Renesas 70V7519S200BC8

Overview

70V7519S200BC8 from Integrated Device Technology is a high-speed 256K × 36 (9 Mbit) synchronous bank-switchable dual-ported SRAM with independent left/right ports, 200 MHz operation (5 ns cycle time), 3.4 ns clock-to-data-out in pipelined mode, and selectable 3.3 V or 2.5 V I/O interface per port. It is used in high-bandwidth packet buffering and real-time digital signal processing systems requiring concurrent read/write access to shared memory.

For engineers reviewing the 70V7519S200BC8 datasheet, 70V7519S200BC8 pinout, 70V7519S200BC8 application, or 70V7519S200BC8 equivalent, key selection criteria include bank-switchable arbitration logic, dual chip enables for depth expansion, JTAG IEEE 1149.1 compliance, industrial-grade temperature support at 166/133 MHz, and fine-pitch BGA packaging compatibility.

Technical Context

The 70V7519S200BC8 implements a true SRAM core organized into 64 independent 4K × 36 banks, enabling user-controlled bank addressing via BA0–BA5 pins on each port. Concurrent access to different banks is permitted; simultaneous access to the same bank by both ports results in undefined data and invalidates both operations.

It supports fully synchronous operation with pipelined or flow-through output modes, self-timed write, and register-controlled inputs achieving 1.5 ns setup / 0.5 ns hold at 200 MHz. The device integrates separate byte enables (BE0–BE3), address strobe (ADS), counter enable (CNTEN), and repeat (REPEAT) logic for burst-mode address generation across bank boundaries.

Key Specifications

Pinout & Package

70V7519S200BC8 is housed in a 256-pin Ball Grid Array (BC256) package with 17 mm × 17 mm body size, 1.0 mm ball pitch, and 1.4 mm height. Power and ground balls are distributed across the array for low-inductance supply delivery; VDD (3.3 V core) and VDDQ (3.3 V or 2.5 V I/O) are separately routed per port.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-ported SRAM applications.

Compared with CY7C1362BV33-200AXC and AS7C3256B-20JCIN, the 70V7519S200BC8 uniquely provides user-directed bank arbitration, per-port I/O voltage selection, and integrated burst address generation-enabling higher determinism in real-time embedded memory subsystems.

Availability

70V7519S200BC8 is available at Aetrix Electronics and suitable for telecom infrastructure, real-time DSP systems, network processor co-processing, and industrial motion control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 70V7519S200BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V7519S200BC8 belongs to IDT's high-speed synchronous dual-ported SRAM product line, engineered specifically for deterministic, low-latency shared-memory architectures in packet processing and real-time control systems.

FAQ

What is the maximum operating frequency of the 70V7519S200BC8 and under what conditions?

The 70V7519S200BC8 supports up to 200 MHz operation in commercial temperature range (0°C to +70°C). This speed grade requires VDDQ = 3.3 V on the active port (i.e., OPT pin set to VIH) and is only available in the BC256 package-not the BF208 fpBGA variant. Industrial temperature operation is limited to 166 MHz and 133 MHz.

How does bank-switching work in the 70V7519S200BC8 and why is it different from standard dual-port SRAM?

The 70V7519S200BC8 uses a true SRAM core divided into 64 independent 4K × 36 banks, with access controlled directly by BA0–BA5 pins on each port. Unlike traditional dual-port SRAMs that rely on internal arbitration, this architecture lets users explicitly assign banks-preventing contention only when both ports target identical BA values. This enables deterministic, software-managed memory partitioning.

Can the left and right ports of the 70V7519S200BC8 operate at different I/O voltages simultaneously?

Yes-the 70V7519S200BC8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VIH (3.3 V) and OPTR to VIL (0 V) configures the left port for 3.3 V signaling and the right port for 2.5 V signaling, with corresponding VDDQL and VDDQR supplies. This eliminates external level-shifting circuitry in mixed-voltage systems.

What is the role of the ADS, CNTEN, and REPEAT signals in the 70V7519S200BC8?

ADSL/ADSR latches the current address on the rising clock edge. CNTENL/CNTENR enables automatic address increment on subsequent clocks. REPEATL/REPEATR resets the internal counter to the last ADS-loaded address-enabling burst-mode circular buffering across bank boundaries. These signals collectively eliminate the need for external address generators in streaming applications.

Does the 70V7519S200BC8 support JTAG boundary-scan, and which pins are used?

Yes-the 70V7519S200BC8 fully complies with IEEE 1149.1 JTAG boundary-scan. Pins TDI (A4), TDO (A3), TCK (T2), TMS (P3), and TRST (R3) implement the test access port. This enables in-system verification of solder joints, interconnect integrity, and functional testing without physical probe access.