Renesas 71016S20YG8

Overview

71016S20YG8 from Renesas Electronics is a 64K × 16-bit (1,048,576-bit), high-speed CMOS static RAM with 20 ns read/write cycle time, TTL-compatible I/O, single 5.0 V ±10% supply operation, and dual byte enable (BHE/BLE) for partial-word access - used in legacy industrial control memory buffers and embedded system data storage.

For engineers reviewing the 71016S20YG8 datasheet, 71016S20YG8 pinout, 71016S20YG8 application, or 71016S20YG8 equivalent, key selection considerations include its 44-pin SOJ package, 20 ns commercial-grade timing (0°C to +70°C), bidirectional TTL-level I/O, low-power standby modes (ISB1 = 10 µA), and byte-selectable 16-bit memory interface.

Technical Context

The 71016S20YG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology for stable operation across temperature extremes. Its architecture supports three independent write-enable configurations: chip-select (CS)-controlled, write-enable (WE)-controlled, and byte-enable (BHE/BLE)-controlled timing, enabling flexible bus interfacing.

It features separate high- and low-byte enables (BHE, BLE), output enable (OE) with 10 ns access, and chip select (CS) with 20 ns access-allowing selective activation of memory regions without external logic. All inputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), and outputs drive ±4 mA/±8 mA loads while maintaining VOH ≥ 2.4 V and VOL ≤ 0.4 V at VCC = 4.5 V.

Key Specifications

Pinout & Package

71016S20YG8 is housed in a 44-pin Plastic SOJ (PBG44) package with gull-wing leads, 0.050″ lead pitch, and JEDEC MO-050 compliance. Pin 1 marked by notch or dot; top-view orientation per datasheet drawing PBG44.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with CY62167EV30LL-45ZSXIT and AS6C1008-20TIN, the 71016S20YG8 uniquely delivers 64K × 16-bit density, 20 ns timing, 5 V TTL compatibility, and byte-enable control in a drop-in SOJ-44 footprint-making it irreplaceable for maintaining legacy 16-bit industrial designs without layout revision.

Availability

71016S20YG8 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, avionics data loggers, legacy embedded controller caches, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for 71016S20YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71016S20YG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for reliability-critical, long-lifecycle industrial and avionics applications where deterministic timing and 5 V compatibility remain essential.

FAQ

What is the operating temperature range for the 71016S20YG8?

The 71016S20YG8 is rated for commercial temperature operation from 0°C to +70°C. It is not qualified for industrial (-40°C to +85°C) use-only variants ending in "YGI" or "PHGI" carry that grade. This specification ensures stability in climate-controlled factory automation cabinets and office-based test equipment where ambient extremes are avoided.

Does the 71016S20YG8 require a refresh circuit or clock signal?

No, the 71016S20YG8 uses fully static CMOS memory cells and requires no refresh cycles or clock input. Its asynchronous design means data retention is guaranteed as long as VCC remains within 4.5–5.5 V and temperature stays within spec-making it ideal for simple, low-complexity embedded systems without dedicated memory controllers.

Can the 71016S20YG8 be used with modern 3.3 V microcontrollers?

The 71016S20YG8 is strictly a 5 V device with TTL-compatible thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and cannot be directly interfaced to 3.3 V logic without level translation. Driving its inputs from 3.3 V may violate VIH min, and its 5 V outputs exceed 3.3 V I/O absolute maximum ratings-so external translators like TXB0108 are mandatory for mixed-voltage systems.

What does the "YG8" suffix indicate in 71016S20YG8?

The "YG8" suffix identifies the 71016S20YG8 as a 44-pin Plastic SOJ (PBG44) package supplied in tape-and-reel format ("8"), with commercial temperature grade ("Y") and standard power process ("G"). This matches Renesas' ordering convention in the datasheet's Orderable Part Information table and confirms mechanical and packaging compatibility with legacy SOJ sockets.

How does byte enable (BHE/BLE) function during a write cycle on the 71016S20YG8?

On the 71016S20YG8, asserting BHE low while holding BLE high performs a high-byte (I/O8–I/O15) write only; asserting BLE low with BHE high writes only the low byte (I/O0–I/O7); both low enables full 16-bit word writes. This avoids read-modify-write sequences and preserves untargeted bytes-critical for real-time control register updates where atomicity matters.