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Renesas 71124S20YG8

Part No.:
71124S20YG8
Manufacturer:
Renesas
Category:
Memory
Package:
32-BSOJ (0.400", 10.16mm Width)
Datasheet:
Aetrix71124S20YG8.pdf
Description:
IC SRAM 1MBIT PARALLEL 32SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,789

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Product details

Overview

71124S20YG8 from Renesas Electronics is a 128K × 8-bit (1 Mbit) high-speed CMOS static RAM with JEDEC center-power/ground pinout, 20 ns read/write cycle time, TTL-compatible I/O, and single 5 V supply operation - used in embedded controllers, industrial PLCs, and legacy instrumentation requiring fast, asynchronous, non-refresh memory.

For engineers reviewing the 71124S20YG8 datasheet, 71124S20YG8 pinout, 71124S20YG8 application, or 71124S20YG8 equivalent, key selection criteria include access time (tAA ≤ 20 ns), standby current (ISB1 = 10 mA), SOJ-32 package compatibility, and commercial temperature range (0°C to +70°C) support for legacy system upgrades.

Technical Context

The 71124S20YG8 implements fully static asynchronous logic with no clocks or refresh required. Its architecture features independent Chip Select (CS) and Output Enable (OE) control, enabling precise output gating and multi-chip memory banking.

It uses center-power/ground pinout (VCC on pins 5 & 24, GND on pins 13 & 20) to minimize simultaneous switching noise. Bidirectional I/O lines (I/O0–I/O7) operate at TTL voltage levels with 6 ns OE-to-valid delay and 8 ns WE-controlled write pulse width.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 8-bit (1,048,576-bit total); supports byte-wide data bus interfacing without external demultiplexing.
Access Time (tAA) 20 ns max; determines minimum CPU wait-state insertion for direct SRAM interface at ≤50 MHz bus timing.
Read Cycle Time (tRC) 20 ns max; defines shortest interval between successive read operations without data corruption.
Supply Voltage 4.5 V to 5.5 V; compatible with standard 5 V TTL/CMOS logic rails and legacy power domains.
Standby Current (ISB1) 10 mA max at CMOS-level deselect (CS > VHC); enables low-power hold mode during processor sleep.
Operating Temperature 0°C to +70°C; qualified for commercial-grade industrial control panels and test equipment environments.
I/O Compatibility TTL-compatible inputs and outputs; eliminates level-shifter requirements when interfacing with 74LS/74F logic or microcontrollers.

Pinout & Package

71124S20YG8 is housed in a 32-pin 400-mil Plastic SOJ (PBG32) package with JEDEC-standard center-power/ground layout - VCC on pins 5 and 24, GND on pins 13 and 20 - reducing ground bounce and improving signal integrity in dense PCB layouts.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus supporting full 128K address space; A16 enables 1-Mbit addressing without external decoding.
I/O0–I/O7 Bidirectional Data Bus 8-bit TTL-compatible data path; direction controlled by CS/OE/WE states - no external transceivers needed.
CS Chip Select Active-low enable; places device in active or standby (ISB/ISB1) modes depending on logic level and timing.
OE Output Enable Active-low control of output drivers; allows shared bus operation with other peripherals without contention.
WE Write Enable Active-low write strobe; initiates write cycle when CS is low - supports both WE- and CS-controlled timing modes.

Key Features

Feature Design Value
JEDEC Center-Power/Ground Pinout Reduces simultaneous switching noise by 30–40% vs. conventional corner-VCC layouts; improves signal integrity in mixed-signal systems.
Asynchronous Static Operation No clocks, no refresh cycles required - simplifies timing design and eliminates hidden latency from DRAM refresh overhead.
Dual Standby Modes (ISB & ISB1) ISB = 40 mA (TTL-level deselect), ISB1 = 10 mA (CMOS-level deselect); enables fine-grained power management in battery-backed systems.
6 ns OE-to-Valid Delay Enables tight timing margins in high-speed microprocessor interfaces (e.g., Intel 80C188, Motorola 68EC000) without added wait states.
Single 5 V Supply Eliminates need for dual-rail (±5 V or 5 V/3.3 V) power design; reduces BOM count and layout complexity in legacy designs.

Applications

Industrial PLC Memory Buffer Legacy Test Equipment Data Capture

Use Scenario: Real-time I/O status buffering and program instruction storage in programmable logic controllers with 8-bit parallel buses.

IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing zero-wait-state access for ladder logic execution and scan-cycle data logging.

Use Value: 20 ns tAA ensures deterministic response within 10 µs scan cycles; center-power pinout suppresses noise-induced watchdog resets in electrically noisy factory floors.

Use Scenario: High-fidelity waveform capture buffer in digital oscilloscopes and logic analyzers with parallel acquisition engines.

IC Role / Device Role / Timing Role: Fast-access memory staging raw ADC samples before serial compression or display rendering.

Use Value: 20 ns tRC enables sustained 50 MS/s sampling with burst depth ≥128 KB; TTL compatibility avoids level-shifting delays in front-end FPGA interfaces.

Embedded Controller Boot ROM Extension Avionics Maintenance Terminal Cache

Use Scenario: Extending limited internal ROM capacity in 8051- and Z80-based flight control subsystems during firmware update and diagnostics.

IC Role / Device Role / Timing Role: Non-volatile boot assist memory mapped into upper code space for patch loading and runtime configuration tables.

Use Value: 5 V-only operation matches legacy avionics power architecture; ISB1 = 10 mA supports low-power maintenance mode during aircraft ground checks.

Use Scenario: Local cache for fault log retrieval and parameter reconfiguration in portable avionics diagnostic terminals.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for rapid display updates and menu navigation under constrained UI processors.

Use Value: SOJ-32 footprint ensures drop-in replacement for obsolete SRAMs in field-serviceable units; commercial temp grade meets hangar operating conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62128EV30LL-45ZSXIT 128K × 8, 45 ns speed grade, 3.3 V supply, TSOP-32 package; lower power but slower and incompatible voltage rail. Requires level translation or redesign for 5 V systems; suitable only if migrating to 3.3 V architecture with relaxed timing. Select only when upgrading to modern low-voltage platforms - not a drop-in replacement for 71124S20YG8.
AS6C1008-20ZIN 128K × 8, 20 ns speed, 5 V supply, SOJ-32 package; identical timing and pinout, but manufactured by Alliance Memory. Direct functional and mechanical replacement; validated for same commercial temperature range and JEDEC pinout. Preferred alternative when 71124S20YG8 is unavailable - requires no PCB or firmware changes.

Compared with CY62128EV30LL-45ZSXIT and AS6C1008-20ZIN, the 71124S20YG8 offers native 5 V compatibility and legacy qualification for industrial control systems, while AS6C1008-20ZIN provides identical form-fit-function replacement, and CY62128EV30LL-45ZSXIT necessitates voltage and timing redesign.

Availability

71124S20YG8 is available at Aetrix Electronics and suitable for industrial PLCs, legacy test equipment, and embedded controller upgrades requiring stable component supply, long-lifecycle support, and SOJ-32 footprint compatibility.

Supply support for 71124S20YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The 71124S20YG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for reliability-critical, asynchronous memory applications in industrial automation and instrumentation where zero-refresh operation and 5 V compatibility are mandatory.

FAQ

What is the maximum operating frequency supported by the 71124S20YG8?

The 71124S20YG8 does not use a clock; it is an asynchronous SRAM. Its performance is defined by timing parameters - notably 20 ns read cycle time (tRC) and 20 ns address access time (tAA). This supports reliable interface with microprocessors running at up to ~50 MHz bus frequencies when configured with zero wait states, assuming proper setup/hold timing compliance.

Does the 71124S20YG8 require refresh circuitry or external clocks?

No, the 71124S20YG8 is a fully static RAM and requires no refresh cycles or external clocks. Its internal circuitry maintains data indefinitely as long as VCC is applied and CS remains asserted during reads/writes. This eliminates refresh overhead and simplifies system timing design compared to DRAM solutions.

What is the meaning of "YG" and "8" in the part number 71124S20YG8?

In 71124S20YG8, "YG" denotes green (lead-free) packaging and tape-and-reel delivery, while "8" indicates the SOJ-32 package variant with standard lead finish. The full ordering code confirms commercial temperature grade (0°C to +70°C), 20 ns speed, and PBG32 package per Renesas' official ordering information table.

Can the 71124S20YG8 be used in industrial temperature applications?

No - the 71124S20YG8 is specified only for commercial temperature range (0°C to +70°C). Industrial-grade variants exist (e.g., 71124S20YGI8), but the "YG8" suffix explicitly identifies the commercial-grade version. Using it outside its rated temperature range may result in timing violations or data retention failure.

How does the center-power/ground pinout improve system performance in the 71124S20YG8?

The 71124S20YG8 places VCC on pins 5 and 24 and GND on pins 13 and 20 - symmetrically centered in the SOJ-32 package. This layout minimizes ground loop inductance and reduces simultaneous switching output (SSO) noise by balancing return current paths, directly improving signal integrity and noise margin in high-density PCBs.

71124S20YG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-BSOJ (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
20ns
Access Time:
20 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-SOJ

71124S20YG8 FAQ

1.How can I place an order for 71124S20YG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71124S20YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71124S20YG8 reliable?

The price and inventory of 71124S20YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71124S20YG8 is usually 5 days.

3.What payment methods are accepted for 71124S20YG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71124S20YG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71124S20YG8?

71124S20YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71124S20YG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71124S20YG8?

For technical support, including 71124S20YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71124S20YG8 requirements.

6.How does Aetrix verify that 71124S20YG8 is sourced from the original manufacturer or authorized distributors?

All 71124S20YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71124S20YG8 meets industry standards.

7.What is the process for return or replacement of 71124S20YG8?

All 71124S20YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71124S20YG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71124S20YG8 part is unused and in its original packaging.

Return procedure for 71124S20YG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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