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Renesas 71124S20YG
- Part No.:
- 71124S20YG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71124S20YG.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,164
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Product details
Overview
71124S20YG from Renesas Electronics is a 128K × 8-bit (1 Mbit) high-speed CMOS static RAM with JEDEC center-power/ground pinout, 20 ns read/write cycle time, 5 V single-supply operation, and TTL-compatible bidirectional I/O-used in legacy industrial control memory buffers and embedded system boot ROM shadowing.
For engineers reviewing the 71124S20YG datasheet, 71124S20YG pinout, 71124S20YG application, or 71124S20YG equivalent, key selection criteria include access time consistency (tAA = tRC = 20 ns), low standby current (ISB1 = 10 mA), SOJ-32 package compatibility, and commercial temperature range (0°C to +70°C) suitability for cost-sensitive non-automotive memory upgrades.
Technical Context
The 71124S20YG implements fully static asynchronous architecture-no clocks or refresh required-and uses high-reliability CMOS fabrication for stable operation across voltage (4.5–5.5 V) and temperature (0°C to +70°C). Its dual-control enable scheme (CS + OE) supports precise output gating independent of chip select.
JEDEC-standard center-power/ground pinout (VCC on pins 5 & 24, GND on pins 13 & 20) minimizes simultaneous switching noise, while bidirectional TTL-compatible I/Os (I/O0–I/O7) allow direct interfacing with legacy microcontrollers without level-shifting circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576-bit total); supports byte-wide data bus architectures without external multiplexing. |
| Access / Cycle Time | 20 ns (tAA, tRC, tWC); guarantees deterministic timing for 50 MHz bus interfaces in synchronous glue logic designs. |
| Supply Voltage | 4.5 V to 5.5 V; compatible with standard 5 V TTL/CMOS systems and tolerant of ±10% regulation variation. |
| Standby Current | ISB1 = 10 mA (CMOS-level deselect); enables low-power hold mode when CS > VHC, critical for battery-backed memory retention. |
| I/O Compatibility | TTL-compatible inputs and outputs; eliminates need for external bus transceivers when interfacing with 80Cxx, Z80, or 68K-family processors. |
| Operating Temperature | 0°C to +70°C (Commercial grade); validated for use in office equipment, test instrumentation, and non-harsh-environment industrial controllers. |
Pinout & Package
Package: 32-pin 400-mil Plastic SOJ (PBG32), JEDEC-standard center-power/ground layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K address space; A16 enables 256 KB addressing margin for future expansion. |
| I/O0–I/O7 | Bidirectional Data Bus | True bidirectional TTL-compatible I/Os; no separate DQ/DIN/DOUT lines-reduces PCB routing complexity. |
| CS | Chip Select | Active-low enable; must be asserted before or coincident with address setup to meet tACS timing. |
| OE | Output Enable | Active-low output gate; allows read data to appear within 8 ns (tOE) while CS remains active. |
| WE | Write Enable | Active-low write strobe; controls data latching during overlap with CS; determines write timing mode (WE- or CS-controlled). |
| VCC (pins 5, 24) | Power Supply | Dual VCC pins at center positions reduce IR drop and ground bounce in high-speed parallel bus environments. |
| GND (pins 13, 20) | Ground Reference | Dual GND pins symmetrically placed opposite VCC pins to minimize loop inductance and improve signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center-Power/Ground Pinout | Reduces simultaneous switching noise by 30–40% vs. corner-powered SOJ packages-critical for stable operation in mixed-signal systems. |
| Equal Access and Cycle Times | tAA = tRC = tWC = 20 ns ensures predictable bus arbitration and eliminates timing margin stacking in multi-cycle memory transactions. |
| Two-Level Standby Control | ISB = 40 mA (TTL-level deselect) and ISB1 = 10 mA (CMOS-level deselect) provide scalable power management based on control logic voltage thresholds. |
| Direct TTL Compatibility | VIH = 2.2 V min, VIL = 0.8 V max, and VOL = 0.4 V max allow seamless integration with legacy 5 V microprocessor buses without interface logic. |
Applications
| Industrial PLC Memory Buffer | Legacy Test Equipment Data Capture |
|---|---|
Use Scenario: Storing real-time sensor sampling data in programmable logic controller backplane modules with 8-bit ISA-style local bus. IC Role / Device Role / Timing Role: Byte-wide static RAM buffer holding intermediate scan-cycle values between CPU fetch and I/O module update cycles. Use Value: 20 ns cycle time matches 50 MHz bus clock edge alignment; low ISB1 enables energy-efficient idle state during polling intervals. | Use Scenario: Capturing waveform snapshots in benchtop oscilloscopes using microcontroller-based acquisition engines with parallel memory interfaces. IC Role / Device Role / Timing Role: High-reliability temporary storage for pre-triggered analog samples prior to DMA transfer to flash or host PC. Use Value: Center-power SOJ layout suppresses noise-induced bit errors during high-frequency analog-to-digital conversion bursts. |
| Embedded System Boot ROM Shadow | Communications Protocol Stack Cache |
Use Scenario: Mirroring boot firmware from slower EPROM into faster SRAM during system initialization in telecom line cards. IC Role / Device Role / Timing Role: Non-volatile shadow RAM enabling zero-wait-state execution of startup code on 80C188 or similar controllers. Use Value: TTL-compatible I/Os eliminate level translators; 5 V supply simplifies power domain consolidation with legacy logic rails. | Use Scenario: Caching packet header metadata and lookup tables in early-generation Ethernet switch ASIC support subsystems. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for protocol parsing engines requiring deterministic 20 ns read/write turnaround. Use Value: Equal tAA/tRC eliminates worst-case timing path asymmetry-ensuring consistent latency for both header decode and CRC calculation phases. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128ELL-20ZSXIT | Same 128K × 8 organization, 20 ns speed, but uses 32-pin TSOP-I (not SOJ); lower ICC (120 mA vs. 140 mA) and ISB (1 µA vs. 40 mA). | TSOP-I footprint requires PCB redesign; ultra-low ISB suits battery-critical portable instruments, not mains-powered industrial gear. | Select only if board redesign is feasible and µA-level standby is mandatory. |
| AS6C1008-20ZIN | 20 ns speed, 128K × 8, SOJ-32 package-but rated for industrial temp (–40°C to +85°C); higher ISB (50 mA) and no center-power pinout. | Valid for extended-temperature deployments (e.g., outdoor base stations), but increased noise susceptibility in dense backplanes. | Choose when operating temperature exceeds +70°C and SOJ-32 mechanical compatibility is required. |
Compared with CY62128ELL-20ZSXIT and AS6C1008-20ZIN, the 71124S20YG offers optimal noise immunity via JEDEC center-power SOJ layout and proven reliability in commercial-grade industrial control systems-without demanding PCB rework or over-specifying temperature range.
Availability
71124S20YG is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy test equipment data capture, and embedded system boot ROM shadowing requiring stable component supply and long-term obsolescence management.
Supply support for 71124S20YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
The 71124S20YG belongs to Renesas' legacy parallel SRAM product line, designed specifically for cost-effective, noise-resilient memory expansion in 5 V microprocessor-based systems where pinout stability and timing predictability are prioritized over ultra-low power.
FAQ
What is the maximum operating frequency supported by the 71124S20YG?
The 71124S20YG does not operate on a clock signal-it is a fully static asynchronous SRAM. Its 20 ns read/write cycle time (tRC = tWC = 20 ns) supports effective bus rates up to 50 MHz in systems with zero wait states. Timing is governed by address and control signal setup/hold requirements-not a clock input.
Does the 71124S20YG require external refresh circuitry?
No, the 71124S20YG is a static RAM and contains no capacitive storage cells. It retains data indefinitely as long as VCC is applied and CS remains inactive (high) or the device is deselected-no refresh cycles, timers, or external circuitry are needed for data retention.
Can the 71124S20YG be used in place of the 71124S15YG or 71124S12YG?
Yes, the 71124S20YG is functionally identical to the 71124S15YG and 71124S12YG except for timing: it guarantees 20 ns access/cycle times versus 15 ns or 12 ns. It is backward-compatible in designs where timing margins allow slower performance-no pinout or voltage changes are required.
What is the meaning of "YG" in the part number 71124S20YG?
In the 71124S20YG ordering code, "YG" denotes Green (lead-free) packaging and 400-mil SOJ (PBG32) package type. The "Y" specifies RoHS-compliant finish, and "G" confirms the SOJ-32 mechanical form factor-consistent across all speed grades in the 71124 family.
Is the 71124S20YG still recommended for new designs?
Renesas discontinued active promotion of the 71124S20YG for new designs after 2000, but it remains available through authorized distributors and Aetrix Electronics for legacy system repair, replacement, and long-life industrial program support-with documented electrical and thermal specifications fully maintained.
71124S20YG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
71124S20YG FAQ
1.How can I place an order for 71124S20YG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71124S20YG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71124S20YG reliable?
The price and inventory of 71124S20YG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71124S20YG is usually 5 days.
3.What payment methods are accepted for 71124S20YG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71124S20YG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71124S20YG?
71124S20YG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71124S20YG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71124S20YG?
For technical support, including 71124S20YG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71124S20YG requirements.
6.How does Aetrix verify that 71124S20YG is sourced from the original manufacturer or authorized distributors?
All 71124S20YG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71124S20YG meets industry standards.
7.What is the process for return or replacement of 71124S20YG?
All 71124S20YG units undergo pre-shipment inspection (PSI). If there is an issue with 71124S20YG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71124S20YG part is unused and in its original packaging.
Return procedure for 71124S20YG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71124S20YG Tags
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