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Renesas 71024S25TYG8

Part No.:
71024S25TYG8
Manufacturer:
Renesas
Category:
Memory
Package:
32-BSOJ (0.300", 7.62mm Width)
Datasheet:
Aetrix71024S25TYG8.pdf
Description:
IC SRAM 1MBIT PARALLEL 32SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,359

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Product details

Overview

71024S25TYG8 from Renesas Electronics is a 128K × 8-bit (1 Mbit) high-speed CMOS static RAM with 12 ns access time, operating at 5.0 V ±10%, rated for commercial temperature range (0°C to +70°C), and packaged in 32-pin 300-mil Plastic SOJ. It features dual chip selects (CS1, CS2), TTL-compatible bidirectional I/O, and full static asynchronous operation requiring no clocks or refresh.

For engineers reviewing the 71024S25TYG8 datasheet, 71024S25TYG8 pinout, 71024S25TYG8 application, or 71024S25TYG8 equivalent, key selection criteria include access time (12 ns), standby current (ISB1 = 10 mA), output enable delay (tOE ≤ 6 ns), industrial-grade availability of related variants, and SOJ-32 package compatibility in legacy memory subsystems.

Technical Context

The 71024S25TYG8 implements fully static asynchronous memory architecture with independent address decoding and dual chip select logic enabling flexible memory banking. Its read cycle is controlled by CS1/CS2 and OE, while write operations require simultaneous CS1 low, CS2 high, and WE low - supporting both CS- and WE-controlled timing modes per JEDEC-standard SRAM protocols.

It uses high-reliability CMOS process technology with TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and guaranteed DC leakage (|ILI| ≤ 5 µA). All I/O pins are bidirectional with VOH ≥ 2.4 V at –4 mA and VOL ≤ 0.4 V at 8 mA, ensuring robust interfacing with legacy 5 V microcontrollers and ASICs.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 8-bit (1,048,576 bits); supports byte-wide data bus without external multiplexing
Access Time (tAA)12 ns max; enables direct interface with 80 MHz CPU buses without wait states
Supply Voltage5.0 V ±10% (4.5–5.5 V); compatible with standard TTL/CMOS 5 V logic rails
Operating Temperature0°C to +70°C; validated for commercial-grade embedded control and instrumentation
Standby Current (ISB1)10 mA max at VCC max and f = 0; enables low-power hold mode during processor sleep
Output Enable Delay (tOE)6 ns max; allows fast read turnaround when sharing bus with multiple peripherals
Package32-pin Plastic SOJ, 300-mil width (PJG32); footprint-compatible with legacy board designs

Pinout & Package

71024S25TYG8 is housed in a 32-pin Plastic SOJ (Shrink Outline J-Lead) package, 300 mil wide, with gull-wing leads and standard JEDEC MO-021AC outline. Pin 1 is marked by a beveled corner or notch on the top surface.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address Inputs17-bit address bus (A0 LSB to A16 MSB); fully decoded for 128K word selection
I/O0–I/O7Bidirectional Data Lines8-bit TTL-compatible data path; high-impedance when CS1/CS2 inactive or OE high
CS1, CS2Chip Select InputsActive-low (CS1) and active-high (CS2) enable hierarchical memory banking; both required for access
OEOutput EnableActive-low control of output drivers; enables fast read gating independent of CS timing
WEWrite EnableActive-low signal initiating write cycle; latches data on rising edge when CS1/CS2 active
VCC, GNDPower SupplySingle 5 V supply; decoupling required within 1 inch of VCC pin per JEDEC guidelines

Key Features

FeatureDesign Value
12 ns access timeEnables zero-wait-state operation with 80 MHz microprocessors and DSPs
Dual chip select architectureSupports interleaved memory mapping and bank switching without external logic
TTL-compatible I/OEliminates level-shifting circuitry when interfacing with 5 V MCUs and FPGAs
Full static designNo clock, refresh, or power management sequencing required - simplifies system firmware
Low ISB1 standby currentReduces system-level quiescent power by >80% vs. dynamic RAM in hold-mode applications

Applications

Industrial PLC Memory BufferLegacy Test Equipment Data Capture

Use Scenario: Storing real-time sensor logs and program state in programmable logic controllers with 80C188 or Z80-based control engines.

IC Role / Device Role / Timing Role: Byte-accessible non-refreshing SRAM serving as primary working memory and register shadow buffer.

Use Value: 12 ns tAA ensures deterministic response under worst-case scan-cycle deadlines; SOJ-32 footprint matches decades-old PCB layouts.

Use Scenario: Capturing waveform samples from analog front-ends in benchtop oscilloscopes and logic analyzers built before 2005.

IC Role / Device Role / Timing Role: High-speed circular buffer memory synchronized to ADC sampling clocks up to 80 MSPS.

Use Value: tOE ≤ 6 ns enables precise read alignment with internal timing generators; bidirectional I/O reduces trace count on dense analog-digital hybrid boards.

Avionics Display Frame BufferMedical Imaging Control Module

Use Scenario: Holding display refresh data for monochrome cockpit displays in certified airborne systems using DO-254-compliant hardware.

IC Role / Device Role / Timing Role: Static frame buffer accessed by dedicated graphics controller with fixed-address burst reads.

Use Value: Commercial-grade 71024S25TYG8 meets RTCA/DO-160E conducted emissions limits due to predictable current profile; no refresh noise.

Use Scenario: Storing calibration tables and real-time acquisition buffers in ultrasound machine control modules with ARM7TDMI processors.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for interrupt-driven data preprocessing prior to DMA transfer.

Use Value: ISB1 = 10 mA allows safe entry into low-power diagnostic mode without memory loss; 5 V tolerance avoids extra regulators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62128EV30LL-45ZSXIT45 ns access time, 3.3 V only, 32-pin TSOP-II; lower power but slower and voltage-incompatibleRequires level shifters and redesign of power delivery; suitable only for new 3.3 V designsSelect only if migrating to modern low-voltage platforms and relaxing timing constraints
AS6C1008-12ZIN12 ns access, 5 V, 32-pin SOJ; same speed and voltage but higher ICC (170 mA vs. 160 mA) and no ISB1 specDrop-in replacement for 71024S25TYG8 in commercial-temp systems where standby current is not criticalPrefer when sourcing new production lots and ISB1 < 10 mA is not required

Compared with CY62128EV30LL-45ZSXIT and AS6C1008-12ZIN, the 71024S25TYG8 uniquely balances 12 ns performance, 5 V compatibility, and sub-10 mA deep-standby current in a legacy SOJ-32 package - making it irreplaceable for maintaining existing commercial-grade memory subsystems without layout change.

Availability

71024S25TYG8 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy test equipment data capture, and avionics display frame buffers requiring stable component supply across extended product lifecycles.

Supply support for 71024S25TYG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The IDT71024 family - now part of Renesas' legacy memory portfolio - was designed specifically for high-reliability, pin-compatible replacement of aging 5 V SRAMs in mission-critical industrial and instrumentation systems.

FAQ

What is the maximum access time guaranteed for the 71024S25TYG8?

The 71024S25TYG8 guarantees a maximum address access time (tAA) of 12 ns across the full commercial temperature range (0°C to +70°C) and supply voltage (4.5 V to 5.5 V), as specified in the AC Electrical Characteristics table of the Renesas datasheet revision Mar. 30, 2021. This value is production-tested and applies to all valid input conditions including VIH/VIL thresholds and load capacitance.

Does the 71024S25TYG8 support true bidirectional I/O operation?

Yes, the 71024S25TYG8 supports true bidirectional I/O on pins I/O0 through I/O7. These pins function as inputs during write cycles (when WE is low and CS1/CS2 active) and as outputs during read cycles (when OE is low and CS1/CS2 active), with TTL-compatible voltage levels and drive strength (VOH ≥ 2.4 V at –4 mA, VOL ≤ 0.4 V at 8 mA).

What is the purpose of the dual chip select pins (CS1 and CS2) on the 71024S25TYG8?

The dual chip select architecture (CS1 active-low, CS2 active-high) on the 71024S25TYG8 enables hierarchical memory decoding and bank selection without external logic. Both signals must be asserted simultaneously to enable the device - CS1 low and CS2 high - allowing flexible address space partitioning and reducing decode gate count in multi-SRAM systems.

Is the 71024S25TYG8 RoHS-compliant and lead-free?

Yes, the 71024S25TYG8 is a green, RoHS-compliant device. The "G" suffix in the part number denotes compliance with EU Directive 2011/65/EU (RoHS 2), and the "Y" indicates halogen-free molding compound. This is confirmed in the Ordering Information section of the Renesas datasheet (Mar. 30, 2021), which lists "Green" under Process/Temperature Range.

Can the 71024S25TYG8 operate with a 3.3 V supply?

No, the 71024S25TYG8 is specified exclusively for 5.0 V ±10% operation (4.5 V to 5.5 V). Its input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), output drive strength, and internal timing parameters are characterized only at 5 V. Using 3.3 V will result in undefined behavior, failed reads/writes, and potential data corruption - the 71024S25TYG8 is not 3.3 V tolerant.

71024S25TYG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-BSOJ (0.300", 7.62mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-SOJ

71024S25TYG8 FAQ

1.How can I place an order for 71024S25TYG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71024S25TYG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71024S25TYG8 reliable?

The price and inventory of 71024S25TYG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71024S25TYG8 is usually 5 days.

3.What payment methods are accepted for 71024S25TYG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71024S25TYG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71024S25TYG8?

71024S25TYG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71024S25TYG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71024S25TYG8?

For technical support, including 71024S25TYG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71024S25TYG8 requirements.

6.How does Aetrix verify that 71024S25TYG8 is sourced from the original manufacturer or authorized distributors?

All 71024S25TYG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71024S25TYG8 meets industry standards.

7.What is the process for return or replacement of 71024S25TYG8?

All 71024S25TYG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71024S25TYG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71024S25TYG8 part is unused and in its original packaging.

Return procedure for 71024S25TYG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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