Renesas 71256L35YGI

Overview

71256L35YGI from Renesas Electronics is a 256K (32K × 8-bit) low-power CMOS static RAM with 35ns maximum access time, industrial temperature range (–40°C to +85°C), and 2V battery backup data retention capability. It operates at 5V ±10%, consumes only 3μA standby current in full CMOS-level standby mode, and features TTL-compatible I/O for direct interfacing with legacy microcontrollers and bus systems in embedded control and instrumentation applications.

For engineers reviewing the 71256L35YGI datasheet, 71256L35YGI pinout, 71256L35YGI application, or 71256L35YGI equivalent, key selection criteria include its SOJ-28 package, guaranteed 35ns read/write timing across industrial temperatures, battery-backed data retention down to 2V, low 3μA ISB1 standby current, and MIL-STD-883 Class B compliance readiness via Renesas' qualified process flow.

Technical Context

This device implements a fully decoded 15-bit address space (A0–A14) driving a 262,144-bit memory array with bidirectional 8-bit data I/O (I/O0–I/O7). Its control architecture uses three independent active-low enables-CS (chip select), WE (write enable), and OE (output enable)-to support both CS-controlled and WE-controlled write cycles with precise timing overlap requirements (e.g., tDW = 15ns min).

The 71256L35YGI supports two distinct standby modes: TTL-level standby (ISB = 3mA) when CS > VIH, and full CMOS-level standby (ISB1 = 1.5μA) when CS > VHC, enabling dynamic power scaling in battery-critical systems. Data retention at 2V is validated across the full industrial temperature range, with no external circuitry required beyond VCC and VDR supply decoupling.

Key Specifications

Pinout & Package

71256L35YGI is housed in a 28-pin SOJ (Small Outline J-Lead) package with 300-mil body width (PJG28 code), optimized for high-density PCB layouts and reflow soldering. Pin pitch is 0.050", lead finish is matte tin, and package meets JEDEC MS-012 standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with 71256L35YGI, CY62128EV30LL-45ZSXIT offers double density but lacks 2V retention and 5V compatibility, while AS6C4008-35TIN matches speed and voltage but increases board area and standby power by 16× - making 71256L35YGI optimal for space-constrained, battery-backed 5V systems requiring long-term data integrity.

Availability

71256L35YGI is available at Aetrix Electronics and suitable for industrial PLCs, avionics black boxes, and medical infusion pumps requiring stable component supply, long-lifecycle support, and guaranteed battery-backed data retention.

Supply support for 71256L35YGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The 71256L series belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for mission-critical industrial and aerospace systems demanding extended temperature operation, low-power standby, and robust data retention without external support circuitry.

FAQ

What is the guaranteed data retention voltage for 71256L35YGI?

The 71256L35YGI guarantees data retention down to 2.0V across its full industrial temperature range (–40°C to +85°C), as specified in Table 11 of the Renesas datasheet. This allows direct connection to a 2V lithium coin cell or supercapacitor without regulation, maintaining memory contents during main power loss. The 71256L35YGI does not require external retention circuitry or refresh cycles.

Does 71256L35YGI support both CS-controlled and WE-controlled write cycles?

Yes, the 71256L35YGI supports both write control methods as defined in Figures 10 and 11 of the datasheet. In CS-controlled writes, WE remains HIGH while CS pulses LOW; in WE-controlled writes, CS stays LOW and WE provides the active strobe. The 71256L35YGI enforces strict timing windows (e.g., tDW = 15ns min) for data validity in either mode, ensuring reliable writes across industrial temperatures.

What is the difference between ISB and ISB1 standby current in 71256L35YGI?

ISB (3mA max) activates when CS exceeds VIH (≥2.2V), placing the device in TTL-level standby; ISB1 (1.5μA max) engages when CS exceeds VHC (≥VCC – 0.2V), enabling full CMOS-level power-down. The 71256L35YGI uses this dual-threshold design so system designers can choose between faster wake-up (ISB) or ultra-low power (ISB1) based on application needs - both are guaranteed for the 71256L35YGI across –40°C to +85°C.

Is 71256L35YGI pin-compatible with other members of the 71256L family?

Yes, all 71256L variants - including 71256L20YGI, 71256L25YGI, and 71256L35YGI - share identical 28-pin SOJ (PJG28) pinouts and electrical signaling. Speed grade differences (20/25/35ns) affect only internal timing parameters; address, data, and control pin functions remain unchanged. This allows drop-in replacement within the same package and temperature grade, simplifying design reuse for the 71256L35YGI and siblings.

What package type and lead finish does 71256L35YGI use?

The 71256L35YGI uses a 28-pin Small Outline J-Lead (SOJ) package with 300-mil body width (JEDEC MO-012, Renesas code PJG28). Its leads feature matte tin (Sn) finish compliant with RoHS and lead-free assembly requirements, qualified for standard reflow profiles. The 71256L35YGI's SOJ construction provides mechanical robustness and thermal performance suitable for industrial environments.