Renesas 71016S20YGI8

Overview

71016S20YGI8 from Renesas Electronics is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 20 ns access time, TTL-compatible I/O, single 5 V supply operation, and industrial temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory interfacing in embedded controllers and data acquisition systems.

For engineers reviewing the 71016S20YGI8 datasheet, 71016S20YGI8 pinout, 71016S20YGI8 application, or 71016S20YGI8 equivalent, key selection criteria include its 20 ns read cycle time, industrial-grade reliability, 44-pin SOJ (PBG44) package, and support for word/byte-level write control - critical for real-time buffering and legacy bus architectures.

Technical Context

The 71016S20YGI8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology for stable operation across industrial thermal conditions. Its architecture includes independent high- and low-byte enable paths, bidirectional TTL-compatible I/O buffers, and three-level chip select logic (CS, OE, WE) enabling precise timing control during read/write cycles.

Timing behavior is defined by multiple overlapping control signals: CS governs device selection, OE controls output driver activation, and BHE/BLE allow selective 8-bit writes without disturbing adjacent bytes. The device supports three distinct write timing modes (WE-, CS-, and byte-enable-controlled), each with validated setup/hold and pulse-width requirements per AC Electrical Characteristics table.

Key Specifications

Pinout & Package

71016S20YGI8 is housed in a 44-pin Plastic SOJ (PBG44) package with gull-wing leads, compliant with JEDEC MO-050AC. Pin layout supports standard memory bus routing with dedicated address, data, and control terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with CY62167EV30LL-45ZSXI and AS6C1008-55TIN, the 71016S20YGI8 uniquely delivers 5 V compatibility, 20 ns speed, and native 16-bit organization in a drop-in SOJ package - making it the sole viable choice for maintaining performance and footprint in industrial 5 V bus systems.

Availability

71016S20YGI8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy bus-based instrumentation, motor control feedback storage, and medical diagnostic signal capture requiring stable component supply across extended product lifecycles.

Supply support for 71016S20YGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71016S20YGI8 belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for industrial and embedded systems requiring reliable, pin-compatible 5 V memory with deterministic timing and long-term availability.

FAQ

What is the operating temperature range for the 71016S20YGI8?

The 71016S20YGI8 is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all DC and AC electrical parameters, including access time, cycle time, and standby current, making it suitable for deployment in harsh environments such as factory floors, transportation systems, and outdoor equipment where ambient temperatures fluctuate widely. The 71016S20YGI8 maintains full functionality without derating within this range.

Does the 71016S20YGI8 support byte-level writes?

Yes, the 71016S20YGI8 supports true byte-level writes via dedicated BHE (high-byte enable) and BLE (low-byte enable) pins. When only BLE is asserted, I/O0–I/O7 are written while I/O8–I/O15 remain unchanged; similarly, asserting only BHE updates the upper byte. This capability eliminates the need for read-modify-write sequences and reduces bus traffic - a key advantage in real-time control applications where the 71016S20YGI8 is commonly deployed.

What package type does the 71016S20YGI8 use?

The 71016S20YGI8 uses a 44-pin Plastic SOJ (PBG44) package with gull-wing leads, conforming to JEDEC MO-050AC standards. This package is compatible with both through-hole and surface-mount assembly processes and matches the footprint of earlier IDT and industry-standard 64K × 16 SRAMs. The "Y" in the part number explicitly denotes SOJ packaging, while "G" indicates green (lead-free) construction per RoHS requirements.

Is the 71016S20YGI8 compatible with 5 V TTL logic levels?

Yes, the 71016S20YGI8 features fully TTL-compatible inputs and outputs: input thresholds meet VIH ≥ 2.2 V and VIL ≤ 0.8 V, and outputs drive VOH ≥ 2.4 V at –4 mA and VOL ≤ 0.4 V at 8 mA. This ensures seamless integration with legacy 5 V microcontrollers, FPGAs, and bus transceivers without level shifters - a defining characteristic of the 71016S20YGI8 in industrial retrofits and long-lifecycle designs.

What is the maximum current draw of the 71016S20YGI8 during active operation?

The 71016S20YGI8 draws up to 170 mA of dynamic supply current (ICC) when operating at its maximum rated frequency under industrial temperature conditions and VCC = 5.5 V. This value reflects worst-case continuous read cycling and is specified in the AC Electrical Characteristics table. Standby current drops to just 10 µA (ISB1) when CS is held high at CMOS logic levels - a critical efficiency factor for intermittently active systems using the 71016S20YGI8 as a buffer or scratchpad.