/O interface per port. It enables concurrent read/write access to separate 8K × 18 memory banks in telecom switching fabric and real-time packet buffering systems.

For engineers reviewing the 70V7339S133BCI8 datasheet, 70V7339S133BCI8 pinout, 70V7339S133BCI8 application, or 70V7339S133BCI8 equivalent, key selection criteria include bank-switchable arbitration, pipelined/flow-through output mode selection, JTAG IEEE 1149.1 compliance, dual chip enable for depth expansion, and independent VDDQ voltage control per port.

Technical Context

This device implements a true synchronous SRAM core-not a traditional dual-port-organized into 64 independent 8K × 18 banks. Bank access is controlled directly via six dedicated bank address pins (BA0–BA5) per port, enabling deterministic arbitration without internal contention logic.

Each port features fully registered inputs (address, data, control), self-timed write, and configurable pipeline/flow-through output timing. The 133 MHz speed grade supports industrial temperature operation only in the 256-pin BGA package (BC256), with 4.2 ns clock-to-data valid (tCD1) in flow-through mode and 4.2 ns tCD2 in pipelined mode.

Key Specifications

Pinout & Package

70V7339S133BCI8 is housed in a 256-pin Ball Grid Array (BC256) package with 1.0 mm ball pitch, 17 mm × 17 mm body size, and 1.4 mm height. Power and ground balls are distributed across the array for low-inductance decoupling; VDD (3.3 V core) and VDDQ (3.3 V or 2.5 V I/O) supplies are segregated per port.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C36256B-133BIN, the 70V7339S133BCI8 provides unique bank-switchable arbitration and per-port voltage configurability - eliminating external logic for depth expansion and enabling direct 2.5 V/3.3 V interoperability without level shifters.

Availability

70V7339S133BCI8 is available at Aetrix Electronics and suitable for telecom switching fabric, real-time packet buffering, industrial motion control, and radar signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V7339S133BCI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V7339S product line delivers bank-switchable dual-port SRAMs optimized for deterministic, low-latency data sharing between asynchronous processors, FPGAs, and ASICs in real-time infrastructure systems.

FAQ

What is the maximum operating frequency of the 70V7339S133BCI8?

The 70V7339S133BCI8 is rated for 133 MHz operation, corresponding to a minimum clock cycle time of 7.5 ns in pipelined mode (tCYC2). This speed grade is qualified for industrial temperature range (–40°C to +85°C) and supported exclusively in the 256-pin BC256 BGA package. The 70V7339S133BCI8 achieves 4.2 ns clock-to-data valid (tCD2) in pipelined mode and 15 ns in flow-through mode (tCD1).

Does the 70V7339S133BCI8 support mixed-voltage I/O operation?

Yes, the 70V7339S133BCI8 supports independent 3.3 V or 2.5 V I/O voltage selection per port via the OPTL and OPTR pins. When OPTL = VIL (0 V), the left port operates at 2.5 V I/O levels (VDDQL = 2.5 V); when OPTL = VIH (3.3 V), it operates at 3.3 V. The same applies to the right port via OPTR. The core VDD supply remains fixed at 3.3 V for both configurations.

How does bank-switching work on the 70V7339S133BCI8?

Bank-switching on the 70V7339S133BCI8 is implemented via six dedicated bank address pins per port (BA0L–BA5L and BA0R–BA5R), selecting one of 64 independent 8K × 18 memory banks. Concurrent access to the same bank by both ports invalidates both operations - users must ensure BA values differ (BA0L–BA5L ≠ BA0R–BA5R) to maintain data integrity. This architecture replaces traditional dual-port contention logic with user-directed bank arbitration.

What is the purpose of the CNTEN and REPEAT signals on the 70V7339S133BCI8?

CNTEN enables automatic address increment on each clock cycle, allowing sequential burst access without external address generation. REPEAT resets the internal counter to the last valid address loaded via ADS - useful for circular buffer or ping-pong operation. Both signals operate independently per port and function regardless of CE0/CE1 state, enabling robust burst control in packet processing and motion control applications using the 70V7339S133BCI8.

Is JTAG boundary-scan supported on the 70V7339S133BCI8?

Yes, the 70V7339S133BCI8 fully complies with IEEE 1149.1 JTAG standards, featuring dedicated TMS, TCK, TDI, TDO, and TRST pins. This enables boundary-scan testing of PCB interconnects, in-system programming verification, and diagnostic access to internal memory and control registers - critical for high-reliability telecom and industrial deployments of the 70V7339S133BCI8.