Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71256SA25YG8

Part No.:
71256SA25YG8
Manufacturer:
Renesas
Category:
Memory
Package:
28-BSOJ (0.300", 7.62mm Width)
Datasheet:
Aetrix71256SA25YG8.pdf
Description:
IC SRAM 256KBIT PARALLEL 28SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,431

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71256SA25YG8 from Renesas Electronics is a 32K × 8-bit (256 Kbit) high-speed CMOS static RAM with industrial temperature range (–40°C to +85°C), 25 ns read/write cycle time, TTL-compatible I/O, and single 5 V supply operation. It serves as a non-refreshing, asynchronous memory buffer in embedded controllers, instrumentation data loggers, and legacy industrial PLCs requiring deterministic access timing.

For engineers reviewing the 71256SA25YG8 datasheet, 71256SA25YG8 pinout, 71256SA25YG8 application, or 71256SA25YG8 equivalent, this device delivers verified 25 ns access under industrial conditions, low-standby current (40 mA ISB), and SOJ-28 packaging compatible with space-constrained board layouts - critical for retrofitting aging systems with extended lifecycle requirements.

Technical Context

The 71256SA25YG8 implements fully static asynchronous circuitry with no clocks or refresh cycles required. Its control logic supports independent chip select (CS) and output enable (OE) pins, enabling flexible bus arbitration and partial-memory disable without affecting adjacent devices.

It features bidirectional TTL-compatible I/O lines (I/O₀–I/O₇), 15 address inputs (A₀–A₁₄), and operates across VCC = 4.5 V to 5.5 V. Standby current drops to 15 mA (ISB1) when CS is held at CMOS-high level, supporting low-power sleep modes in battery-backed systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 32K × 8-bit (262,144 bits); supports byte-wide parallel data transfers without multiplexing.
Access Time (tAA) 25 ns max; guarantees deterministic read latency for real-time control loops with fixed-cycle execution.
Supply Voltage 4.5 V to 5.5 V; compatible with standard 5 V TTL/CMOS logic rails without regulation overhead.
Operating Temperature –40°C to +85°C; qualified for industrial environments including factory automation and outdoor telemetry.
Standby Current (ISB) 40 mA max (TTL-level CS deassertion); enables power budgeting in always-on monitoring nodes.
I/O Compatibility TTL input thresholds (VIL ≤ 0.8 V, VIH ≥ 2.2 V) and output drive (±4 mA/8 mA); interoperable with legacy microcontrollers and FPGAs.
Package 28-pin 300-mil Plastic SOJ (PJG28); surface-mount compatible with reflow profiles per J-STD-020.

Pinout & Package

71256SA25YG8 is housed in a 28-pin 300-mil Plastic SOJ (PJG28) package with gull-wing leads, designed for high-reliability industrial PCB assembly and thermal cycling resilience.

Pin/Terminal Circuit Role Design Meaning
A₀–A₁₄ Address Inputs 15-bit address bus; selects one of 32,768 memory locations (2¹⁵ = 32K).
I/O₀–I/O₇ Bidirectional Data Bus 8-bit parallel interface; tri-states during read hold or write setup to prevent bus contention.
CS Chip Select Active-low enable; disables all outputs and reduces ICC to ISB when high, isolating device from bus.
OE Output Enable Active-low control; gates output drivers independently of CS, allowing shared bus timing optimization.
WE Write Enable Active-low signal; initiates write cycle on falling edge concurrent with CS low; controls data latching timing.
VCC Power Supply +5 V supply pin; decoupling capacitor placement near this pin is mandatory for noise immunity.
GND Ground Reference Signal and power ground return; requires low-inductance connection to minimize switching noise coupling.

Key Features

Feature Design Value
Industrial Temperature Range Rated for –40°C to +85°C operation; validated across full range for memory retention and timing compliance.
Low-Power Standby Mode ISB1 = 15 mA at CMOS-level CS deassertion; enables energy-efficient sleep states in portable or remote sensors.
Asynchronous Static Architecture No clock, no refresh, no wait states; simplifies timing design and eliminates DRAM controller overhead.
TTL-Compatible Interface Direct connection to 5 V microcontrollers (e.g., Intel 80Cxx, Motorola 68HCxx) without level-shifting circuitry.
Green Packaging Option RoHS-compliant, lead-free SOJ package (per ordering code suffix 'G'); meets environmental compliance for global shipments.

Applications

Industrial Data Acquisition Legacy Microcontroller Buffering

Use Scenario: High-speed sampling of analog sensor arrays in programmable logic controllers (PLCs), where raw data must be stored temporarily before serial upload.

IC Role / Device Role / Timing Role: Asynchronous SRAM buffer staging sampled values; provides zero-wait-state storage aligned to fixed 25 ns CPU bus cycles.

Use Value: Eliminates DMA controller dependency and avoids FIFO overflow during burst capture, ensuring deterministic data integrity over temperature extremes.

Use Scenario: Extending onboard memory for 8-bit/16-bit MCUs (e.g., Zilog Z8, NEC V30) in retro-style industrial HMIs with limited internal RAM.

IC Role / Device Role / Timing Role: External program/data memory mapped into MCU address space via ALE-controlled latch; accessed using standard MOVX or LD instructions.

Use Value: Enables firmware expansion beyond on-chip limits while preserving timing compatibility with legacy 5 V bus architectures.

Telemetry Edge Node Cache Test Equipment Pattern Memory

Use Scenario: Local buffering of GPS/IMU telemetry packets in solar-powered field gateways operating intermittently between transmission windows.

IC Role / Device Role / Timing Role: Low-ISB1 standby memory holding compressed payloads; powered only during active packet assembly or RF transmit bursts.

Use Value: Reduces average system power by >65% versus active DRAM, extending battery life in unattended deployments.

Use Scenario: Storing stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing, requiring repeatable, jitter-free readout.

IC Role / Device Role / Timing Role: Deterministic-access pattern store synchronized to tester clock edges; accessed via parallel address strobes with <25 ns setup/hold margins.

Use Value: Guarantees sub-cycle timing repeatability across temperature, eliminating pattern corruption during thermal soak testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62256LL-70ZC Same 32K × 8 organization, but 70 ns access; commercial-only (0°C to +70°C); 28-pin SOJ package. Limited to benign environments; unsuitable for industrial thermal cycling or extended temperature validation. Select only if cost sensitivity outweighs temperature robustness and timing performance.
AS6C4008-25ZIN 32K × 8 SRAM with 25 ns access; industrial grade (–40°C to +85°C); 28-pin SOJ; lower ISB (5 mA typical). Superior standby efficiency but lacks Renesas' long-term obsolescence support and legacy footprint alignment. Prefer for new designs prioritizing ultra-low power; verify pinout compatibility (A14/A13 order differs).

Compared with CY62256LL-70ZC and AS6C4008-25ZIN, the 71256SA25YG8 uniquely balances industrial qualification, proven 25 ns timing margin, and direct drop-in compatibility with legacy Renesas/IDT-based systems - making it the optimal choice for maintenance and upgrade programs.

Availability

71256SA25YG8 is available at Aetrix Electronics and suitable for industrial data acquisition, legacy microcontroller buffering, telemetry edge node caching, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for 71256SA25YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71256SA25YG8 belongs to Renesas' legacy high-reliability SRAM product line, originally developed by IDT and optimized for deterministic, low-maintenance memory in mission-critical industrial control and instrumentation systems.

FAQ

What is the operating voltage range for the 71256SA25YG8?

The 71256SA25YG8 operates from 4.5 V to 5.5 V DC. This 5 V nominal supply range ensures compatibility with legacy TTL and CMOS logic families without external regulation. The device maintains full AC/DC specifications across this window, including guaranteed 25 ns access time and 40 mA ISB at VCC = 5.5 V. Operation outside this range may cause data corruption or parametric failure.

Does the 71256SA25YG8 require a clock or refresh signal?

No, the 71256SA25YG8 uses fully static CMOS architecture and requires neither a clock nor periodic refresh. All timing is controlled asynchronously via CS, OE, and WE signals. This eliminates timing controller complexity and makes the 71256SA25YG8 ideal for simple microcontroller interfaces and systems where deterministic, zero-latency access is essential - such as real-time control loops or burst-mode data capture.

What is the meaning of the 'YG8' suffix in 71256SA25YG8?

The 'YG8' suffix in 71256SA25YG8 indicates a 28-pin 300-mil Plastic SOJ package (PJG28) supplied in tape-and-reel format ('8'), with industrial temperature grade ('I' implied by YG designation in Renesas' ordering matrix). This matches the official Renesas ordering information table, confirming the part is qualified for –40°C to +85°C operation and optimized for automated SMT assembly.

How does the 71256SA25YG8 handle bus contention during read/write transitions?

The 71256SA25YG8 prevents bus contention through three mechanisms: (1) OE-controlled output enable/disable with 11 ns tOHZ, (2) CS-gated tri-state outputs during deselect, and (3) bidirectional I/O lines that enter high-impedance state within 4 ns of OE or CS deassertion (tOLZ/tCHZ). These ensure clean bus release before subsequent device access - critical in multi-SRAM systems like memory-mapped peripherals in industrial controllers.

Is the 71256SA25YG8 RoHS-compliant and lead-free?

Yes, the 71256SA25YG8 is a green, RoHS-compliant device with lead-free terminations, as confirmed by Renesas' ordering documentation (suffix 'G') and "Restricted hazardous substance device" labeling in the datasheet. It meets JEDEC J-STD-020 moisture sensitivity level 3 and supports standard Pb-free reflow profiles, making it suitable for environmentally regulated industrial and medical applications.

71256SA25YG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-BSOJ (0.300", 7.62mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOJ

71256SA25YG8 FAQ

1.How can I place an order for 71256SA25YG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71256SA25YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71256SA25YG8 reliable?

The price and inventory of 71256SA25YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71256SA25YG8 is usually 5 days.

3.What payment methods are accepted for 71256SA25YG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71256SA25YG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71256SA25YG8?

71256SA25YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71256SA25YG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71256SA25YG8?

For technical support, including 71256SA25YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71256SA25YG8 requirements.

6.How does Aetrix verify that 71256SA25YG8 is sourced from the original manufacturer or authorized distributors?

All 71256SA25YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71256SA25YG8 meets industry standards.

7.What is the process for return or replacement of 71256SA25YG8?

All 71256SA25YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71256SA25YG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71256SA25YG8 part is unused and in its original packaging.

Return procedure for 71256SA25YG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71256SA25YG8 Tags

  • 71256SA25YG8
  • 71256SA25YG8 PDF
  • 71256SA25YG8 Datasheet
  • 71256SA25YG8 Specifications
  • 71256SA25YG8 Images
  • Renesas
  • Renesas 71256SA25YG8
  • Buy 71256SA25YG8
  • 71256SA25YG8 Price
  • 71256SA25YG8 Distributor
  • 71256SA25YG8 Supplier
  • 71256SA25YG8 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER