Renesas 71016S12YG8

Overview

71016S12YG8 from Renesas Electronics is a 64K × 16-bit (1,048,576-bit) high-speed CMOS static RAM with 12 ns read cycle time, TTL-compatible I/O, and dual byte enable (BHE/BLE) for selective 8-bit access. It operates from a single 5.0 V ±10% supply, supports commercial temperature range (0°C to +70°C), and is packaged in a 44-pin plastic SOJ (PBG44).

For engineers reviewing the 71016S12YG8 datasheet, 71016S12YG8 pinout, 71016S12YG8 application, or 71016S12YG8 equivalent, this device serves as a drop-in memory solution for legacy 16-bit microprocessor bus interfaces requiring fast asynchronous access, low standby current (10 mA at CMOS-level chip deselect), and byte-selectable data transfers in industrial control and communications hardware.

Technical Context

The 71016S12YG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing. Its address access time (tAA) and read cycle time (tRC) are both guaranteed at ≤12 ns under commercial conditions, with output enable propagation delay (tOE) of ≤7 ns.

It features independent high- and low-byte enables (BHE/BLE), bidirectional TTL-compatible I/Os (I/O₀–I/O₁₅), and three control inputs (CS, WE, OE) supporting multiple read/write configurations-including word, high-byte, low-byte, and disabled-output modes-as defined in its truth table.

Key Specifications

Pinout & Package

71016S12YG8 is housed in a JEDEC-standard 44-pin Plastic SOJ (PBG44) package with gull-wing leads, 400-mil body width, and lead pitch of 0.05 inches (1.27 mm). Pin 1 is marked by a notch or dot; orientation follows top-view layout per datasheet drawing 3210 drw 02.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with CY62167EV30LL-45ZSXI and AS6C1008-55TIN, the 71016S12YG8 delivers superior timing performance (12 ns vs. 45/55 ns) and native 16-bit byte-select capability-making it uniquely suited for legacy 5 V MPU systems demanding zero-wait-state operation and minimal board redesign.

Availability

71016S12YG8 is available at Aetrix Electronics and suitable for industrial PLC memory expansion, legacy test equipment buffer, communications protocol stack cache, and embedded printer controller RAM requiring stable component supply and long-term obsolescence management.

Supply support for 71016S12YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The 71016S12YG8 belongs to Renesas' legacy high-speed parallel SRAM product line, designed specifically for backward-compatible memory upgrades in 5 V microprocessor-based systems where timing determinism and pin-level compatibility are critical.

FAQ

What is the maximum operating frequency supported by the 71016S12YG8?

The 71016S12YG8 does not operate on a clock signal-it is an asynchronous SRAM. Its performance is defined by timing parameters: tRC = 12 ns sets the minimum interval between consecutive read cycles, corresponding to an effective maximum sustained access rate of approximately 83 MHz. This makes the 71016S12YG8 suitable for high-speed 16-bit bus interfaces in systems like 80286 or 68020-based designs where deterministic access latency matters more than clocked throughput.

Does the 71016S12YG8 require external refresh circuitry?

No, the 71016S12YG8 is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its internal latches retain data indefinitely as long as power (VCC) and ground (VSS) are maintained within specification and CS remains asserted during active use. This eliminates complexity in system timing design and improves reliability in mission-critical applications such as industrial control and test instrumentation.

Can the 71016S12YG8 be used with a 3.3 V microcontroller interface?

The 71016S12YG8 is specified for 5.0 V ±10% operation and features TTL-compatible inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and outputs (VOH ≥ 2.4 V, VOL ≤ 0.4 V). While its inputs may accept 3.3 V logic levels, its outputs drive to ~3.5–4.5 V under load-requiring level translation (e.g., SN74LVC4245) for safe interfacing with 3.3 V-only receivers. Direct connection risks overvoltage damage to downstream 3.3 V ICs and is not recommended without verification of absolute maximum ratings.

What is the function of the BHE and BLE pins on the 71016S12YG8?

BHE (Bus High Enable) and BLE (Bus Low Enable) are independent active-low byte enable signals on the 71016S12YG8. When BHE is low and BLE is high, only I/O₈–I/O₁₅ (high byte) are active; when BLE is low and BHE is high, only I/O₀–I/O₇ (low byte) are active; when both are low, the full 16-bit word is accessed. This enables flexible 8-bit or 16-bit data transfers on shared buses-critical for interfacing with mixed-width peripherals or optimizing bandwidth in legacy architectures.

Is the 71016S12YG8 RoHS compliant and halogen-free?

Yes, the 71016S12YG8 is a "Green" device per Renesas' ordering nomenclature (suffix 'G' in package code), meaning it complies with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The '8' suffix indicates tape-and-reel packaging, consistent with automated SMT assembly requirements. Full compliance documentation-including substance declarations and test reports-is available through Renesas' official product page for 71016S12YG8.