Renesas 70V7599S200BC

Overview

70V7599S200BC from Integrated Device Technology is a high-speed 128K × 36 (4 Mbit) synchronous bank-switchable dual-ported SRAM with true SRAM core architecture, 200 MHz operation, 3.4 ns clock-to-data-out (pipelined), and independent 3.3 V core / selectable 3.3 V or 2.5 V I/O interface per port - used in high-bandwidth packet buffering and telecom line-card memory subsystems.

For engineers reviewing the 70V7599S200BC datasheet, 70V7599S200BC pinout, 70V7599S200BC application, or 70V7599S200BC equivalent, this page delivers verified timing parameters, bank-switching control logic, JTAG-compliant test interface details, and dual-port power-down behavior critical for burst-mode data flow and depth-expanded memory systems.

Technical Context

The 70V7599S200BC implements a bank-switchable architecture with 64 independent 2K × 36 banks, enabling concurrent non-conflicting access by left and right ports via dedicated BA0–BA5 address lines per port. Bank collision detection is user-managed - simultaneous access to the same bank invalidates both reads/writes.

It supports pipelined or flow-through output modes via PL/FTL and PL/FTR pins, with self-timed write enabling 5 ns cycle time at 200 MHz. Each port includes separate byte enables (BE0–BE3), counter enable (CNTEN), repeat (REPEAT), and address strobe (ADS) for burst address generation across bank boundaries.

Key Specifications

Pinout & Package

70V7599S200BC is housed in a 256-pin Ball Grid Array (BC256) package with 17 mm × 17 mm body, 1.0 mm ball pitch, and thermal/mechanical characteristics optimized for industrial temperature range (–40°C to +85°C). Power and ground balls are distributed across the array to minimize noise and support stable high-speed operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362AV25 and R1EX24064AS, the 70V7599S200BC uniquely combines bank-switching concurrency, per-port voltage selection, and JTAG testability - making it optimal for telecom and high-reliability embedded systems requiring both performance and debuggability.

Availability

70V7599S200BC is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature grade (-40°C to +85°C).

Supply support for 70V7599S200BC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V7599S200BC belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered specifically for deterministic, low-jitter memory subsystems in packet-processing and real-time control applications.

FAQ

What is the maximum operating frequency and corresponding access time for the 70V7599S200BC?

The 70V7599S200BC supports up to 200 MHz operation with a 3.4 ns clock-to-data-out (tCD2) in pipelined mode. This speed grade is commercially rated only and requires VDDQ = 3.3 V (i.e., OPTL/OPTR = VIH) - confirmed in datasheet section 9 and Table 11. The 200 MHz rating applies to both ports simultaneously under specified AC conditions.

How does bank-switching work in the 70V7599S200BC, and what happens during a bank conflict?

The 70V7599S200BC divides its 4 Mbit array into 64 independent 2K × 36 banks. Each port selects a bank using its own BA0–BA5 pins. If both ports assert identical bank addresses simultaneously, neither access is valid - writes may corrupt data, and reads return invalid output. This behavior is explicitly documented in Note 4 on page 5 and functional description on page 19.

Can the left and right ports of the 70V7599S200BC operate at different I/O voltages?

Yes - the 70V7599S200BC supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VIH configures the left port for 3.3 V I/O, while OPTR = VIL configures the right port for 2.5 V I/O. Corresponding VDDQL and VDDQR supplies must match (3.3 V or 2.5 V), as defined in Notes 1–2 on page 5 and Table 5a/5b.

Does the 70V7599S200BC support JTAG boundary-scan, and which pins are used?

Yes - the 70V7599S200BC fully complies with IEEE 1149.1 and includes dedicated TDI, TDO, TCK, TMS, and TRST pins (pins C4, A4, D4, D2, P5 respectively in BC256 package). These pins implement a standard 5-pin TAP controller for interconnect testing and in-system diagnostics, as stated in the Features list on page 1 and Pin Names table on page 5.

What is the purpose of the CNTEN and REPEAT signals in the 70V7599S200BC?

CNTEN enables automatic address increment on each clock rising edge, while REPEAT resets the internal counter to the last valid address loaded via ADS. Together they support burst-mode sequential access across bank boundaries - e.g., advancing from Bank 0, address FFFh to Bank 1, address 0h. This behavior is detailed in Truth Table II (page 6) and functional description on page 19.