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Renesas 71256L35YG
- Part No.:
- 71256L35YG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
71256L35YG.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:2,715
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Product details
Overview
71256L35YG from Renesas is a 256K (32K × 8-bit) low-power CMOS static RAM with 35ns maximum access time, TTL-compatible I/O, and 2V battery-backed data retention. It operates across commercial temperature range (0°C to +70°C), uses 5V ±10% supply, and supports standby current as low as 3μA in full CMOS-level standby mode. It serves as nonvolatile buffer memory in legacy industrial controllers requiring reliable power-loss resilience.
For engineers reviewing the 71256L35YG datasheet, 71256L35YG pinout, 71256L35YG application, or 71256L35YG equivalent, key selection criteria include verified 35ns read cycle timing, SOJ-28 package compatibility, battery-retention voltage margin at 2.0V, and MIL-STD-883 Class B compliance path for ruggedized upgrades.
Technical Context
This device implements a fully decoded 15-bit address space (A0–A14) driving a 262,144-bit SRAM array with bidirectional 8-bit data bus (I/O0–I/O7). Control logic uses three independent enables - CS (chip select), WE (write enable), and OE (output enable) - to manage read/write/standby states with precise timing windows defined per AC table.
It features dual standby modes: TTL-level standby (ISB = 3mA max) when CS > VIH, and full CMOS-level standby (ISB1 = 1.5μA typ.) when CS > VHC. Data retention at 2V is guaranteed across commercial temperature range, with tCDR = 0ns and tR = 0ns recovery upon VCC restoration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8-bit (262,144 bits), fixed parallel interface |
| Access Time (tAA) | 35ns max - defines minimum address-to-valid-data delay in active read cycles |
| Supply Voltage | 5.0V ±10% - requires stable 4.5–5.5V rail; no 3.3V operation supported |
| Standby Current (ISB1) | 1.5μA typ. at VCC = 5.5V - enables ultra-low-power hold during system sleep |
| Data Retention Voltage | 2.0V min - sustains stored data without refresh when main VCC fails |
| Operating Temperature | 0°C to +70°C - commercial grade; not rated for industrial (–40°C) or military (–55°C) ranges |
| I/O Compatibility | TTL input thresholds (VIH = 2.2V, VIL = 0.8V) and output drive (VOL = 0.4V @ 8mA) |
Pinout & Package
71256L35YG is supplied in a 28-pin 300-mil SOJ (Small Outline J-Lead) package, pin-compatible with industry-standard 28-pin SOJ footprint. Lead finish is lead-free (RoHS-compliant), and body material is plastic with gull-wing J-leads for surface-mount assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit unidirectional address bus; fully decoded to select one of 32,768 locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit shared data path; high-impedance when CS HIGH or OE/WE inactive |
| CS | Chip Select | Active-low enable; drives device into TTL-level standby (ISB) when HIGH, CMOS-level standby (ISB1) when > VHC |
| WE | Write Enable | Active-low control for write cycles; must be LOW concurrently with CS LOW to initiate write |
| OE | Output Enable | Active-low control for read output drivers; does not affect write or standby behavior |
| VCC | Power Supply | Primary 5V supply; powers core logic and I/O buffers; decoupling required per layout guidelines |
| GND | Ground Reference | Common return for all signals and power; must be low-impedance connection to system ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates down to 2.0V VCC with typical ICCDR = 120μA - enables seamless failover to backup battery without data loss |
| Dual standby power modes | ISB = 3mA (TTL-level) and ISB1 = 1.5μA (CMOS-level) - selectable via CS voltage threshold for optimal system power budgeting |
| TTL-compatible interface | VIH = 2.2V min, VOL = 0.4V max @ 8mA - interoperable with legacy 5V microcontrollers and bus transceivers without level shifters |
| High noise immunity | VIL = 0.8V max, VIH = 2.2V min with 0.4V noise margin - robust against EMI in industrial control cabinets |
| Green packaging option | Lead-free, halogen-free SOJ construction - meets RoHS Directive 2011/65/EU and JEDEC JS709E requirements |
Applications
| Industrial PLC Memory Buffer | Military Avionics Data Logging |
|---|---|
Use Scenario: Real-time I/O status caching in programmable logic controllers during transient brownouts. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding last-known sensor/actuator state while main CPU resets. Use Value: 2V data retention ensures zero data loss during 50–200ms power interruptions common in factory floor environments. |
Use Scenario: Mission-critical flight parameter storage in airborne telemetry units exposed to wide thermal swings. IC Role / Device Role / Timing Role: High-reliability scratchpad memory capturing GPS timestamps and sensor snapshots before power-down. Use Value: MIL-STD-883 Class B qualification path and –55°C to +125°C capable variants (e.g., 71256L35DB) support design reuse in hardened systems. |
| Medical Diagnostic Equipment Cache | Legacy Telecom Line Card Buffer |
Use Scenario: Temporary waveform storage in portable ultrasound devices where battery life and data integrity are critical. IC Role / Device Role / Timing Role: Low-power SRAM buffering digitized RF echo data prior to DSP processing or flash transfer. Use Value: 1.5μA ISB1 current extends battery runtime by >12 hours versus standard 35ns SRAMs in standby mode. |
Use Scenario: Protocol translation buffer in T1/E1 line interface cards interfacing legacy 5V ASICs. IC Role / Device Role / Timing Role: Glue logic memory bridging between 5V microcontroller and serial framer ICs. Use Value: Pinout and timing compatibility with 71256S35YG allows drop-in replacement without PCB redesign in field-upgrade scenarios. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C4008-35SCN | 35ns access, 5V-only, 28-pin SOJ, but no battery retention - ICCDR undefined below 4.5V | Lacks 2V data retention; unsuitable for battery-backup designs | Select only if system has continuous 5V supply and no brownout risk |
| IS61LV25616AL-10TLI | 10ns access, 3.3V supply, 44-pin TSOP - higher speed but incompatible voltage and package | Requires level-shifting and board rework; not pin-compatible | Choose for new 3.3V designs needing faster throughput, not for 71256L35YG replacement |
Compared with AS6C4008-35SCN and IS61LV25616AL-10TLI, the 71256L35YG uniquely delivers verified 2V data retention in a drop-in SOJ-28 footprint, making it irreplaceable in legacy 5V systems requiring fail-safe memory hold without hardware modification.
Availability
71256L35YG is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic equipment caches, and legacy telecom line card buffers requiring stable component supply and long-term obsolescence management.
Supply support for 71256L35YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71256L series belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for mission-critical 5V systems requiring battery-backed data persistence and MIL-STD-883 qualified variants.
FAQ
What is the minimum VCC required for data retention in the 71256L35YG?
The 71256L35YG guarantees data retention down to 2.0V VCC across its commercial temperature range (0°C to +70°C). At this voltage, typical data retention current is 120μA, and chip deselect-to-retention time (tCDR) is 0ns - meaning retention begins immediately upon CS going HIGH under 2V conditions. This specification is validated per Table 11 in the Renesas datasheet.
Does the 71256L35YG support industrial temperature range (–40°C to +85°C)?
No, the 71256L35YG is specified only for commercial temperature range (0°C to +70°C). Industrial-grade variants exist under different orderable part numbers - for example, 71256L35YGI and 71256L35YGI8 - which are explicitly marked with "I" suffix and qualified for –40°C to +85°C operation per the Ordering Information table on page 10 of the datasheet.
What is the difference between ISB and ISB1 standby current in the 71256L35YG?
ISB (20mA max) activates when CS exceeds VIH (≥2.2V), placing the device in TTL-level standby. ISB1 (1.5μA typ.) engages only when CS exceeds VHC (VCC – 0.2V), enabling ultra-low-power CMOS-level standby. For 5V operation, VHC ≈ 4.8V - so ISB1 requires tighter CS voltage control but reduces standby current by >99% compared to ISB.
Can the 71256L35YG be used as a direct replacement for the 71256S35YG?
Yes, the 71256L35YG is pin-compatible and functionally identical to the 71256S35YG in read/write timing and interface logic, but offers lower power: ISB1 = 1.5μA vs ISB = 20mA, and data retention at 2V. No PCB changes are needed; however, system firmware must ensure CS voltage reaches VHC to activate full low-power mode.
Is the 71256L35YG RoHS-compliant and lead-free?
Yes, the 71256L35YG is a green part meeting RoHS Directive 2011/65/EU and JEDEC JS709E standards. Its SOJ-28 package uses lead-free matte tin plating and halogen-free molding compound, as confirmed in the "Green parts available" section (page 1) and Ordering Information notes (page 9) of the Renesas datasheet.
71256L35YG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
71256L35YG FAQ
1.How can I place an order for 71256L35YG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71256L35YG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71256L35YG reliable?
The price and inventory of 71256L35YG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71256L35YG is usually 5 days.
3.What payment methods are accepted for 71256L35YG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71256L35YG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71256L35YG?
71256L35YG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71256L35YG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71256L35YG?
For technical support, including 71256L35YG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71256L35YG requirements.
6.How does Aetrix verify that 71256L35YG is sourced from the original manufacturer or authorized distributors?
All 71256L35YG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71256L35YG meets industry standards.
7.What is the process for return or replacement of 71256L35YG?
All 71256L35YG units undergo pre-shipment inspection (PSI). If there is an issue with 71256L35YG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71256L35YG part is unused and in its original packaging.
Return procedure for 71256L35YG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71256L35YG Tags
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