Renesas 70V7519S166DRI

Overview

70V7519S166DRI from Integrated Device Technology is a high-speed 256K × 36 (9 Mbit) synchronous bank-switchable dual-ported SRAM with independent left/right ports, 166 MHz operation (3.6 ns access), industrial temperature range (−40°C to +85°C), and selectable 3.3 V or 2.5 V I/O interface per port. It enables concurrent memory access in telecom line cards and packet buffer applications.

For engineers reviewing the 70V7519S166DRI datasheet, 70V7519S166DRI pinout, 70V7519S166DRI application, or 70V7519S166DRI equivalent, key selection criteria include dual-port timing isolation, bank-switchable architecture for conflict avoidance, pipelined/flow-through output mode selection, JTAG IEEE 1149.1 compliance, and 208-pin fpBGA package compatibility with depth expansion support.

Technical Context

The 70V7519S166DRI implements a true SRAM core with 64 independent 4K × 36 banks, enabling user-directed bank access via BA0–BA5 pins on each port. Its dual-port architecture supports simultaneous reads/writes to different banks without arbitration logic.

It features fully synchronous operation on both ports with register-controlled inputs (address, data, control), achieving 5 ns cycle time at 200 MHz and 3.4 ns clock-to-data-out in pipelined mode. The device supports automatic power-down via dual chip enables (CE0/CE1) and includes counter enable/repeat functionality for burst address generation.

Key Specifications

Pinout & Package

70V7519S166DRI is housed in a 208-pin fine-pitch Ball Grid Array (fpBGA) with 0.8 mm ball pitch and 15 mm × 15 mm footprint. Power and ground balls are distributed across the array for low-inductance supply delivery; I/O balls are arranged in dual-port symmetric groups.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-ported SRAM applications.

Compared with CY7C1362KV18-166BZI and AS7C33128PFS-166BIN, the 70V7519S166DRI uniquely combines bank-switchable architecture, per-port I/O voltage selection, pipelined/flow-through mode flexibility, and JTAG compliance in a compact 208-pin fpBGA - making it optimal for space-constrained, mixed-voltage, high-reliability dual-port memory systems.

Availability

70V7519S166DRI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle assurance, and industrial temperature performance.

Supply support for 70V7519S166DRI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V7519S166DRI belongs to IDT's high-speed synchronous dual-ported SRAM product line, engineered specifically for deterministic-latency, concurrent-access applications in networking and real-time embedded systems.

FAQ

What is the maximum operating frequency supported by the 70V7519S166DRI?

The 70V7519S166DRI is rated for 166 MHz operation across the industrial temperature range (−40°C to +85°C). This corresponds to a minimum clock cycle time of 6 ns in pipelined mode and supports up to 14 Gbps aggregate bandwidth with both ports active. It is not qualified for 200 MHz operation at industrial temperatures.

Does the 70V7519S166DRI support independent I/O voltage levels on its left and right ports?

Yes, the 70V7519S166DRI supports independent I/O voltage selection per port via the OPTL and OPTR pins. Setting OPTL to VIH (3.3 V) or VIL (0 V) configures the left port's VDDQL supply and input thresholds for 3.3 V or 2.5 V operation; OPTR performs the same function for the right port. This enables mixed-voltage system integration without external level shifters.

How does bank-switching work in the 70V7519S166DRI, and what happens if both ports access the same bank simultaneously?

The 70V7519S166DRI contains 64 independent 4K × 36 banks addressed by BA0L–BA5L and BA0R–BA5R. If both ports attempt to access the same bank concurrently, neither access is guaranteed valid: write operations may corrupt data, and read operations may return invalid output. Firmware must enforce bank allocation separation to maintain data integrity.

What are the key differences between pipelined and flow-through output modes in the 70V7519S166DRI?

In pipelined mode (PL/FTL = VIH), output data is registered, adding one clock-cycle latency but enabling tighter timing closure at high frequencies (tCD2 = 3.6 ns max at 166 MHz). In flow-through mode (PL/FTL = VIL), data appears combinatorially after clocking (tCD1 = 12 ns max), providing zero-cycle latency ideal for deterministic real-time control loops.

Is JTAG boundary-scan supported on the 70V7519S166DRI, and which standard does it comply with?

Yes, the 70V7519S166DRI includes full IEEE 1149.1-compliant JTAG boundary-scan functionality with dedicated TDI, TDO, TCK, TMS, and TRST pins. This enables in-system test, interconnect verification, and debug of memory subsystems without requiring physical probe access to high-speed data buses.