Renesas 70V7519S200BCG8

Overview

70V7519S200BCG8 from IDT (now Renesas) is a high-speed synchronous bank-switchable dual-ported SRAM with 256K × 36 (9 Mbit) capacity, organized into 64 independent 4K × 36 banks. It supports 200 MHz operation (5 ns cycle time), 3.3 V core supply, and selectable 3.3 V or 2.5 V I/O interface per port. Used in high-bandwidth packet buffering and real-time data co-processing between asymmetric subsystems.

For engineers reviewing the 70V7519S200BCG8 datasheet, 70V7519S200BCG8 pinout, 70V7519S200BCG8 application, or 70V7519S200BCG8 equivalent, key selection criteria include dual-port bank-switching arbitration, pipelined/flow-through output mode selection, JTAG IEEE 1149.1 compliance, industrial-grade timing at 166 MHz, and fpBGA-208 package compatibility with LVTTL-level signaling.

Technical Context

This device implements a true SRAM core-not traditional dual-port-enabling independent, concurrent access to separate 4K × 36 banks via dedicated left/right ports with full address, control, and I/O isolation. Bank selection is user-controlled via BA0–BA5 pins on each port, with collision detection preventing simultaneous access to the same bank.

It features register-controlled inputs (address, data, byte enables, R/W, CE, OE) enabling tight timing margins: 1.5 ns setup and 0.5 ns hold at 200 MHz. The counter-enable and repeat functions support burst-addressed sequential reads/writes across bank boundaries without external logic.

Key Specifications

Pinout & Package

70V7519S200BCG8 is housed in a 208-pin fine-pitch Ball Grid Array (fpBGA) with 15 mm × 15 mm body and 0.8 mm ball pitch. Power and ground balls are distributed across the array for low-noise operation; VDD (3.3 V core) and VDDQ (I/O supply) pins are segregated per port.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-ported SRAM applications.

Compared with CY7C1362BV33-200AXC and AS7C33256P-20JCIN, the 70V7519S200BCG8 uniquely delivers bank-switchable concurrency, per-port voltage selection, and integrated counter logic-enabling lower system latency and reduced external component count in high-performance embedded designs.

Availability

70V7519S200BCG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, real-time signal processing, and automated test equipment requiring stable component supply and long-term obsolescence management.

Supply support for 70V7519S200BCG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly IDT) is a global semiconductor leader specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V7519S200BCG8 belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for applications demanding concurrent, low-latency data access between heterogeneous processing domains.

FAQ

What is the maximum operating frequency of the 70V7519S200BCG8?

The 70V7519S200BCG8 is rated for 200 MHz operation (5 ns clock cycle time) in commercial temperature range (0°C to +70°C). This speed grade is only available with 3.3 V I/O configuration (OPTL/OPTR = VIH) and is not offered in industrial temperature range-industrial variants are limited to 166 MHz and 133 MHz.

Does the 70V7519S200BCG8 support independent I/O voltage levels on each port?

Yes, the 70V7519S200BCG8 supports independent I/O voltage selection per port: OPTL sets left-port I/O to either 3.3 V (VIH) or 2.5 V (VIL), and OPTR does the same for the right port. Corresponding VDDQL and VDDQR supplies must match the selected level-enabling direct interfacing with mixed-voltage ASICs or FPGAs.

How does bank-switching work in the 70V7519S200BCG8, and what happens during bank contention?

The 70V7519S200BCG8 uses BA0–BA5 pins on each port to select one of 64 independent 4K × 36 banks. If both ports attempt simultaneous access to the same bank, neither access is valid-data may be corrupted during writes or invalid during reads. System design must ensure BAxL ≠ BAxR to maintain data integrity.

What are the key timing advantages of the 70V7519S200BCG8 over standard dual-port SRAMs?

The 70V7519S200BCG8 provides 1.5 ns setup and 0.5 ns hold times on all registered inputs at 200 MHz, enabled by input registers on address, data, and controls. Its pipelined output mode achieves 3.4 ns clock-to-data-out-significantly faster than asynchronous dual-ports-and eliminates external latch requirements in high-speed designs.

Is JTAG boundary-scan supported on the 70V7519S200BCG8, and which pins are used?

Yes, the 70V7519S200BCG8 fully supports IEEE 1149.1 JTAG boundary-scan. Dedicated pins include TMS, TCK, TDI, TDO, and TRST-located on the fpBGA-208 package per the official pinout diagram. These enable production testing, interconnect validation, and in-system debug without requiring additional test circuitry.