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Renesas 71256L25YG8
- Part No.:
- 71256L25YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
71256L25YG8.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,585
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Product details
Overview
71256L25YG8 from Renesas is a 256K (32K × 8-bit) low-power CMOS static RAM with 25ns access time, TTL-compatible I/O, and battery-backed data retention down to 2V. It operates across commercial temperature range (0°C to +70°C), supports full standby mode (1.5mA typical), and is packaged in 28-pin 300-mil SOJ for high-density board layouts - used in legacy industrial controllers and avionics subsystems requiring nonvolatile SRAM hold.
For engineers reviewing the 71256L25YG8 datasheet, 71256L25YG8 pinout, 71256L25YG8 application, or 71256L25YG8 equivalent, key selection criteria include its 25ns military-grade timing margin, 5μW battery-retention current at 2V, TTL-level interface compatibility, SOJ-28 footprint, and MIL-STD-883 Class B compliance for ruggedized systems.
Technical Context
This device implements a fully decoded 15-bit address space (A0–A14) driving a 32K × 8-bit memory array with asynchronous read/write control via CS, WE, and OE. Its dual standby modes - TTL-level (ISB = 3mA) and CMOS-level (ISB1 = 1.5mA) - are triggered by chip select voltage thresholds (VIH/VHC), enabling precise power-state management in mixed-signal systems.
The 71256L25YG8 uses true CMOS circuitry with input/output buffers designed for direct TTL interfacing (VIH = 2.2V min, VIL = 0.8V max), and features guaranteed data retention at VCC ≥ 2.0V with ICCDR ≤ 120μA (typ.) - a critical capability for battery-backed real-time clocks and configuration storage in power-fail scenarios.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8-bit (262,144 bits), single-port asynchronous SRAM |
| Access Time (tAA) | 25ns max - defines minimum address-to-valid-data delay in read cycles |
| Supply Voltage | 5.0V ± 10% (4.5–5.5V) - compatible with standard TTL logic rails |
| Data Retention Voltage | 2.0V min - enables operation from backup coin cell without regulator |
| Standby Current (ISB1) | 1.5mA max at VCC = 5.5V - ultra-low power state when CS > VHC |
| Operating Temperature | 0°C to +70°C - commercial grade, validated per Renesas specification |
| I/O Compatibility | TTL-input and TTL-output - eliminates level-shifter requirements in 5V systems |
Pinout & Package
71256L25YG8 is housed in a 28-pin SOJ (Small Outline J-lead) package with 300-mil body width and J-bend leads - optimized for surface-mount assembly and thermal reliability in compact enclosures.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit binary address bus selecting one of 32K memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel interface supporting simultaneous read/write data transfer |
| CS | Chip Select | Active-low enable controlling device activation and automatic standby entry |
| WE | Write Enable | Active-low signal gating write operations; high = read or high-Z state |
| OE | Output Enable | Active-low control for output drivers - independent of WE for read gating |
| VCC | Power Supply | +5V supply pin; decoupling required within 10mm for stable 25ns timing |
| GND | Ground Reference | Signal and power return path; must be low-impedance plane for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby mode | 1.5mA max ISB1 current at VCC = 5.5V - reduces system power budget during idle |
| Battery backup retention | Operates at 2.0V with ≤120μA ICCDR - enables years of data hold on CR2032 cells |
| TTL-compatible I/O | VIH = 2.2V min, VIL = 0.8V max - interoperable with legacy 74LS/ALS logic without translators |
| MIL-STD-883 Class B compliance | Qualified for military temperature range (−55°C to +125°C) - ensures reliability in extended environments |
| SOJ-28 packaging | 300-mil body with J-leads - provides mechanical robustness and thermal cycling endurance vs. gull-wing |
Applications
| Avionics Configuration Storage | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Storing flight-critical configuration parameters and calibration tables in airborne mission computers where main power may be interrupted. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding boot-up settings and sensor offsets during brownout events. Use Value: 2V data retention allows uninterrupted operation from backup battery, eliminating EEPROM wear-out and write-latency penalties. |
Use Scenario: Caching real-time I/O status and ladder logic variables in programmable logic controllers deployed in factory automation lines. IC Role / Device Role / Timing Role: High-speed scratchpad memory interfacing directly to microcontroller data bus at 40MHz burst rates. Use Value: 25ns access time enables deterministic scan-cycle execution without wait states; SOJ-28 footprint fits dense backplane layouts. |
| Military Radio Firmware Cache | Test Equipment Calibration Memory |
Use Scenario: Holding firmware patches and cryptographic keys in handheld tactical radios operating across −40°C to +85°C industrial variants. IC Role / Device Role / Timing Role: Secure, fast-access memory mapped into processor address space for encrypted boot image staging. Use Value: MIL-STD-883 Class B qualification ensures functional integrity under shock, vibration, and extreme thermal cycling. |
Use Scenario: Storing instrument-specific calibration coefficients and linearity correction tables in benchtop oscilloscopes and spectrum analyzers. IC Role / Device Role / Timing Role: Read-only configuration store accessed during power-on self-test (POST) before ADC/DAC initialization. Use Value: TTL compatibility eliminates level-shifting components; 1.5mA standby draw extends battery life in portable test gear. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62256LN-25ZSXIT | 25ns access, 32K × 8, SOJ-28, but requires 5V only (no 2V retention) | Lacks battery backup capability - unsuitable for fail-safe data hold | Select when pure speed and cost matter more than retention voltage margin |
| AS6C4008-25TIN | 25ns, 512K × 8, TSSOP-32 - double density but different pinout and voltage range (2.7–3.6V) | Not pin-compatible; requires PCB redesign and logic-level translation | Choose for higher density in new 3.3V designs - not a drop-in replacement |
Compared with 71256L25YG8, CY62256LN-25ZSXIT offers identical speed and package but no 2V retention, while AS6C4008-25TIN delivers greater capacity at lower voltage yet demands layout and interface changes - making 71256L25YG8 uniquely suited for legacy 5V systems needing guaranteed battery-backed operation.
Availability
71256L25YG8 is available at Aetrix Electronics and suitable for avionics configuration storage, industrial PLC data buffering, and military radio firmware caching requiring stable component supply across extended lifecycle programs.
Supply support for 71256L25YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71256L25YG8 belongs to Renesas' legacy high-reliability SRAM product line, engineered for mission-critical applications demanding MIL-qualified timing, wide-temperature operation, and battery-backed data integrity.
FAQ
What is the maximum access time guaranteed for the 71256L25YG8?
The 71256L25YG8 guarantees a maximum address access time (tAA) of 25ns across the commercial temperature range (0°C to +70°C), as specified in Renesas' AC Electrical Characteristics table for the L-version at 25ns speed grade - measured under VCC = 5.0V ± 10% and load conditions per JEDEC standards.
Does the 71256L25YG8 support true battery backup operation below 5V?
Yes, the 71256L25YG8 supports true battery backup operation down to 2.0V (VDR), retaining stored data with ICCDR ≤ 120μA typical - confirmed in Renesas' Data Retention Characteristics table (Table 11). This enables direct connection to 2V lithium coin cells without regulation.
Is the 71256L25YG8 pin-compatible with the 71256S25YG8?
No - while both share the same SOJ-28 package and pinout, the 71256L25YG8 (low-power version) and 71256S25YG8 (standard-power version) differ in standby current (1.5mA vs. 20mA) and data retention capability (2V vs. none), but pin functions and physical layout are identical per Renesas Pin Configurations diagram.
What is the operating temperature range certified for the 71256L25YG8?
The 71256L25YG8 is rated for commercial temperature operation from 0°C to +70°C, as explicitly stated in Renesas' Recommended Operating Conditions table (Table 5) and Orderable Part Information - though the underlying die is MIL-STD-883 Class B qualified for −55°C to +125°C.
Can the 71256L25YG8 be used in systems requiring TTL-level signaling?
Yes, the 71256L25YG8 features fully TTL-compatible inputs and outputs: VIH = 2.2V min, VIL = 0.8V max, VOL = 0.4V max at 8mA, and VOH = 2.4V min at –4mA - allowing direct interface with 74LS, 74ALS, and other 5V TTL families without level shifters.
71256L25YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
71256L25YG8 FAQ
1.How can I place an order for 71256L25YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71256L25YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71256L25YG8 reliable?
The price and inventory of 71256L25YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71256L25YG8 is usually 5 days.
3.What payment methods are accepted for 71256L25YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71256L25YG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71256L25YG8?
71256L25YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71256L25YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71256L25YG8?
For technical support, including 71256L25YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71256L25YG8 requirements.
6.How does Aetrix verify that 71256L25YG8 is sourced from the original manufacturer or authorized distributors?
All 71256L25YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71256L25YG8 meets industry standards.
7.What is the process for return or replacement of 71256L25YG8?
All 71256L25YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71256L25YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71256L25YG8 part is unused and in its original packaging.
Return procedure for 71256L25YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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