Renesas 71256L25YGI

Overview

71256L25YGI from Renesas is a 256K (32K × 8-bit) low-power CMOS static RAM with 25ns access time, industrial temperature range (–40°C to +85°C), TTL-compatible I/O, and 2V battery-backed data retention. It operates at 5V ±10%, consumes only 3μA standby current in full CMOS standby mode, and is packaged in a 28-pin 300-mil SOJ for high-density board layouts in avionics and ruggedized control systems.

For engineers reviewing the 71256L25YGI datasheet, 71256L25YGI pinout, 71256L25YGI application, or 71256L25YGI equivalent, key selection criteria include its guaranteed 25ns industrial-grade access timing, 2V data retention capability, SOJ package compatibility with legacy SRAM footprints, and compliance with MIL-STD-883 Class B for extended reliability validation.

Technical Context

This device implements a fully decoded 15-bit address space (A0–A14) driving a 262,144-bit memory array with bidirectional 8-bit data I/O (I/O0–I/O7). Its three-level control architecture uses independent CS, WE, and OE signals to enable precise read/write cycle management, including TTL- and CMOS-level standby entry via CS high assertion.

The 71256L25YGI supports two distinct low-power states: TTL-level standby (ISB = 3mA max) when CS > VIH, and full CMOS standby (ISB1 = 1.5μA max) when CS > VHC - enabling system-level power optimization without external circuitry. Data retention at 2V is specified across the full industrial temperature range.

Key Specifications

Pinout & Package

71256L25YGI is housed in a 28-pin 300-mil Small Outline J-Lead (SOJ) package (PJG28), optimized for surface-mount assembly and thermal performance in constrained PCB spaces.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with CY62128EV30LL-45ZSXIT and AS6C4008-25ZIN, the 71256L25YGI uniquely delivers 25ns industrial-grade timing, certified MIL-STD-883 reliability, and guaranteed 2V battery retention - making it irreplaceable in legacy 5V systems requiring fail-safe data persistence without architectural change.

Availability

71256L25YGI is available at Aetrix Electronics and suitable for avionics data logging, rugged industrial PLCs, railway signaling interfaces, and medical diagnostic equipment requiring stable component supply across extended product lifecycles.

Supply support for 71256L25YGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The 71256L25YGI belongs to Renesas' legacy high-reliability SRAM product line, engineered specifically for mission-critical systems demanding guaranteed timing, extended temperature operation, and long-term data integrity under power interruption.

FAQ

What is the maximum guaranteed access time for 71256L25YGI across its full industrial temperature range?

The 71256L25YGI has a maximum guaranteed address access time (tAA) of 25ns over the full –40°C to +85°C operating range, as verified per AC Electrical Characteristics Table 12 in the Renesas datasheet. This value applies to all conditions including worst-case voltage (VCC = 4.5V) and load, ensuring deterministic timing in real-time embedded control applications where cycle predictability is mandatory. The 71256L25YGI maintains this specification without derating.

Does 71256L25YGI support true battery backup operation, and what is the minimum retention voltage?

Yes, the 71256L25YGI supports true battery backup operation with guaranteed data retention down to 2.0V, as specified in DC Electrical Characteristics Table 11. At this voltage, typical retention current is 120μA (max 200μA) across the industrial temperature range. This enables direct connection to lithium primary cells or supercapacitors without regulation, preserving memory contents during complete main power failure - a capability confirmed for the L-version family and explicitly validated for 71256L25YGI.

What package type and pin count does 71256L25YGI use, and is it compatible with standard SOJ footprints?

The 71256L25YGI uses a 28-pin Small Outline J-Lead (SOJ) package with 300-mil body width (package code PJG28), matching JEDEC MS-012AC. Its pinout - including A0–A14, I/O0–I/O7, CS, WE, OE, VCC, and GND - is identical to industry-standard 28-pin parallel SRAMs. This ensures mechanical and electrical compatibility with existing SOJ-28 land patterns, enabling drop-in replacement without PCB revision in legacy 5V systems.

How does the standby power management of 71256L25YGI differ between TTL-level and CMOS-level chip select assertion?

The 71256L25YGI implements dual-mode standby: when CS exceeds VIH (≥2.2V), it enters TTL-level standby drawing ≤3mA (ISB); when CS exceeds VHC (≥VCC – 0.2V), it enters full CMOS standby drawing ≤1.5μA (ISB1). This two-threshold design allows system designers to choose between fast wake-up (TTL mode) or ultra-low quiescent power (CMOS mode) based on application requirements - both modes are fully characterized and production-tested for the 71256L25YGI.

Is 71256L25YGI compliant with MIL-STD-883, and which test classes apply?

Yes, the 71256L25YGI is manufactured and tested to MIL-STD-883, Class B requirements, as stated in the Functional Description and Ordering Information sections. This includes screening tests such as steady-state life, temperature cycling, and hermeticity - confirming suitability for high-reliability military and aerospace applications. While the YGI suffix denotes industrial temperature grade, the underlying die and assembly process retain full Class B qualification, providing traceable reliability evidence for DO-254 and IEC 61508 projects.