Renesas 70V7519S166DR

Overview

70V7519S166DR from Integrated Device Technology is a high-speed 256K × 36 (9 Mbit) synchronous bank-switchable dual-ported SRAM with independent left/right ports, 166 MHz operation (3.6 ns access), industrial temperature support (–40°C to +85°C), and selectable 3.3 V or 2.5 V I/O interface per port. It enables concurrent read/write access to disjoint 4K × 36 memory banks in telecom switching fabric and packet buffer applications.

For engineers reviewing the 70V7519S166DR datasheet, 70V7519S166DR pinout, 70V7519S166DR application, or 70V7519S166DR equivalent, key selection criteria include dual-port bank-switching architecture, pipelined/flow-through output mode selection, JTAG IEEE 1149.1 compliance, 208-pin PQFP package, and differential timing margins for burst-mode data flow in high-throughput networking systems.

Technical Context

The 70V7519S166DR implements a true SRAM core with 64 independent 4K × 36 banks, enabling non-conflicting simultaneous access by left and right ports-provided bank address pins (BA0L–BA5L ≠ BA0R–BA5R) differ. Bank arbitration is user-controlled via dedicated bank address inputs, not internal arbitration logic.

It supports fully synchronous operation on both ports with register-controlled inputs (address, control, data), delivering 5 ns cycle time at 200 MHz and 3.4 ns clock-to-data-out in pipelined mode. The device integrates counter enable/repeat features, separate byte enables (BE0–BE3), and dual chip enables (CE0/CE1) for seamless depth expansion without external logic.

Key Specifications

Pinout & Package

70V7519S166DR is housed in a 208-pin Plastic Quad Flat Pack (PQFP), designated DR208. The package measures 28 mm × 28 mm × 3.5 mm with gull-wing leads and is RoHS-compliant. Power and ground pins are distributed across all four sides for low-noise supply routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-166AXC and AS7C3256B-166JCIN, the 70V7519S166DR uniquely delivers bank-switchable concurrency, per-port voltage selection, and JTAG testability-making it the only option for high-reliability, mixed-voltage, test-critical dual-port memory systems.

Availability

70V7519S166DR is available at Aetrix Electronics and suitable for telecom switching fabric, network packet buffer, and real-time signal processing applications requiring stable component supply, long-lifecycle assurance, and industrial-grade thermal performance.

Supply support for 70V7519S166DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 70V7519S166DR belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered specifically for zero-contention, high-bandwidth data buffering in telecom infrastructure, packet processing engines, and real-time embedded systems.

FAQ

What is the maximum operating frequency and access time for the 70V7519S166DR?

The 70V7519S166DR is rated for 166 MHz operation with a maximum access time of 3.6 ns in pipelined mode. This specification applies under industrial temperature conditions (–40°C to +85°C) and requires VDDQ = 3.3 V (i.e., OPTL/OPTR = VIH). At 2.5 V I/O, the maximum speed grade supported is 133 MHz.

Does the 70V7519S166DR support independent voltage operation on its two ports?

Yes, the 70V7519S166DR supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VIH configures the left port for 3.3 V operation (VDDQL = 3.3 V), while OPTR = VIL configures the right port for 2.5 V (VDDQR = 2.5 V). Core voltage (VDD) remains fixed at 3.3 V for both configurations.

How does bank-switching prevent port contention in the 70V7519S166DR?

The 70V7519S166DR avoids port contention by assigning each 4K × 36 memory block to one of 64 banks, with access controlled exclusively by BA0–BA5 address pins. If BA0L–BA5L ≠ BA0R–BA5R, both ports access disjoint banks concurrently. Identical bank selection invalidates both accesses-requiring software coordination, not hardware arbitration.

What is the function of the REPEAT pin in the 70V7519S166DR?

The REPEAT pin (REPEATL/REPEATR) resets the internal address counter to the last valid address loaded via ADS (Address Strobe Enable). This enables rapid re-access to calibration tables or lookup data without reloading the address bus-reducing control overhead in real-time signal processing loops where the 70V7519S166DR is deployed.

Is JTAG boundary-scan supported on the 70V7519S166DR, and what standard does it comply with?

Yes, the 70V7519S166DR includes full IEEE 1149.1-compliant JTAG test circuitry with TMS, TCK, TDI, TDO, and TRST pins. This enables boundary-scan testing of PCB interconnects, verification of memory subsystem signal integrity, and in-system programming support-critical for high-reliability telecom and industrial deployments of the 70V7519S166DR.