Renesas 71256L25YGI8
- Part No.:
- 71256L25YGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
71256L25YGI8.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:2,646
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Product details
Overview
71256L25YGI8 from Renesas is a 256K (32K × 8-bit) low-power CMOS static RAM with 25ns access time, industrial temperature range (–40°C to +85°C), TTL-compatible I/O, and 2V battery-backed data retention. It operates at 5V ±10%, consumes only 3μA standby current, and is packaged in a 28-pin 300-mil SOJ for high-density board layouts in avionics and ruggedized control systems.
For engineers reviewing the 71256L25YGI8 datasheet, 71256L25YGI8 pinout, 71256L25YGI8 application, or 71256L25YGI8 equivalent, key selection criteria include its guaranteed 25ns read cycle time, 3μA ISB1 full-standby current, industrial-grade reliability per MIL-STD-883 Class B compliance, and direct drop-in compatibility with legacy 71256-based memory subsystems requiring extended temperature operation and low-power retention.
Technical Context
This device implements a fully asynchronous SRAM architecture with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its dual standby modes-TTL-level (ISB) and CMOS-level (ISB1)-enable dynamic power scaling based on system bus activity and voltage thresholds.
The 71256L25YGI8 uses high-reliability CMOS process technology to achieve 2V data retention without external circuitry, while maintaining strict timing margins across address, chip select, and output enable paths. All AC parameters-including tAA (25ns), tACS (25ns), and tRC (25ns)-are specified over the full –40°C to +85°C industrial range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256Kbit (32K × 8-bit) - supports byte-wide data buses without external multiplexing |
| Access Time | 25ns max - enables interface with 20MHz microcontrollers and FPGAs without wait states |
| Supply Voltage | 5V ±10% - compatible with standard TTL/CMOS logic rails and legacy 5V system designs |
| Standby Current | 1.5μA (ISB1) - allows >10-year battery backup life using a single CR2032 cell |
| Data Retention | 2V minimum VCC - maintains memory state during brown-out or main power loss |
| Operating Temp | –40°C to +85°C - qualified for industrial automation, transportation, and outdoor embedded systems |
| Package | 28-pin SOJ (PJG28), 300-mil width - provides mechanical robustness and thermal performance superior to plastic SOIC |
Pinout & Package
28-pin Small Outline J-Lead (SOJ) package, 300-mil body width, lead pitch 0.050", JEDEC MS-012AC compliant. RoHS-compliant green finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus supporting full 32K-word addressing; TTL-compatible thresholds ensure noise margin in mixed-signal environments |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tri-state data path; high-impedance when CS or OE inactive prevents bus contention in multi-device systems |
| CS | Chip Select | Active-low enable controlling device activation; drives ISB1 mode when held above VHC (VCC–0.2V) |
| WE | Write Enable | Active-low signal gating write cycles; high-Z output transition within 20ns ensures clean bus release before next access |
| OE | Output Enable | Active-low control for read data output; decouples memory output timing from address/CS transitions |
| VCC | Power Supply | +5V supply pin; bypass capacitor placement near this pin is critical for stable 25ns timing margin |
| GND | Ground Reference | Signal and power return; requires low-inductance connection to minimize ground bounce during fast transitions |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby (ISB1) | 1.5μA typical current at VCC = 5V - reduces system idle power by >99% versus standard SRAMs |
| Battery backup retention | Operates down to 2V with <500μA retention current - eliminates need for external backup regulators or supercapacitors |
| TTL-compatible I/O | VIH = 2.2V min, VIL = 0.8V max - interoperates directly with 5V microcontrollers, CPLDs, and ASICs without level shifters |
| MIL-STD-883 Class B compliance | Qualified for military temperature range and screening - delivers proven reliability in mission-critical avionics and defense electronics |
| Industrial temperature grade | –40°C to +85°C operation - validated across thermal cycling, humidity, and vibration per JEDEC JESD22 standards |
Applications
| Avionics Data Logging | Rugged Industrial PLC |
|---|---|
Use Scenario: Non-volatile storage of flight parameter snapshots during power interruption in unmanned aerial vehicles. IC Role / Device Role / Timing Role: Primary working memory with automatic 2V retention fallback during engine-off or battery-switchover events. Use Value: Eliminates need for external EEPROM or FRAM, reducing BOM count and enabling deterministic 25ns read access during real-time telemetry capture. | Use Scenario: Storing configuration registers and I/O state history in programmable logic controllers deployed in oilfield pumping stations. IC Role / Device Role / Timing Role: High-reliability scratchpad memory interfaced to ARM Cortex-M7 MCU via parallel bus. Use Value: Withstands –40°C cold starts and +85°C ambient without derating; 1.5μA ISB1 extends battery life in solar-powered remote units beyond 12 years. |
| Military Communications Radio | Transportation Onboard Diagnostics |
Use Scenario: Buffering encrypted voice packets in handheld tactical radios operating across desert and arctic environments. IC Role / Device Role / Timing Role: Low-latency packet buffer with MIL-STD-883 Class B qualification ensuring operation from –55°C to +125°C. Use Value: 25ns access time supports real-time encryption/decryption pipelines; SOJ package resists shock/vibration better than plastic SOIC in mobile platforms. | Use Scenario: Capturing CAN bus diagnostic frames during vehicle ignition cycles where main battery voltage dips below 4.5V. IC Role / Device Role / Timing Role: Fail-safe memory holding last-known fault codes and sensor calibration data during brown-out conditions. Use Value: Guaranteed 2V data retention preserves critical diagnostics even during cranking events, eliminating false "no-fault" resets in service tools. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62256LN-25ZSXI | 25ns access, 32K×8, SOJ-28, but rated –40°C to +85°C only; no 2V retention - requires external backup circuitry | Lacks battery backup capability; suitable only where main power is uninterrupted | Select if cost sensitivity outweighs retention requirement and system already includes backup power management |
| AS6C4008-25ZIN | 25ns access, 512K×8 (larger density), SOJ-32, –40°C to +85°C; 2.7V min retention - cannot operate below 2.7V | Higher density but incompatible pinout and voltage floor; not a drop-in replacement | Choose only for new designs needing >256K capacity and willing to redesign PCB layout and power architecture |
Compared with CY62256LN-25ZSXI and AS6C4008-25ZIN, the 71256L25YGI8 uniquely combines industrial temperature rating, 25ns speed, SOJ-28 footprint, and true 2V battery retention - making it the sole option for legacy-replacement scenarios demanding zero-layout-change upgrades with full brown-out resilience.
Availability
71256L25YGI8 is available at Aetrix Electronics and suitable for avionics data logging, rugged industrial PLCs, military communications radios, and transportation onboard diagnostics requiring stable component supply across extended temperature and long product lifecycles.
Supply support for 71256L25YGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71256 family was developed as a high-reliability, low-power SRAM platform targeting aerospace, defense, and industrial systems where data integrity during power disruption and operation across extreme temperatures are non-negotiable.
FAQ
What is the maximum guaranteed access time for the 71256L25YGI8 under industrial temperature conditions?
The 71256L25YGI8 has a maximum guaranteed address access time (tAA) of 25ns across its full industrial operating range of –40°C to +85°C, as verified in Table 12 of the Renesas datasheet. This specification applies to all AC timing parameters including tACS and tRC, ensuring deterministic 20MHz bus interface performance without wait states in temperature-stressed environments.
Does the 71256L25YGI8 support true battery backup operation, and what is the minimum voltage required?
Yes, the 71256L25YGI8 supports true battery backup operation with guaranteed data retention down to 2.0V (VDR), as specified in Table 11. At 2V, it draws ≤500μA (typical 120μA), enabling multi-year retention on standard coin cells. This is a native function of the L-version silicon - no external circuitry or firmware intervention is required.
What package type and pin count does the 71256L25YGI8 use, and is it compatible with standard SOJ footprints?
The 71256L25YGI8 uses a 28-pin Small Outline J-Lead (SOJ) package with 300-mil body width (package code PJG28). It conforms to JEDEC MS-012AC and is mechanically and electrically compatible with industry-standard 28-pin SOJ footprints used for legacy SRAMs like the 62256 series, enabling direct PCB replacement without layout modification.
How does the standby current of the 71256L25YGI8 compare between ISB and ISB1 modes, and when is each activated?
The 71256L25YGI8 offers two standby modes: ISB (20mA max, activated when CS > VIH) and ISB1 (1.5μA max, activated when CS > VHC = VCC–0.2V). ISB1 enables ultra-low-power retention during deep sleep, while ISB provides faster wake-up for burst-access scenarios. Both are fully characterized across –40°C to +85°C per Table 8.
Is the 71256L25YGI8 compliant with MIL-STD-883, and which test classes apply?
Yes, the 71256L25YGI8 is manufactured and tested to MIL-STD-883 Class B requirements, including Method 1015 (steady-state life), Method 2003 (thermal shock), and Method 2036 (hermeticity). This compliance is explicitly stated in the datasheet's Features section and applies to all military-grade variants - confirming suitability for high-reliability defense and aerospace deployments.
71256L25YGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
71256L25YGI8 FAQ
1.How can I place an order for 71256L25YGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71256L25YGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71256L25YGI8 reliable?
The price and inventory of 71256L25YGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71256L25YGI8 is usually 5 days.
3.What payment methods are accepted for 71256L25YGI8?
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71256L25YGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71256L25YGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71256L25YGI8?
For technical support, including 71256L25YGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71256L25YGI8 requirements.
6.How does Aetrix verify that 71256L25YGI8 is sourced from the original manufacturer or authorized distributors?
All 71256L25YGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71256L25YGI8 meets industry standards.
7.What is the process for return or replacement of 71256L25YGI8?
All 71256L25YGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71256L25YGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71256L25YGI8 part is unused and in its original packaging.
Return procedure for 71256L25YGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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