Renesas 71016S15YG

Overview

71016S15YG from Renesas Electronics is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 15 ns access time, TTL-compatible I/O, single 5 V supply operation, and separate upper/lower byte enable for flexible data bus control in embedded memory subsystems.

For engineers reviewing the 71016S15YG datasheet, 71016S15YG pinout, 71016S15YG application, or 71016S15YG equivalent, this device supports fast asynchronous read/write cycles in industrial-grade memory interfaces where low standby current (50 mA), 44-pin SOJ packaging, and byte-selectable 16-bit data transfers are required.

Technical Context

The 71016S15YG implements fully static asynchronous circuitry-no clocks or refresh needed-and uses high-reliability CMOS technology to deliver deterministic timing across commercial temperature range (0°C to +70°C). Its dual-byte enable (BHE/BLE), chip select (CS), output enable (OE), and write enable (WE) support independent control of high- and low-byte lanes during word, half-word, or byte-level operations.

Timing is defined by strict AC parameters: tAA = 15 ns max, tRC = 15 ns max, tOE = 8 ns max, and tWHZ = 6 ns max. All inputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), and outputs drive ±4 mA/±8 mA loads while maintaining VOL ≤ 0.4 V and VOH ≥ 2.4 V under worst-case VCC = 4.5 V.

Key Specifications

Pinout & Package

71016S15YG is supplied in a JEDEC-standard 44-pin Plastic SOJ (PBG44) package with gull-wing leads, 400-mil body width, and lead finish compliant with RoHS and "Green" manufacturing requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with CY62167EV30LL-45ZSXIT and AS6C1008-55PCN, the 71016S15YG uniquely delivers 16-bit, 5 V, 15 ns performance in a 44-pin SOJ - making it the only direct fit for legacy 5 V, high-speed, byte-selectable memory expansions requiring minimal layout change.

Availability

71016S15YG is available at Aetrix Electronics and suitable for industrial PLC memory buffer, DSP data cache, and legacy microcontroller expansion requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for 71016S15YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71016S15YG belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered for deterministic, low-latency memory interfacing in 5 V embedded systems where reliability and timing precision are critical.

FAQ

What is the maximum operating frequency supported by the 71016S15YG?

The 71016S15YG does not operate on a clock; it is an asynchronous SRAM. Its maximum effective throughput is determined by its 15 ns read cycle time (tRC), corresponding to a theoretical upper limit of approximately 66.7 million cycles per second for consecutive random accesses. Real-world sustained bandwidth depends on address setup/hold timing and bus controller capabilities, but the device guarantees full functionality at this timing boundary across its commercial temperature range.

Does the 71016S15YG require external refresh circuitry?

No, the 71016S15YG is a fully static RAM and requires no refresh circuitry. Its CMOS design retains data indefinitely as long as power (VCC) is applied and CS remains asserted. This eliminates refresh overhead, simplifies system design, and ensures deterministic timing-critical for real-time applications such as industrial control and digital signal processing where the 71016S15YG is commonly deployed.

Can the 71016S15YG be used with a 3.3 V microcontroller?

The 71016S15YG is specified for 5.0 V ±10% operation and has TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), so it can accept 3.3 V logic HIGH signals. However, its outputs swing to 2.4 V min (VOH) under load, which may fall below the VIH requirement of some 3.3 V receivers. For reliable interfacing, level translation or careful validation of receiver input thresholds is required-unlike native 3.3 V SRAMs, the 71016S15YG is optimized for 5 V systems.

What is the function of the BHE and BLE pins on the 71016S15YG?

The BHE (Bus High Enable) and BLE (Bus Low Enable) pins on the 71016S15YG are active-low controls that independently gate the high byte (I/O₈–I/O₁₅) and low byte (I/O₀–I/O₇) during read and write operations. When only one is asserted, the corresponding byte lane transfers data while the other remains in high-impedance state-enabling efficient 8-bit access on a 16-bit bus. This capability is essential for mixed-width peripherals and reduces bus turnaround time in the 71016S15YG's target applications.

Is the 71016S15YG pin-compatible with other IDT or Renesas SRAMs in the 71016 family?

Yes, the 71016S15YG shares identical pinout, package (PBG44 SOJ), and functional block diagram with all speed grades (e.g., 71016S12YG, 71016S20YG) and temperature variants (e.g., 71016S15YGI) in the same package type. This allows direct substitution within the same PCB footprint when timing or temperature requirements change-provided the system design accommodates the respective access time and thermal specifications of the replacement 71016S15YG variant.