Renesas 70V7339S133BF8

Overview

70V7339S133BF8 from IDT (Integrated Device Technology) is a high-speed, synchronous, bank-switchable dual-ported SRAM with 512K × 18-bit (9 Mbit) capacity, organized into 64 independent 8K × 18 banks. It supports 133 MHz operation (7.5 ns cycle time), industrial temperature range (–40°C to +85°C), and selectable 3.3V/2.5V I/O interface per port via OPT pins. It is used in real-time packet buffering for telecom line cards and FPGA co-processor memory subsystems requiring concurrent read/write access.

For engineers reviewing the 70V7339S133BF8 datasheet, 70V7339S133BF8 pinout, 70V7339S133BF8 application, or 70V7339S133BF8 equivalent, key selection criteria include bank-switchable arbitration, pipelined/flow-through output mode selection, dual chip enable for depth expansion, JTAG IEEE 1149.1 compliance, and independent VDDQ voltage control per port.

Technical Context

The 70V7339S133BF8 implements a true SRAM core-not a traditional dual-port-enabling bank-level concurrency with user-controlled BA0–BA5 address mapping. Each port operates fully synchronously with dedicated clock, address, control, and 18-bit bidirectional I/O buses.

It features two independent pipeline/flow-through output modes (PL/FTL & PL/FTR), counter-enable/repeat logic for burst addressing, and self-timed write architecture enabling minimal 7.5 ns cycle time at 133 MHz. Port-to-port timing offset (tCO ≥ 7.5 ns) ensures deterministic inter-port data visibility.

Key Specifications

Pinout & Package

70V7339S133BF8 is housed in a 208-pin fine-pitch Ball Grid Array (fpBGA) package with 0.8 mm ball pitch and 15 mm × 15 mm footprint. All VDD pins require 3.3V supply; VDDQL/VDDQR must match OPTL/OPTR logic level (3.3V if VIH, 2.5V if VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-ported SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C35128P-133BIN, the 70V7339S133BF8 uniquely delivers bank-switchable concurrency, per-port I/O voltage selection, and IEEE 1149.1 JTAG - critical for high-integrity, mixed-voltage, and testable embedded systems.

Availability

70V7339S133BF8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, avionics data acquisition, and FPGA-based signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V7339S133BF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 70V7339S product line was designed for high-bandwidth, low-latency memory subsystems in synchronous digital systems - specifically targeting applications demanding concurrent port access, flexible voltage interfacing, and robust testability.

FAQ

What is the maximum operating frequency of the 70V7339S133BF8?

The 70V7339S133BF8 is rated for 133 MHz operation (7.5 ns clock cycle time) across the full industrial temperature range (–40°C to +85°C). This speed grade is validated for both commercial and industrial grades and supports pipelined output mode with 4.2 ns clock-to-data valid (tCD2) timing.

Does the 70V7339S133BF8 support independent I/O voltage selection per port?

Yes, the 70V7339S133BF8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL/OPTR to VIH configures the corresponding port for 3.3V I/O signaling (requiring VDDQL/VDDQR = 3.3V), while VIL configures it for 2.5V (requiring VDDQL/VDDQR = 2.5V). The core VDD remains fixed at 3.3V.

How does bank-switching work in the 70V7339S133BF8?

Bank-switching in the 70V7339S133BF8 is controlled by six bank address pins (BA0L–BA5L and BA0R–BA5R) per port. Each port selects one of 64 independent 8K×18 banks. If both ports attempt to access the same bank simultaneously, neither access is valid and data corruption may occur - users must ensure BAx values differ in real time.

What JTAG features does the 70V7339S133BF8 support?

The 70V7339S133BF8 implements full IEEE 1149.1 JTAG boundary-scan functionality with TMS, TCK, TDI, TDO, and TRST pins. It supports standard instruction register operations, device identification, and boundary-scan testing - enabling in-circuit validation and debug without physical probe access.

Can the 70V7339S133BF8 be used in depth-expanded memory configurations?

Yes, the 70V7339S133BF8 supports depth expansion using its dual chip enables (CE0X and CE1X). When configured with CE0X = VIL and CE1X = VIH, the device enters active mode; cascading multiple devices with decoded CE0X/CE1X pairs enables wider or deeper memory arrays without external address decoding logic.