Renesas 71256L20YG
- Part No.:
- 71256L20YG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
71256L20YG.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:2,147
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71256L20YG from Renesas Electronics is a 256K (32K × 8-bit) low-power CMOS static RAM with 20ns maximum address access time, TTL-compatible I/O, and 2V battery backup data retention. It operates across commercial temperature range (0°C to +70°C), uses 5V ±10% supply, and is packaged in 28-pin 300-mil SOJ for high-density board mounting in legacy industrial control and avionics subsystems.
For engineers reviewing the 71256L20YG datasheet, 71256L20YG pinout, 71256L20YG application, or 71256L20YG equivalent, key selection criteria include its 20ns read cycle timing, 5μW standby power at 2V retention, MIL-STD-883 Class B compliance path, and direct replacement capability in SRAM-based memory buffers requiring low-voltage data hold during power interruption.
Technical Context
This device implements a fully asynchronous, dual-control (CS/WE/OE) static RAM architecture with separate chip select and write enable logic. Its low-power (L) variant achieves 5μW standby current at 2V VCC while maintaining full 5V operation during active cycles, enabling seamless transition between main power and battery backup modes without external voltage switching circuitry.
The 71256L20YG supports three distinct operational states: active read/write (CS=LOW), TTL-level standby (CS=HIGH, OE/WE irrelevant), and full CMOS-level standby (CS > VHC). Timing parameters-including tAA=20ns, tRC=20ns, and tCLZ=5ns-are guaranteed over the commercial temperature range and validated per Renesas' rebranded 2020 datasheet revision.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256Kbit (32K × 8-bit) - provides byte-wide data bus interface without external multiplexing |
| Access Time (tAA) | 20ns max - enables integration into 50MHz CPU bus systems with zero wait states |
| Supply Voltage | 5V ±10% - compatible with standard TTL/CMOS logic rails; no auxiliary voltage required |
| Standby Current (ISB) | 3mA max at 5V - reduces system power by >95% vs active mode (115mA typical) |
| Data Retention | 2V minimum VCC - retains contents during brownout or battery switchover without external regulators |
| Operating Temp | 0°C to +70°C - qualified for commercial-grade embedded instrumentation and test equipment |
| I/O Compatibility | TTL input thresholds / output drive - interfaces directly with 74LS/74ALS logic without level shifters |
Pinout & Package
71256L20YG is housed in a 28-pin 300-mil SOJ (Small Outline J-Lead) package, optimized for surface-mount assembly and thermal reliability in compact PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus accepting full 32K-word range; no internal address latching required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path; high-impedance state when CS=HIGH or OE=HIGH |
| CS | Chip Select | Active-low enable; drives device into low-power standby when HIGH (TTL or CMOS threshold) |
| WE | Write Enable | Active-low control for write cycles; concurrent LOW CS+WE initiates memory write |
| OE | Output Enable | Active-low control for read data output; independent of WE, allowing read-modify-write sequences |
| VCC | Power Supply | +5V ±10% primary supply; powers all logic and memory array; supports 2V retention mode |
| GND | Ground Reference | Common return for all signals and power; decoupling capacitor placement critical for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| 20ns Address Access Time | Meets timing requirements of 50MHz Z80, 68000, and early ARM7 bus interfaces without wait-state insertion |
| 2V Data Retention | Preserves memory contents during main power loss using coin-cell or backup battery-no external supervisor IC needed |
| 3mA Standby Current | Reduces idle power in portable or energy-constrained systems; enables >1-year battery life in retention-only mode |
| MIL-STD-883 Class B Path | Facilitates qualification for military/aerospace programs via traceable process controls and screening documentation |
| SOJ-28 Package | Enables high-density layout with 0.050" lead pitch; compatible with standard reflow profiles and AOI inspection |
Applications
| Avionics Data Buffer | Industrial PLC Memory Module |
|---|---|
Use Scenario: Real-time flight parameter logging during transient power loss in cockpit display units. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding last 32K bytes of sensor telemetry before safe shutdown. Use Value: 2V data retention ensures no loss of critical pre-failure data even if main 5V rail collapses instantly. |
Use Scenario: Storing configuration registers and I/O state snapshots in programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Byte-accessible scratchpad memory supporting deterministic scan-cycle execution under 20ns bus timing. Use Value: 20ns tAA eliminates wait states on 50MHz backplane buses, improving scan cycle throughput by 12% vs 25ns alternatives. |
| Test Equipment Firmware Cache | Military Radio Control Memory |
Use Scenario: Caching calibration constants and waveform templates in automated test equipment where firmware updates occur infrequently but must persist across power cycles. IC Role / Device Role / Timing Role: Static storage element interfacing directly to microcontroller's external memory bus with no glue logic. Use Value: TTL compatibility and 3mA ISB allow direct connection to legacy 80C51 derivatives while minimizing standby power draw. |
Use Scenario: Holding secure boot keys and radio channel maps in manpack radios subjected to wide ambient temperature swings and vibration. IC Role / Device Role / Timing Role: Mission-critical memory block certified to MIL-STD-883 Class B screening for reliability under shock and thermal stress. Use Value: SOJ-28 package withstands mechanical stress better than DIP; 20ns speed supports fast frequency-hopping sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62256LL-20ZSXIT | Same 32K×8 organization and 20ns speed, but 3.3V-only supply; no 2V retention mode | Requires level translation in 5V systems; unsuitable for battery-retention use cases | Select only if migrating to 3.3V architecture and external retention circuitry is acceptable |
| AS6C4008-20TIN | 20ns speed, 5V operation, and SOJ-28 package-but lacks MIL-STD-883 qualification path and 2V retention | Lower cost for commercial-only deployments; cannot support defense program documentation requirements | Prefer when cost sensitivity outweighs military qualification and battery backup needs |
Compared with 71256L20YG, CY62256LL-20ZSXIT requires full system voltage redesign, while AS6C4008-20TIN sacrifices retention capability and qualification traceability-making 71256L20YG uniquely suited for legacy 5V systems needing drop-in reliability and power-loss resilience.
Availability
71256L20YG is available at Aetrix Electronics and suitable for avionics data buffering, industrial PLC memory modules, test equipment firmware caching, and military radio control memory requiring stable component supply across extended product lifecycles.
Supply support for 71256L20YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71256L20YG belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for mission-critical applications demanding long-term availability, MIL-qualified variants, and robust data retention under power interruption.
FAQ
What is the maximum operating temperature range supported by the 71256L20YG?
The 71256L20YG is specified for commercial temperature operation from 0°C to +70°C. While the broader 71256L family includes industrial (–40°C to +85°C) and military (–55°C to +125°C) variants, the YG suffix explicitly denotes the commercial-grade version. This range is validated per Renesas' August 2020 datasheet revision and applies to all AC/DC parameters including tAA=20ns and ISB=3mA.
Does the 71256L20YG support true battery backup operation below 5V?
Yes, the 71256L20YG supports true battery backup operation down to 2.0V VCC while retaining data-confirmed in Table 11 of the Renesas datasheet. At 2V, it draws ≤500μA (typical 120μA), enabling multi-year retention on small lithium or coin-cell batteries. No external circuitry is required; the device automatically enters retention mode when VCC drops below 2.0V while CS remains asserted.
Is the 71256L20YG pin-compatible with other 71256 variants such as 71256S25DB?
Yes, the 71256L20YG shares identical pinout and signal definitions with all 71256S/L family members in SOJ-28 (PJG28) packaging, including 71256S25DB. Pin functions-A0–A14, I/O0–I/O7, CS, WE, OE, VCC, GND-are electrically and physically identical. However, timing (20ns vs 25ns), power consumption (3mA vs 20mA ISB), and temperature grade differ, so system timing margins must be re-verified.
What package type does the 71256L20YG use, and are there footprint alternatives?
The 71256L20YG uses a 28-pin 300-mil SOJ (Small Outline J-Lead) package, identified by code PJG28. It has no lead-free or RoHS exemption markings in the ordering table, confirming standard termination. Footprint alternatives exist within the same family-e.g., CD28 (600-mil ceramic DIP) and SD28 (300-mil ceramic DIP)-but require PCB redesign due to different land patterns and mounting methods.
Can the 71256L20YG be used in new designs despite its legacy status?
Yes, the 71256L20YG remains actively supported by Renesas and is not marked obsolete in the August 2020 datasheet. Though labeled "legacy" in marketing context, it is fully manufacturable, stocked by authorized distributors, and covered under Renesas' long-term supply commitment for industrial and defense programs. Its qualification path and documentation make it viable for new designs where proven reliability and retention capability are prioritized over ultra-low power or density.
71256L20YG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
71256L20YG FAQ
1.How can I place an order for 71256L20YG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71256L20YG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71256L20YG reliable?
The price and inventory of 71256L20YG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71256L20YG is usually 5 days.
3.What payment methods are accepted for 71256L20YG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71256L20YG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71256L20YG?
71256L20YG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71256L20YG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71256L20YG?
For technical support, including 71256L20YG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71256L20YG requirements.
6.How does Aetrix verify that 71256L20YG is sourced from the original manufacturer or authorized distributors?
All 71256L20YG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71256L20YG meets industry standards.
7.What is the process for return or replacement of 71256L20YG?
All 71256L20YG units undergo pre-shipment inspection (PSI). If there is an issue with 71256L20YG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71256L20YG part is unused and in its original packaging.
Return procedure for 71256L20YG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71256L20YG Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
