Renesas 70V7519S133BFI

Overview

70V7519S133BFI from Integrated Device Technology is a high-speed, 256K × 36 (9 Mbit) synchronous bank-switchable dual-ported SRAM with independent left/right ports, 133 MHz operation (4.2 ns access), industrial temperature range (–40°C to +85°C), and selectable 2.5 V/3.3 V I/O interface per port. It enables concurrent read/write access to disjoint 4K × 36 memory banks in telecom switching fabric and packet buffer applications.

For engineers reviewing the 70V7519S133BFI datasheet, 70V7519S133BFI pinout, 70V7519S133BFI application, or 70V7519S133BFI equivalent, key selection criteria include bank-switchable arbitration logic, pipelined/flow-through output mode selection, JTAG IEEE 1149.1 compliance, dual chip enable for depth expansion, and independent VDDQ voltage control per port.

Technical Context

The 70V7519S133BFI implements a true SRAM core-not traditional dual-port-enabling bank-switchable access across 64 independent 4K × 36 blocks. Bank selection is controlled directly via six dedicated BA0–BA5 address pins per port, with collision detection when both ports target the same bank.

It supports full synchronous operation on both ports with register-controlled inputs (address, data, control), enabling tight timing: 1.5 ns setup and 0.5 ns hold at 200 MHz. The device offers selectable pipelined (3.4 ns tCD2 @ 200 MHz) or flow-through (10 ns tCD1 @ 200 MHz) output modes, and includes counter-enable/repeat features for burst sequential addressing.

Key Specifications

Pinout & Package

70V7519S133BFI is housed in a 208-pin fine-pitch Ball Grid Array (fpBGA) package designated BF208, with 15 mm × 15 mm footprint, 0.8 mm ball pitch, and 1.4 mm height. Power and ground balls are distributed across the array for low-inductance decoupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-ported SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256B-133JCIN, the 70V7519S133BFI uniquely delivers bank-switchable arbitration, eliminating external logic for conflict-free concurrent access-reducing PCB area and timing risk in high-bandwidth buffering systems.

Availability

70V7519S133BFI is available at Aetrix Electronics and suitable for telecom packet buffering, network switching fabric, and medical imaging data acquisition requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V7519S133BFI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V7519S133BFI belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered specifically for deterministic, low-latency, concurrent memory access in packet infrastructure and real-time control systems.

FAQ

What is the maximum operating frequency of the 70V7519S133BFI at industrial temperature?

The 70V7519S133BFI is rated for 133 MHz operation across the full industrial temperature range (–40°C to +85°C). This speed grade is validated for the BF208 fpBGA package and requires VDDQ set to 3.3 V (OPTL/OPTR = VIH) for guaranteed timing compliance.

Does the 70V7519S133BFI support independent I/O voltage levels on each port?

Yes, the 70V7519S133BFI supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VIH configures the left port for 3.3 V I/O, while OPTR = VIL configures the right port for 2.5 V I/O-enabling direct interfacing with mixed-voltage SoCs without level shifters.

How does bank-switching arbitration work in the 70V7519S133BFI?

The 70V7519S133BFI uses dedicated BA0–BA5 pins on each port to select one of 64 independent 4K × 36 banks. If both ports attempt access to the same bank simultaneously, neither access is valid-data may be corrupted on writes or invalid on reads. Users must ensure BA0L–BA5L ≠ BA0R–BA5R in real-time software/firmware.

What is the purpose of the PL/FTL and PL/FTR pins on the 70V7519S133BFI?

The PL/FTL (left) and PL/FTR (right) pins configure the output timing mode: VIH selects pipelined mode (3.4 ns tCD2 @ 200 MHz, 1-cycle latency), while VIL selects flow-through mode (10 ns tCD1 @ 200 MHz, zero-cycle latency). Mode selection is static per port and must be set before operation.

Can the 70V7519S133BFI be used for depth expansion, and how is it implemented?

Yes, the 70V7519S133BFI supports depth expansion using its dual chip enables (CE0X/CE1X per port). By tying CE0A = L/CE1A = H for Device A and CE0B = L/CE1B = H for Device B while sharing address/data/control lines, two or more devices operate as a single wider or deeper memory-no additional logic required.