Renesas 7130LA35PDG

Overview

7130LA35PDG from IDT (Integrated Device Technology) is a high-speed 1K × 8 dual-port static RAM configured as a MASTER device with on-chip arbitration logic, 35ns maximum read cycle time, 1mW typical standby power, and battery backup data retention down to 2V. It enables simultaneous independent access from left and right ports in real-time inter-processor communication systems.

For engineers reviewing the 7130LA35PDG datasheet, 7130LA35PDG pinout, 7130LA35PDG application, or 7130LA35PDG equivalent, this page delivers verified timing parameters, port arbitration behavior, BUSY/INT flag operation, and drop-in replacement guidance for industrial embedded memory subsystems requiring deterministic contention resolution.

Technical Context

The 7130LA35PDG implements fully asynchronous dual-port operation with separate address, control, and I/O buses per port. Its on-chip arbitration logic resolves port contention via BUSY flag assertion-BUSYL and BUSYR are open-drain outputs requiring external pull-ups, and tAPS = 5ns ensures priority setup before address match.

It supports R/W-controlled and CE-controlled write cycles, with tWC = 35ns, tWP = 25ns, and tBDD = 35ns (BUSY disable to valid data). The LA variant provides 2V data retention with ICCDR ≤ 4000µA (military/industrial) and ISB3 = 0.2mA full standby current under CMOS-level inputs.

Key Specifications

Pinout & Package

7130LA35PDG is packaged in a 48-pin Plastic Dual In-line Package (PDG48), measuring approximately 0.55 in × 0.61 in × 0.19 in, with through-hole mounting and industry-standard DIP footprint compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C024AV-35AXC and IDT7140LA35PDG, the 7130LA35PDG uniquely integrates arbitration logic and open-drain BUSY/INT outputs-enabling self-contained, deterministic dual-port coordination without external components or voltage translation.

Availability

7130LA35PDG is available at Aetrix Electronics and suitable for real-time inter-processor communication, industrial PLC I/O mapping, digital signal processing buffers, and redundant control system memory requiring stable component supply across extended temperature ranges.

Supply support for 7130LA35PDG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions, now part of Renesas Electronics.

The IDT7130/7140 family was designed specifically for deterministic, low-latency dual-port memory applications in industrial automation, military systems, and real-time embedded control-emphasizing on-chip arbitration, battery backup, and robust 5V operation.

FAQ

What is the function of BUSYL and BUSYR on the 7130LA35PDG?

BUSYL and BUSYR are open-drain arbitration status outputs on the 7130LA35PDG. When asserted low, they indicate that the corresponding port's access is blocked due to address contention with the opposite port. Per datasheet Note 1, each requires an external pull-up resistor. These signals enable hardware-level synchronization without software intervention, and their timing (tBAA = 20ns max) ensures rapid conflict detection during simultaneous reads/writes.

Does the 7130LA35PDG support true simultaneous read operations from both ports?

Yes-the 7130LA35PDG supports fully asynchronous, simultaneous read operations from left and right ports with no timing dependency between them. BUSY flags remain de-asserted during concurrent reads, and valid data appears within tAA = 35ns after address stabilization on each port independently. This behavior is confirmed in Truth Table I and Timing Waveform No. 1, where R/W = VIH and OE = VIL on both sides.

How does the 7130LA35PDG achieve 2V data retention, and what is the maximum current draw in that mode?

The 7130LA35PDG achieves 2V data retention via optimized CMOS cell design and low-leakage process technology. In data retention mode (VCC = 2.0V, CE > VCC − 0.2V), ICCDR is guaranteed ≤ 4000µA for military/industrial grades and ≤ 1500µA for commercial grade-verified per Table 7. This enables multi-hour retention on small backup batteries without external regulators or charge pumps.

Can the 7130LA35PDG be used without external pull-up resistors on BUSY and INT pins?

No-BUSYL, BUSYR, INTL, and INTR are explicitly defined as open-drain outputs in the datasheet (Notes 1 and 2). Without external pull-up resistors, these signals cannot drive HIGH and will remain indeterminate or float, causing unreliable arbitration and interrupt signaling. Recommended pull-up values are 1.2kΩ to 4.7kΩ to VCC, per typical application circuits in Figures 3 and 12–17.

What is the difference between the 7130LA35PDG and the 7140LA35PDG in a MASTER/SLAVE configuration?

The 7130LA35PDG is the MASTER device with on-chip arbitration logic and BUSY outputs; the 7140LA35PDG is the SLAVE with BUSY inputs only and no arbitration circuitry. In a 16-bit system, one 7130LA35PDG controls two 7140LA35PDG units-expanding data width while maintaining full-speed operation. The 7140LA35PDG cannot operate standalone in arbitration-critical roles and must be paired with a 7130-series MASTER.