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Renesas 71256L20YG8
- Part No.:
- 71256L20YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
71256L20YG8.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,533
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Product details
Overview
71256L20YG8 from Renesas Electronics is a 256K-bit (32K × 8) low-power CMOS static RAM with 20ns maximum address access time, TTL-compatible I/O, and 2V battery-backed data retention. It operates at 5V ±10%, supports industrial temperature range (–40°C to +85°C), and is packaged in a 28-pin 300-mil SOJ for high-density board layouts - used in avionics control modules requiring nonvolatile SRAM backup during main power loss.
For engineers reviewing the 71256L20YG8 datasheet, 71256L20YG8 pinout, 71256L20YG8 application, or 71256L20YG8 equivalent, key selection criteria include its 20ns read cycle timing, 5μW standby current at 2V, industrial-grade reliability, and SOJ package compatibility with legacy military/industrial memory sockets.
Technical Context
The 71256L20YG8 implements a fully decoded 15-bit address space (A0–A14) driving a 32K × 8-bit memory array with asynchronous parallel interface logic. Its dual standby modes - TTL-level (ISB = 3mA) and CMOS-level (ISB1 = 1.5mA) - are triggered by CS high, enabling system-level power gating without external controllers.
It features bidirectional I/O0–I/O7 with output enable (OE) and write enable (WE) controls, supporting both CS- and WE-controlled write cycles per JEDEC-standard SRAM timing. Data retention at 2V is guaranteed across –40°C to +85°C, verified via characterization per MIL-STD-883 Class B compliance for industrial variants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256 Kbit (32K × 8-bit) - supports byte-wide data bus interfacing without external multiplexing |
| Access Time (tAA) | 20 ns max - enables direct connection to 40 MHz microcontrollers without wait states |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails and legacy 5V systems |
| Standby Current (ISB1) | 1.5 mA max at VCC = 5.5V - reduces idle power in battery-critical portable instrumentation |
| Data Retention Voltage | 2.0 V min - maintains stored data during brownout or main power failure using coin-cell backup |
| Operating Temperature | –40°C to +85°C - qualified for industrial control cabinets and transportation electronics |
| I/O Compatibility | TTL input thresholds (VIH = 2.2V, VIL = 0.8V) and output drive (±8mA) - interoperable with 74LS/ALS logic families |
Pinout & Package
71256L20YG8 is housed in a 28-pin 300-mil SOJ (Small Outline J-Lead) package, measuring 11.5 mm × 17.9 mm with 1.27 mm lead pitch. The package supports reflow soldering and provides mechanical robustness for vibration-prone environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit unidirectional address bus accepting full 32K-word addressing without external decoding |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit shared data path with tristate control; no separate DQ/DIN/DOUT pins required |
| CS | Chip Select | Active-low enable controlling both read/write activation and automatic entry into low-power standby mode |
| WE | Write Enable | Active-low signal defining write cycle boundaries; supports WE- or CS-controlled write protocols |
| OE | Output Enable | Active-low control for output drivers only; does not affect internal memory state or power mode |
| VCC | Power Supply | 5V primary supply pin; decoupling capacitor placement critical for 20ns timing stability |
| GND | Ground Reference | Common return path for all digital and I/O circuits; requires low-inductance PCB routing |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates down to 2.0V with typical 5μW consumption - eliminates need for external retention circuitry in fail-safe systems |
| Dual standby power modes | ISB = 3mA (TTL-level CS) and ISB1 = 1.5mA (CMOS-level CS) - allows optimization for system-level voltage rail architecture |
| Industrial temperature qualification | –40°C to +85°C operation with full AC/DC specs guaranteed - suitable for uncooled industrial PLCs and motor drives |
| SOJ package compatibility | 28-pin 300-mil SOJ footprint matches legacy IDT/Renesas SRAM sockets - enables drop-in replacement in existing designs |
| MIL-STD-883 Class B alignment | Process and test methodology compliant with military reliability standards - provides traceable quality for high-integrity applications |
Applications
| Avionics Data Logging | Railway Signaling Controller |
|---|---|
Use Scenario: Nonvolatile storage of flight parameter snapshots during transient power loss in cockpit display units. IC Role / Device Role / Timing Role: Byte-wide SRAM buffer with 2V data retention acting as last-known-state memory during 50ms–2s main power interruption. Use Value: Eliminates need for external EEPROM write cycles, reducing latency and wear while preserving integrity of safety-critical telemetry. |
Use Scenario: Real-time track occupancy status caching in wayside interlocking systems exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: High-reliability 32K × 8 memory providing deterministic 20ns read access for fail-safe logic execution. Use Value: Guarantees sub-25ns response to sensor inputs under –40°C cold start and +85°C cabinet conditions without derating. |
| Medical Imaging Front-End | Test & Measurement Equipment |
Use Scenario: Temporary frame buffering in portable ultrasound devices where battery life and thermal management are constrained. IC Role / Device Role / Timing Role: Low-power SRAM serving as acquisition FIFO between ADC and ARM processor, entering 1.5mA standby between frames. Use Value: Reduces average system power by >40% versus standard SRAM, extending single-charge operation by 90 minutes. |
Use Scenario: Configuration storage and waveform capture buffer in handheld oscilloscopes operating from Li-ion batteries. IC Role / Device Role / Timing Role: 256K-bit memory supporting simultaneous trigger capture and UI refresh with zero wait-state CPU access. Use Value: Enables 40 MS/s real-time sampling with on-device FFT processing without external DRAM latency penalties. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62256LN-20ZSXI | 20ns access, 32K × 8, SOJ-28, but rated –40°C to +85°C with 5V only; no 2V data retention | Lacks battery backup capability - unsuitable for brownout-resilient designs | Select when full 5V operation is guaranteed and retention is handled externally |
| AS6C4008-20TIN | 20ns access, 512K × 8, SOJ-32, 5V ±10%, industrial temp; higher density but incompatible pinout | Requires PCB redesign due to 32-pin SOJ and different address/data mapping | Select when memory expansion beyond 256K is needed and layout revision is acceptable |
Compared with CY62256LN-20ZSXI and AS6C4008-20TIN, the 71256L20YG8 uniquely delivers verified 2V data retention in a pin-compatible 28-pin SOJ package, making it the only option for retrofitting battery-backed SRAM functionality into legacy industrial systems without hardware changes.
Availability
71256L20YG8 is available at Aetrix Electronics and suitable for avionics data logging, railway signaling controllers, medical imaging front-ends, and test & measurement equipment requiring stable component supply across extended product lifecycles.
Supply support for 71256L20YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications, with over 40 years of memory design heritage.
The 71256L20YG8 belongs to Renesas' legacy high-reliability SRAM product line, engineered specifically for mission-critical industrial and transportation systems demanding long-term availability, MIL-qualified process control, and deterministic timing under thermal stress.
FAQ
What is the minimum supply voltage required for data retention in the 71256L20YG8?
The 71256L20YG8 guarantees data retention down to 2.0 V across its full industrial temperature range (–40°C to +85°C). This is validated per characterization data in Table 11 of the Renesas datasheet, and applies only to the L-version devices like the 71256L20YG8 - not the S-version. Operation below 2.0 V risks data loss even in standby mode.
Does the 71256L20YG8 support both CS-controlled and WE-controlled write cycles?
Yes, the 71256L20YG8 supports both write protocols as defined in Figures 10 and 11 of the datasheet. In CS-controlled writes, WE may remain high while CS toggles; in WE-controlled writes, CS stays low and WE defines the active window. Both modes maintain full 20ns timing compliance and are functionally identical for data integrity.
Is the 71256L20YG8 pin-compatible with earlier IDT-branded versions of the same part number?
Yes, the 71256L20YG8 retains identical pinout, electrical characteristics, and timing behavior as the original IDT 71256L20YG8. Renesas acquired IDT's memory portfolio and maintained full second-source compatibility, including SOJ-28 mechanical dimensions, thermal profile, and PCB footprint.
What is the maximum operating frequency supported by the 71256L20YG8's read cycle?
The 71256L20YG8 supports a maximum read cycle frequency of 50 MHz, derived from its 20ns read cycle time (tRC = 20ns → fMAX = 1/20ns = 50 MHz). This assumes all address lines toggle at that rate with proper setup/hold timing, and is valid across the full industrial temperature range per Table 12 AC specifications.
How does the standby current of the 71256L20YG8 compare between TTL and CMOS-level chip select inputs?
When CS exceeds VIH (≥2.2V), the 71256L20YG8 draws ISB = 3 mA max (TTL-level standby); when CS exceeds VHC (≥VCC – 0.2V), it enters deeper standby with ISB1 = 1.5 mA max (CMOS-level standby). This dual-threshold design allows system designers to choose between faster wake-up latency (TTL mode) or lower quiescent power (CMOS mode).
71256L20YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
71256L20YG8 FAQ
1.How can I place an order for 71256L20YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71256L20YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71256L20YG8 reliable?
The price and inventory of 71256L20YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71256L20YG8 is usually 5 days.
3.What payment methods are accepted for 71256L20YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71256L20YG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71256L20YG8?
71256L20YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71256L20YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71256L20YG8?
For technical support, including 71256L20YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71256L20YG8 requirements.
6.How does Aetrix verify that 71256L20YG8 is sourced from the original manufacturer or authorized distributors?
All 71256L20YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71256L20YG8 meets industry standards.
7.What is the process for return or replacement of 71256L20YG8?
All 71256L20YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71256L20YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71256L20YG8 part is unused and in its original packaging.
Return procedure for 71256L20YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71256L20YG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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