Renesas 71016S20PHGI

Overview

71016S20PHGI from Renesas Electronics is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 20 ns access time, industrial temperature range (–40°C to +85°C), single 5V supply operation, and TTL-compatible bidirectional I/O. It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory interfacing in embedded controllers and data acquisition systems.

For engineers reviewing the 71016S20PHGI datasheet, 71016S20PHGI pinout, 71016S20PHGI application, or 71016S20PHGI equivalent, key selection criteria include industrial-grade timing consistency, low standby current (45 mA at max VCC), byte-selectable write capability, and compatibility with 44-pin TSOP Type II PCB footprints.

Technical Context

The 71016S20PHGI implements fully static asynchronous architecture-no clocks or refresh required-and uses high-reliability CMOS process technology. Its dual-byte enable logic (BHE/BLE) enables independent 8-bit writes to upper or lower data bytes without affecting adjacent bytes.

Timing is defined by three distinct control paths: CS-controlled, OE-controlled, and BHE/BLE-controlled read/write cycles. All inputs (A0–A15, CS, WE, OE, BHE, BLE) are TTL-compatible with VIH ≥ 2.2 V and VIL ≤ 0.8 V, ensuring robust interfacing with legacy microcontrollers and FPGAs.

Key Specifications

Pinout & Package

71016S20PHGI is housed in a JEDEC-standard 44-pin Thin Small Outline Package (TSOP Type II), designated PHG44, with 0.8 mm lead pitch and body dimensions of 12.0 mm × 20.0 mm × 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with CY62167EV30LL-20ZSXIT and AS6C1008-20TIN, the 71016S20PHGI uniquely delivers 5V TTL compatibility, industrial-grade 20 ns timing, and lowest ISB (45 mA) among TSOP-packaged 64K×16 SRAMs-making it optimal for legacy 5V controller upgrades and thermally constrained deployments.

Availability

71016S20PHGI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics sensor hubs, and automated test equipment requiring stable component supply across extended lifecycle programs.

Supply support for 71016S20PHGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The 71016S20PHGI belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for industrial and avionics systems requiring deterministic 5V memory performance without refresh overhead.

FAQ

What is the maximum operating temperature range for the 71016S20PHGI?

The 71016S20PHGI is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC electrical parameters in the datasheet, including 20 ns access time and 45 mA standby current. The device undergoes temperature cycling and burn-in validation per Renesas industrial qualification standards, making the 71016S20PHGI suitable for deployment in uncooled control cabinets, outdoor telemetry units, and motor drive enclosures where ambient temperatures exceed commercial-grade limits.

Does the 71016S20PHGI require a clock or refresh signal to retain data?

No, the 71016S20PHGI is a fully static RAM and requires neither a clock nor periodic refresh cycles to retain stored data. Its internal circuitry uses bistable latching elements powered continuously by VCC, enabling true asynchronous operation. This eliminates timing-critical refresh management in firmware and avoids bus arbitration conflicts common with DRAM-key advantages for real-time control systems where the 71016S20PHGI is deployed as a deterministic data buffer.

Can the 71016S20PHGI be used with a 3.3 V microcontroller interface?

The 71016S20PHGI is specified for 5.0 V ±10% operation and has TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), so direct connection to a 3.3 V microcontroller's GPIO may violate VIH minimum under worst-case VCC and temperature conditions. While some 3.3 V devices meet 2.2 V VIH marginally, Renesas does not guarantee interoperability without level translation. For reliable 3.3 V system integration, use a dedicated level shifter or select a 3.3 V SRAM such as the CY62167EV30LL-20ZSXIT instead of the 71016S20PHGI.

What is the function of the BHE and BLE pins on the 71016S20PHGI?

The BHE (High-Byte Enable) and BLE (Low-Byte Enable) pins on the 71016S20PHGI provide independent 8-bit write control: BHE enables writes to I/O8–I/O15 (upper byte), while BLE enables writes to I/O0–I/O7 (lower byte). Both are active-low and can be asserted simultaneously for full 16-bit writes or individually for byte-granular updates-critical for efficient memory-mapped peripheral register access and partial data structure modification without read-modify-write overhead in systems using the 71016S20PHGI as local scratchpad memory.

Is the 71016S20PHGI pin-compatible with other speed grades in the same family?

Yes, the 71016S20PHGI shares identical pinout, package (PHG44 TSOP Type II), and signal definitions with other 71016SxxPHGI variants (e.g., 71016S15PHGI and 71016S12PHGI). All differ only in guaranteed access time (20 ns vs. 15 ns vs. 12 ns) and corresponding AC timing parameters. This allows direct substitution within the same industrial temperature grade for performance tuning or cost optimization-provided system timing margins accommodate the slower 20 ns variant when replacing a faster grade, and the 71016S20PHGI remains within its specified 20 ns tAA limit under actual board-level conditions.