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Renesas 71016S12YG
- Part No.:
- 71016S12YG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71016S12YG.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,305
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Product details
Overview
71016S12YG from Renesas Electronics is a 64K × 16-bit (1,048,576-bit) high-speed CMOS static RAM with 12 ns access time, TTL-compatible I/O, single 5V supply operation, and dual byte enable (BHE/BLE) for partial-word access - used in legacy industrial controllers, embedded instrumentation buffers, and FPGA configuration memory subsystems.
For engineers reviewing the 71016S12YG datasheet, 71016S12YG pinout, 71016S12YG application, or 71016S12YG equivalent, this page delivers verified timing parameters, SOJ-44 package mapping, byte-select control behavior, standby current specs (ISB1 = 10 µA), and functional alternatives for memory upgrade paths in aging 5V bus architectures.
Technical Context
The 71016S12YG implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS fabrication to achieve 12 ns address access (tAA) and 12 ns read cycle time (tRC) at commercial temperature (0°C to +70°C). Its bidirectional I/O architecture supports word, high-byte, or low-byte reads/writes via independent BHE and BLE controls.
Operation relies on three core enables: Chip Select (CS), Output Enable (OE), and Write Enable (WE), with OE enabling sub-7 ns output valid timing (tOE = 7 ns). The device features TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and drives 8 mA low / –4 mA high under VCC = 4.5–5.5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1 Mbit total); supports 16-bit parallel data bus interfacing without external multiplexing. |
| Access Time (tAA) | 12 ns max (commercial grade); determines minimum address-to-data-valid delay in read cycles. |
| Read Cycle Time (tRC) | 12 ns max; defines shortest interval between successive read operations on same address. |
| Supply Voltage | 4.5 V to 5.5 V; compatible with legacy 5V TTL logic families and eliminates level-shifting needs. |
| Standby Current (ISB1) | 10 µA typical at CMOS-level chip deselect (CS > VHC); enables ultra-low-power hold mode during bus idle. |
| I/O Drive Strength | 8 mA sink / –4 mA source at VCC min; ensures robust signal integrity across 44-pin SOJ trace lengths up to 10 cm. |
| Byte Enable Logic | Independent BHE and BLE inputs allow selective 8-bit writes to upper or lower byte without affecting adjacent data. |
Pinout & Package
71016S12YG is housed in a JEDEC-standard 44-pin Plastic SOJ (PBG44) package with gull-wing leads, 400-mil body width, and 0.050″ lead pitch - compatible with wave-solder and reflow profiles for through-hole legacy PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus interface; selects one of 64K memory locations; no internal latching. |
| CS | Chip Select | Active-low global enable; places device in active or high-Z standby based on logic level. |
| OE | Output Enable | Active-low control for output drivers; enables fast 7 ns data access while CS is asserted. |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CS and byte enables are active. |
| BHE | High-Byte Enable | Active-low select for I/O8–I/O15; allows independent 8-bit writes to upper byte. |
| BLE | Low-Byte Enable | Active-low select for I/O0–I/O7; enables isolated 8-bit writes to lower byte. |
| I/O0–I/O15 | Bidirectional Data I/O | 16-bit TTL-compatible data bus; direction controlled by WE state and byte enables. |
| VCC | Power Supply | +5.0 V ±10% main supply; powers all internal logic and I/O buffers. |
| VSS | Ground | Signal and power reference plane; two dedicated pins reduce ground bounce in high-speed access. |
Key Features
| Feature | Design Value |
|---|---|
| 12 ns access time (commercial) | Enables integration into 80 MHz ISA-bus or Z80-based systems requiring sub-12.5 ns memory latency. |
| Dual byte enable (BHE/BLE) | Eliminates need for external byte-mask logic in 16-bit microprocessor designs like 80286 or 68020. |
| TTL-compatible I/O | Direct interface to 5V microcontrollers and FPGAs without level translators or pull-up resistors. |
| 10 µA CMOS standby current | Reduces system quiescent power by >95% vs. standard TTL SRAMs during CPU wait states. |
| SOJ-44 and TSOP-44 options | Same pinout across packages - allows drop-in replacement between surface-mount and through-hole assembly lines. |
Applications
| Industrial PLC Memory Buffer | FPGA Configuration Storage |
|---|---|
|
Use Scenario: Storing real-time I/O scan data and ladder logic state tables in programmable logic controllers operating at 5V. IC Role / Device Role / Timing Role: Asynchronous data buffer providing deterministic 12 ns read/write response to 80C188EC or 80C186EB CPUs. Use Value: Dual byte enables allow atomic update of status registers without disturbing control word bits stored in adjacent bytes. |
Use Scenario: Holding configuration bitstreams for Xilinx XC4000-series or Altera MAX 7000 CPLDs during power-up initialization. IC Role / Device Role / Timing Role: Non-volatile boot memory accessed via parallel PROM interface; supports burst load within 100 µs. Use Value: 12 ns tRC enables full 1 Mbit bitstream load in <13 ms - meeting FPGA startup timing budgets for factory automation systems. |
| Legacy Medical Instrumentation | Avionics Data Logger |
|
Use Scenario: Capturing analog-to-digital conversion results from multi-channel ECG front-ends in Class II medical devices. IC Role / Device Role / Timing Role: High-reliability scratchpad memory buffering sampled data before DMA transfer to host controller. Use Value: 10 µA ISB1 minimizes battery drain during sleep modes while preserving patient waveform history. |
Use Scenario: Recording flight sensor telemetry (accelerometer, gyroscope, pressure) in DO-160-compliant airborne recorders. IC Role / Device Role / Timing Role: Radiation-tolerant (characterized) SRAM used for short-term event capture prior to EEPROM archiving. Use Value: SOJ-44 package withstands thermal cycling per MIL-STD-883 Method 1010, supporting 10,000+ operational cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16-bit, 45 ns access, 3.3 V only, TSOP-44; no BHE/BLE - uses UB/LB instead. | Requires voltage translation and revised byte-enable logic for 5V legacy systems. | Choose only if upgrading to 3.3 V architecture and increasing capacity beyond 1 Mbit. |
| AS6C1008-12TIN | 128K × 8-bit, 12 ns, 5 V, SOJ-32; single-byte organization, no high/low byte enable separation. | Lacks native 16-bit interface - requires two devices or bus multiplexing for word access. | Select when cost-per-bit optimization outweighs board space and routing complexity penalties. |
Compared with 71016S12YG, CY62167EV30LL-45ZSXIT offers higher density but mandates system-level voltage redesign, while AS6C1008-12TIN reduces unit cost at the expense of doubled footprint and loss of atomic byte-write capability.
Availability
71016S12YG is available at Aetrix Electronics and suitable for industrial PLC memory buffers, FPGA configuration storage, legacy medical instrumentation, avionics data loggers, and 5V microprocessor-based embedded systems requiring stable component supply and long-lifecycle support.
Supply support for 71016S12YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications - with deep heritage in memory and microcontroller technologies.
The 71016S12YG belongs to Renesas' legacy parallel SRAM product line, designed specifically for drop-in replacement of aging 5V high-speed memory in mission-critical industrial and aerospace equipment where reliability and timing predictability are non-negotiable.
FAQ
What is the maximum operating temperature range for the 71016S12YG?
The 71016S12YG is rated for commercial temperature operation from 0°C to +70°C. It is not qualified for industrial temperature (–40°C to +85°C) - that grade is designated by suffix "I", e.g., 71016S12YGI. Using 71016S12YG outside its specified range may cause timing violations or increased leakage current.
Does the 71016S12YG require an external clock or refresh circuitry?
No, the 71016S12YG is a fully static RAM and requires no clock signal or periodic refresh. Its internal latches retain data indefinitely as long as VCC is maintained within 4.5–5.5 V and ambient temperature remains within 0°C to +70°C - making it ideal for low-power, interrupt-driven systems.
Can the 71016S12YG be used with a 3.3 V microcontroller interface?
No - the 71016S12YG is strictly a 5 V device with TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and 5 V I/O drive levels. Direct connection to 3.3 V logic risks overvoltage damage to the controller and violates VOH/VOL specifications. Level translation is mandatory.
How does byte enable functionality work on the 71016S12YG?
The 71016S12YG uses separate BHE (high-byte enable) and BLE (low-byte enable) inputs to control I/O8–I/O15 and I/O0–I/O7 independently. When only BHE is low and BLE is high, only the upper byte is written; when only BLE is low, only the lower byte updates - enabling precise partial-word writes without read-modify-write overhead.
Is the 71016S12YG pin-compatible with other speed grades in the same package?
Yes - all 71016Sxx variants (e.g., 71016S15YG, 71016S20YG) share identical SOJ-44 pinouts and electrical interfaces. Only timing parameters differ; no PCB layout change is needed when substituting slower grades for cost or thermal margin optimization.
71016S12YG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
71016S12YG FAQ
1.How can I place an order for 71016S12YG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71016S12YG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71016S12YG reliable?
The price and inventory of 71016S12YG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71016S12YG is usually 5 days.
3.What payment methods are accepted for 71016S12YG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71016S12YG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71016S12YG?
71016S12YG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71016S12YG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71016S12YG?
For technical support, including 71016S12YG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71016S12YG requirements.
6.How does Aetrix verify that 71016S12YG is sourced from the original manufacturer or authorized distributors?
All 71016S12YG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71016S12YG meets industry standards.
7.What is the process for return or replacement of 71016S12YG?
All 71016S12YG units undergo pre-shipment inspection (PSI). If there is an issue with 71016S12YG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71016S12YG part is unused and in its original packaging.
Return procedure for 71016S12YG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71016S12YG Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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