Renesas 70V7339S166BCI

Overview

70V7339S166BCI from IDT (Integrated Device Technology) is a high-speed, synchronous, bank-switchable dual-ported SRAM with 512K × 18-bit (9 Mbit) capacity, organized into 64 independent 8K × 18 banks. It operates at 166 MHz with 3.6 ns max clock-to-data access, supports selectable pipelined or flow-through output modes, and features dual chip enables for depth expansion. It is used in real-time packet buffering and parallel processor interconnects requiring deterministic low-latency memory access.

For engineers reviewing the 70V7339S166BCI datasheet, 70V7339S166BCI pinout, 70V7339S166BCI application, or 70V7339S166BCI equivalent, key selection criteria include industrial temperature support (−40°C to +85°C), dual-voltage I/O (2.5 V/3.3 V per port), JTAG IEEE 1149.1 compliance, bank-switching control via BA0–BA5 pins, and port-to-port timing offset tolerance of 6.0 ns.

Technical Context

The 70V7339S166BCI implements a true synchronous dual-port architecture using a bank-switchable SRAM core-not a traditional dual-port SRAM-enabling independent concurrent access to non-overlapping 8K × 18 banks. Each port has fully registered address, data, and control inputs with 1.5 ns setup and 0.5 ns hold times at 200 MHz.

It supports two distinct output timing models: pipelined mode (3.6 ns tCD2, 6 ns tCYC2) and flow-through mode (12 ns tCD1, 20 ns tCYC1), selected per port via PL/FTL and PL/FTR pins. Bank arbitration is user-managed via BA0L–BA5L and BA0R–BA5R; simultaneous access to the same bank by both ports invalidates both operations.

Key Specifications

Pinout & Package

70V7339S166BCI is housed in a 256-pin Ball Grid Array (BC256) package measuring 17 mm × 17 mm × 1.4 mm with 1.0 mm ball pitch. All VDD pins require 3.3 V ±150 mV; VDDQ pins must match selected I/O voltage (2.5 V ±100 mV or 3.3 V ±150 mV) per port based on OPTL/OPTR logic level.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-ported SRAM applications.

Compared with CY7C1362BV33-166AXC and AS7C35128PFS-166BIN, the 70V7339S166BCI uniquely supports per-port I/O voltage selection, hardware-enforced bank arbitration, and production-ready JTAG testability-making it optimal for complex, mixed-voltage, safety-critical embedded systems.

Availability

70V7339S166BCI is available at Aetrix Electronics and suitable for telecom packet buffering, parallel processor interconnect, radar signal processing, and industrial motion control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V7339S166BCI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The 70V7339S product line delivers bank-switchable dual-ported SRAMs optimized for deterministic, low-latency memory sharing between asynchronous or tightly coupled processors in real-time embedded systems.

FAQ

What is the maximum operating frequency of the 70V7339S166BCI?

The 70V7339S166BCI is rated for 166 MHz operation across the industrial temperature range (−40°C to +85°C). This corresponds to a minimum clock cycle time of 6.0 ns in pipelined mode. The device achieves this speed with 3.6 ns max clock-to-data-out timing and supports full dual-port concurrency without internal arbitration delays.

Does the 70V7339S166BCI support mixed-voltage operation between its two ports?

Yes, the 70V7339S166BCI supports independent I/O voltage selection per port: OPTL and OPTR each configure their respective port for either 2.5 V (VIL) or 3.3 V (VIH) signaling levels. VDDQL and VDDQR supplies must match the selected voltage, enabling direct interfacing with heterogeneous logic families without external level shifters.

How does bank switching work in the 70V7339S166BCI?

Bank switching in the 70V7339S166BCI is controlled by six dedicated bank address pins per port (BA0L–BA5L and BA0R–BA5R), selecting one of 64 independent 8K × 18 memory banks. Simultaneous access to the same bank by both ports invalidates both operations-users must ensure BA values differ to guarantee deterministic concurrent access.

What is the purpose of the PL/FTL and PL/FTR pins on the 70V7339S166BCI?

The PL/FTL and PL/FTR pins on the 70V7339S166BCI select output timing mode per port: VIH enables pipelined operation (3.6 ns tCD2, 6 ns tCYC2), minimizing read latency; VIL enables flow-through mode (12 ns tCD1, 20 ns tCYC1), eliminating pipeline stalls for continuous data streaming. Mode selection is static during operation and must be set before clock activation.

Is JTAG boundary-scan supported on the 70V7339S166BCI?

Yes, the 70V7339S166BCI implements full IEEE 1149.1 JTAG boundary-scan functionality via dedicated TDI, TDO, TCK, TMS, and TRST pins. This enables automated PCB test, interconnect verification, and in-system debug of memory subsystems-critical for high-reliability industrial and telecom applications.