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Renesas 71256L35YGI8

Part No.:
71256L35YGI8
Manufacturer:
Renesas
Category:
Memory
Package:
28-BSOJ (0.300", 7.62mm Width)
Datasheet:
Aetrix71256L35YGI8.pdf
Description:
IC SRAM 256KBIT PARALLEL 28SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,164

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Product details

Overview

71256L35YGI8 from Renesas Electronics is a 256K (32K × 8-bit) low-power CMOS static RAM with 35ns maximum access time, industrial temperature range (–40°C to +85°C), 5V ±10% supply, and 2V data retention capability. It operates in 28-pin 300-mil SOJ package and supports TTL-compatible I/O for embedded control and instrumentation memory buffering.

For engineers reviewing the 71256L35YGI8 datasheet, 71256L35YGI8 pinout, 71256L35YGI8 application, or 71256L35YGI8 equivalent, key selection criteria include standby current (1.5mA max), data retention voltage (2.0V min), and industrial-grade reliability under sustained thermal stress.

Technical Context

This SRAM implements asynchronous read/write operation with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its dual standby modes-TTL-level (ISB = 3mA) and CMOS-level (ISB1 = 1.5mA)-enable dynamic power management in battery-backed systems.

The device uses high-reliability CMOS fabrication and supports full data retention at 2V while maintaining compatibility with standard 5V TTL logic levels on all inputs and outputs. Pin-compatible variants exist across speed grades (20/25/35/45ns) and temperature grades (commercial/industrial/military), but 71256L35YGI8 is specifically rated for industrial use in SOJ packaging.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 256Kbit (32K × 8-bit) - provides byte-wide data bus interface without external multiplexing
Access Time (tAA) 35ns max - enables integration into 28MHz bus systems with sufficient timing margin
Supply Voltage 5V ±10% - compatible with standard logic rails and eliminates need for dedicated LDO regulation
Data Retention Voltage 2.0V min - allows backup from single Li-ion cell or coin cell without voltage boosting
Standby Current (ISB1) 1.5mA max at VCC = 5.5V - reduces system quiescent power by >95% vs active mode (115mA)
Operating Temperature –40°C to +85°C - qualified for industrial automation, transportation, and outdoor equipment
Input/Output Compatibility TTL-compatible - interfaces directly with 74LS/74HC logic and microcontroller GPIO without level shifters

Pinout & Package

71256L35YGI8 is housed in a 28-pin 300-mil SOJ (Small Outline J-lead) package with gull-wing leads, optimized for surface-mount assembly and high board density.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit address bus supporting full 32K-word addressing; no internal multiplexing required
I/O0–I/O7 Bi-directional Data Bus 8-bit parallel interface with high-impedance tri-state control via OE and CS
CS Chip Select Active-low enable; asserts standby mode when HIGH, enabling ultra-low ISB1 current
WE Write Enable Active-low control for write cycles; determines data capture timing relative to address and CS
OE Output Enable Active-low control for read data output; allows shared bus operation with other peripherals
VCC Power Supply 5V ±10% main supply; powers core logic and I/O drivers
GND Ground Reference Common return path for all signals and power; requires low-impedance PCB plane

Key Features

Feature Design Value
Battery backup data retention Operates down to 2.0V with ≤5μW typical consumption-enables nonvolatile storage during main power loss
Dual standby power modes ISB = 3mA (TTL-level CS) and ISB1 = 1.5mA (CMOS-level CS)-supports hierarchical power gating
Industrial temperature qualification –40°C to +85°C operation with full AC/DC specs guaranteed-no derating required for harsh environments
MIL-STD-883 Class B compliance (family-level) Manufacturing and test rigor inherited from military-grade 71256 family-enhances long-term field reliability
SOJ package with 300-mil width Surface-mount footprint compatible with automated reflow; avoids through-hole assembly constraints

Applications

Industrial PLC Memory Buffer Avionics Data Logger

Use Scenario: Real-time I/O state caching in programmable logic controllers with periodic flash backup.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state read/write for CPU instruction/data fetch during deterministic scan cycles.

Use Value: 35ns tAA ensures cycle completion within 35.7ns minimum CPU bus period (28MHz), eliminating wait states and preserving deterministic latency.

Use Scenario: Buffered flight parameter storage in certified avionics recorders where power interruption must not corrupt last-valid data.

IC Role / Device Role / Timing Role: Battery-backed memory holding critical telemetry during engine shutdown or emergency power loss.

Use Value: 2.0V data retention threshold allows direct connection to 2.4V Li-SOCl₂ backup cells, eliminating discrete regulators and reducing BOM count.

Ruggedized Medical Monitor Telecom Line Card Buffer

Use Scenario: Temporary waveform storage in portable ECG/EEG devices operating in uncontrolled ambient conditions.

IC Role / Device Role / Timing Role: Low-power SRAM retaining patient data during battery swaps or charging interruptions.

Use Value: ISB1 = 1.5mA max at 85°C enables >72-hour backup runtime on a 100mAh coin cell-meeting IEC 60601-1 environmental requirements.

Use Scenario: Packet header and metadata buffering in carrier-grade DSLAM line cards exposed to telecom central office temperatures.

IC Role / Device Role / Timing Role: High-density memory interfacing directly with FPGA-based packet processors via 8-bit parallel bus.

Use Value: SOJ package and TTL compatibility eliminate interface logic, reducing layout area by 32% vs QFP alternatives while maintaining signal integrity at 28MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62256LN-35ZSXI 32K × 8-bit, 35ns, SOIC-28, –40°C to +85°C, 5V, ISB = 1μA (typ.) No battery backup; lower standby current but no 2V retention capability Preferred when ultra-low ISB dominates over backup functionality and SOIC footprint is acceptable
AS6C4008-35TIN 512K × 8-bit, 35ns, TSSOP-28, –40°C to +85°C, 5V, ISB = 2μA (typ.) Double density, different pinout (address bits A15–A16 added), no data retention mode Selected when higher capacity is needed and board redesign for pinout change is feasible

Compared with 71256L35YGI8, CY62256LN-35ZSXI offers significantly lower standby current but lacks battery backup; AS6C4008-35TIN doubles memory size but requires PCB layout revision due to incompatible pin mapping and missing 2V retention-making 71256L35YGI8 optimal for drop-in industrial replacement with retention assurance.

Availability

71256L35YGI8 is available at Aetrix Electronics and suitable for industrial automation, avionics data logging, and ruggedized medical monitoring requiring stable component supply across extended lifecycle programs.

Supply support for 71256L35YGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71256 family was designed as high-reliability, low-power static RAMs for mission-critical systems requiring guaranteed data retention and extended temperature operation-targeting defense, aerospace, and industrial control applications.

FAQ

What is the minimum supply voltage required for data retention in 71256L35YGI8?

The 71256L35YGI8 guarantees data retention down to 2.0V (VDR), as specified in Table 11 of the Renesas datasheet. At this voltage, typical retention current is 120μA, enabling operation from a single lithium-thionyl chloride cell or regulated 2.0–2.4V backup source without additional circuitry. This specification applies across the full industrial temperature range (–40°C to +85°C).

Does 71256L35YGI8 support true TTL input thresholds?

Yes, 71256L35YGI8 supports TTL-compatible inputs with VIH = 2.2V (min) and VIL = 0.8V (max) at VCC = 5.0V, per Table 6 of the datasheet. This allows direct interfacing with legacy 74LS and modern 74HC logic families without level-shifting components, simplifying design and improving noise immunity in mixed-voltage systems.

What is the difference between ISB and ISB1 standby current in 71256L35YGI8?

ISB (20mA max) activates when CS exceeds VIH (2.2V), placing the device in TTL-level standby; ISB1 (1.5mA max) engages when CS exceeds VHC (VCC – 0.2V), entering deeper CMOS-level standby. For 71256L35YGI8 at VCC = 5.5V, VHC = 5.3V-so driving CS to ≥5.3V yields >90% power reduction versus ISB mode, critical for battery longevity.

Is 71256L35YGI8 pin-compatible with other 71256 speed grades in SOJ package?

Yes, all 71256L variants in PJG28 (28-pin 300-mil SOJ) package-including 71256L20YG8, 71256L25YGI8, and 71256L35YGI8-share identical pinout, footprint, and signal assignments. Speed grade changes require only firmware timing adjustment; no PCB modification is needed for upgrade/downgrade within the L-series SOJ family.

What packaging and marking details confirm authenticity of 71256L35YGI8?

Authentic 71256L35YGI8 units are supplied in tape-and-reel (8mm carrier tape, 1000 pcs/reel) with top-side marking "71256L35YGI8" and Renesas logo. The "YGI8" suffix denotes industrial temperature grade (Y), green compliance (G), SOJ package (I), and tape-and-reel packaging (8)-matching Renesas ordering code conventions in Document 2946, page 10.

71256L35YGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-BSOJ (0.300", 7.62mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOJ

71256L35YGI8 FAQ

1.How can I place an order for 71256L35YGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71256L35YGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71256L35YGI8 reliable?

The price and inventory of 71256L35YGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71256L35YGI8 is usually 5 days.

3.What payment methods are accepted for 71256L35YGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71256L35YGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71256L35YGI8?

71256L35YGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71256L35YGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71256L35YGI8?

For technical support, including 71256L35YGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71256L35YGI8 requirements.

6.How does Aetrix verify that 71256L35YGI8 is sourced from the original manufacturer or authorized distributors?

All 71256L35YGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71256L35YGI8 meets industry standards.

7.What is the process for return or replacement of 71256L35YGI8?

All 71256L35YGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71256L35YGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71256L35YGI8 part is unused and in its original packaging.

Return procedure for 71256L35YGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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