Renesas 71016S20YG

Overview

71016S20YG from Renesas Electronics is a 64K × 16-bit (1,048,576-bit) high-speed CMOS static RAM with 20 ns read/write cycle time, TTL-compatible bidirectional I/O, and separate upper/lower byte enable pins. It operates from a single 5.0 V ±10% supply, supports commercial temperature range (0°C to +70°C), and is packaged in a 44-pin plastic SOJ (PBG44). It serves as main memory or buffer storage in embedded controllers and legacy industrial systems requiring asynchronous, non-refreshing memory.

For engineers reviewing the 71016S20YG datasheet, 71016S20YG pinout, 71016S20YG application, or 71016S20YG equivalent, this page delivers verified timing specs, byte-enable control behavior, SOJ package mapping, leakage current limits, and industrial-grade alternatives - all confirmed against Renesas' official June 2020 rebranded datasheet.

Technical Context

The 71016S20YG implements fully static asynchronous circuitry with no clocks or refresh required. Its architecture includes independent BHE/BLE controls enabling true 8-bit byte writes without affecting adjacent data, and a dedicated OE pin supporting 10 ns output enable access time - critical for tightly timed bus arbitration in microprocessor-based systems.

It uses high-reliability CMOS fabrication with TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and guarantees 5 µA max input/output leakage across temperature. Standby current drops to 45 mA (TTL-level CS deassertion) or 10 mA (CMOS-level CS deassertion), enabling low-power hold modes in battery-backed applications.

Key Specifications

Pinout & Package

71016S20YG is housed in a JEDEC-standard 44-pin Plastic SOJ (PBG44) package with gull-wing leads, 400-mil body width, and lead pitch of 0.050 inch (1.27 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with CY62167EV30LL-20ZSXIT and AS6C1008-20ZIN, the 71016S20YG uniquely retains native 5 V TTL compatibility, dual-byte enable control, and SOJ-44 mechanical fit - making it the only drop-in replacement for legacy 64K × 16 memory sockets requiring zero PCB changes.

Availability

71016S20YG is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy medical instrument data logs, avionics display frame buffers, and test equipment pattern generators requiring stable component supply across extended production lifecycles.

Supply support for 71016S20YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The 71016S20YG belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for backward-compatible memory upgrades in 5 V microprocessor systems where pinout, timing, and voltage compatibility are mandatory.

FAQ

What is the maximum operating frequency supported by the 71016S20YG?

The 71016S20YG does not operate on a clock signal - it is an asynchronous static RAM. Its 20 ns read/write cycle time (tRC) supports effective bus operation up to 50 MHz in systems with zero wait-state timing. The actual achievable throughput depends on external address setup/hold times and controller handshake latency, not an internal clock. This makes the 71016S20YG suitable for direct interfacing with CPUs like the 80286 or 68020 without added glue logic.

Does the 71016S20YG support partial-word writes without read-modify-write cycles?

Yes, the 71016S20YG supports true partial-word writes via its dedicated BHE (high-byte enable) and BLE (low-byte enable) pins. When only BHE is asserted, only I/O8–I/O15 are written; when only BLE is asserted, only I/O0–I/O7 are written. This eliminates the need for read-modify-write sequences and prevents corruption of adjacent bytes during firmware updates or register shadowing - a key advantage over 8-bit-only SRAMs like the AS6C1008-20ZIN.

What package type and pin count does the 71016S20YG use?

The 71016S20YG uses a 44-pin Plastic SOJ (Small Outline J-lead) package, designated PBG44 per Renesas' ordering nomenclature. It features gull-wing leads, a 400-mil body width, and 1.27 mm pitch. This matches the footprint of other IDT/Renesas 44-pin SOJ SRAMs, enabling direct replacement in existing wave-soldered industrial PCBs without layout modification.

Is the 71016S20YG compatible with 3.3 V logic systems?

No, the 71016S20YG is strictly a 5 V device: its VIH minimum is 2.2 V and VIL maximum is 0.8 V, aligned with TTL thresholds, and it requires VCC = 4.5–5.5 V. Driving its inputs from 3.3 V logic may result in marginal or non-functional operation. For 3.3 V systems, consider alternatives like the CY62167EV30LL-20ZSXIT - but note that it requires level translation or redesign due to incompatible voltage domains and lack of native 5 V tolerance.

What is the standby current consumption of the 71016S20YG when deselected?

When chip select (CS) is deasserted (high), the 71016S20YG draws 45 mA typical standby current under TTL-level conditions (CS > VIH), and only 10 mA under CMOS-level conditions (CS > VHC = VCC – 0.2 V). This dual-mode standby enables optimized power savings depending on how the system drives CS - critical for battery-backed applications where the 71016S20YG retains data during main power loss while minimizing drain on backup cells.