Renesas 70V7519S166BCI8

Overview

70V7519S166BCI8 from IDT (Integrated Device Technology) is a high-speed, synchronous, bank-switchable dual-ported SRAM with 256K × 36-bit organization (9 Mbit), industrial temperature support (−40°C to +85°C), 166 MHz operation, and selectable 3.3 V or 2.5 V I/O interface per port. It enables concurrent access to independent 4K × 36 memory banks in telecom switching fabric and packet buffer applications.

For engineers reviewing the 70V7519S166BCI8 datasheet, 70V7519S166BCI8 pinout, 70V7519S166BCI8 application, or 70V7519S166BCI8 equivalent, key selection criteria include dual-port latency tolerance, bank-switching control via BA[5:0], pipelined/flow-through output mode selection, JTAG IEEE 1149.1 compliance, and 256-pin BGA package compatibility with depth expansion using dual chip enables.

Technical Context

The 70V7519S166BCI8 implements a true SRAM core-not traditional dual-port-enabling independent left/right port access to any of 64 non-conflicting 4K × 36 banks under user-controlled bank address (BA0–BA5). Each port features fully synchronous timing with register-controlled inputs, supporting 5 ns cycle time at 200 MHz (14 Gbps aggregate bandwidth) and sub-4 ns clock-to-data-out in pipelined mode.

It supports independent voltage selection per port: core VDD = 3.3 V ±150 mV, while I/O and control logic operate at either 3.3 V (OPT = VIH) or 2.5 V (OPT = VIL), with corresponding VDDQ supply. Bank conflict detection is not hardware-resolved; simultaneous BA[5:0] matches on both ports invalidate both accesses.

Key Specifications

Pinout & Package

70V7519S166BCI8 is housed in a 256-pin BGA (package code BC256), with 17 mm × 17 mm footprint, 1.0 mm ball pitch, and 1.4 mm height. Power delivery includes multiple VDD (3.3 V core), VDDQ (port-selectable I/O), and VSS balls distributed across the array for low-noise operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-ported SRAM applications.

Compared with CY7C1362BV33-166BZI and AS7C3256A-166BIN, the 70V7519S166BCI8 uniquely delivers bank-switchable arbitration, per-port I/O voltage selection, and hardware address counters - making it the only option for scalable, low-latency, mixed-voltage packet buffering in telecom infrastructure.

Availability

70V7519S166BCI8 is available at Aetrix Electronics and suitable for telecom switching fabric, network packet buffer, and industrial PLC data exchange requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V7519S166BCI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing markets.

The 70V7519S product line was designed specifically for high-bandwidth, low-latency dual-access memory applications in telecom infrastructure, where bank-switchable architecture eliminates port contention in packet-forwarding engines.

FAQ

What is the maximum operating frequency of the 70V7519S166BCI8 and under what conditions?

The 70V7519S166BCI8 is rated for 166 MHz operation in industrial temperature range (−40°C to +85°C), with 6 ns minimum clock cycle time in pipelined mode. This speed grade requires VDDQ = 3.3 V (i.e., OPTL/OPTR = VIH) and is only available in the BC256 package - not the BF208 fpBGA variant.

Does the 70V7519S166BCI8 support independent I/O voltage selection on left and right ports?

Yes, the 70V7519S166BCI8 supports independent I/O voltage selection: OPTL sets left port I/O voltage (3.3 V or 2.5 V), and OPTR sets right port I/O voltage. When OPTX = VIH, VDDQX must be 3.3 V; when OPTX = VIL, VDDQX must be 2.5 V. Core VDD remains fixed at 3.3 V.

How does bank conflict resolution work in the 70V7519S166BCI8?

The 70V7519S166BCI8 does not resolve bank conflicts in hardware. If BA0L–BA5L match BA0R–BA5R on the same clock edge, both port accesses are invalidated - potentially corrupting write data or returning invalid read data. System design must ensure bank address independence via software or external logic.

What is the purpose of the CNTEN and REPEAT signals in the 70V7519S166BCI8?

CNTEN enables the internal address counter to auto-increment on each clock edge, supporting burst sequential access without host address updates. REPEAT latches the last valid ADS-loaded address; asserting REPEAT resets the counter to that address - useful for circular buffer or ping-pong FIFO initialization in the 70V7519S166BCI8.

Is JTAG boundary-scan supported on the 70V7519S166BCI8, and which pins are used?

Yes, the 70V7519S166BCI8 supports IEEE 1149.1 JTAG boundary-scan via dedicated pins: TDI (pin A4), TDO (pin A3), TCK (pin T2), TMS (pin P3), and TRST (pin R3). These pins are active in all operating modes and enable PCB-level interconnect testing without requiring functional access to the SRAM array.