Renesas 70V7339S133BFI8

Overview

70V7339S133BFI8 from Integrated Device Technology is a high-speed 512K × 18 (9 Mbit) synchronous bank-switchable dual-ported SRAM with independent left/right ports, 133 MHz operation (4.2 ns max access), selectable pipelined or flow-through output mode, and industrial temperature support (–40°C to +85°C). It enables concurrent read/write access to separate 8K × 18 memory banks in telecom switching fabric and real-time packet buffering.

For engineers reviewing the 70V7339S133BFI8 datasheet, 70V7339S133BFI8 pinout, 70V7339S133BFI8 application, or 70V7339S133BFI8 equivalent, key selection criteria include dual-port timing coordination, bank-address conflict avoidance, VDDQ voltage selection per port (2.5V/3.3V), JTAG IEEE 1149.1 compliance, and fpBGA-208 package thermal-mechanical constraints.

Technical Context

The 70V7339S133BFI8 implements a true SRAM core-not traditional dual-port-enabling bank-switchable access across 64 independent 8K × 18 blocks. Each port uses dedicated address, control, and I/O pins with full synchronous operation on both CLKL and CLKR.

Bank selection is controlled directly via BA0L–BA5L and BA0R–BA5R pins; simultaneous access to the same bank by both ports invalidates both operations. Pipelined mode delivers 4.2 ns clock-to-data (tCD2), while flow-through mode supports 25 ns cycle time (tCYC1) with no latency insertion.

Key Specifications

Pinout & Package

70V7339S133BFI8 is housed in a 208-pin fine-pitch Ball Grid Array (fpBGA) package with 0.8 mm ball pitch, 15 mm × 15 mm footprint, and 1.4 mm height. Power delivery requires 12× VDD (3.3 V core), 12× VSS (ground), and separate VDDQL/VDDQR supplies for each port's I/O domain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C35128PFS-133BIN, the 70V7339S133BFI8 uniquely combines per-port I/O voltage selection, bank-switchable arbitration, and integrated JTAG-making it optimal for mixed-signal telecom and industrial control where signal integrity, testability, and thermal robustness are co-constrained.

Availability

70V7339S133BFI8 is available at Aetrix Electronics and suitable for telecom switching fabric, real-time packet buffering, and industrial motion control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V7339S133BFI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V7339S product line delivers bank-switchable dual-port SRAMs optimized for deterministic, low-latency data sharing between asynchronous processing domains in telecom infrastructure and real-time control systems.

FAQ

What is the maximum operating frequency supported by the 70V7339S133BFI8?

The 70V7339S133BFI8 is rated for 133 MHz operation in both commercial and industrial temperature ranges. This corresponds to a 7.5 ns clock cycle time in pipelined mode and 25 ns in flow-through mode. The device achieves this using fully registered inputs and self-timed write architecture, ensuring timing closure in high-speed synchronous systems without external wait-state logic.

How does bank-switching prevent port contention in the 70V7339S133BFI8?

The 70V7339S133BFI8 uses BA0L–BA5L and BA0R–BA5R pins to independently select one of 64 memory banks per port. If both ports attempt simultaneous access to the same bank, neither operation is valid and data corruption may occur. Designers must ensure BAxL ≠ BAxR in real-time software or hardware arbitration logic-this explicit control distinguishes it from legacy dual-port SRAMs with fixed internal arbitration.

Can the left and right ports of the 70V7339S133BFI8 operate at different I/O voltages?

Yes. The 70V7339S133BFI8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VIH (3.3 V) configures VDDQL for 3.3 V operation; setting it to VIL (0 V) configures VDDQL for 2.5 V. The same applies to OPTR/VDDQR. Core VDD remains fixed at 3.3 V. This enables mixed-voltage system integration-for example, interfacing with 2.5 V FPGAs and 3.3 V microcontrollers simultaneously.

What is the purpose of the REPEAT and CNTEN signals in the 70V7339S133BFI8?

REPEAT and CNTEN enable autonomous address generation. When CNTENX = VIL, the internal counter advances on each CLKX rising edge. When REPEATX = VIH, the counter resets to the last address loaded via ADSX. This eliminates CPU overhead for sequential memory access patterns-critical in packet processing and waveform generation where burst reads/writes dominate. The counter wraps across bank boundaries (e.g., Bank 63 → Bank 0).

Does the 70V7339S133BFI8 support JTAG boundary-scan testing?

Yes. The 70V7339S133BFI8 implements IEEE 1149.1-compliant JTAG with TDI, TDO, TCK, TMS, and TRST pins. This enables full boundary-scan visibility of all I/O pins-including bank address, control, and data lines-supporting automated test, interconnect verification, and in-system programming of adjacent logic. JTAG functionality is active regardless of operating mode (pipelined or flow-through) or voltage configuration.