Renesas 71342LA35J8

Overview

IDT71342LA35J8 from Integrated Device Technology is a high-speed 4K × 8 dual-port static RAM with integrated hardware semaphore logic, operating at 35 ns max access time (industrial grade), supporting independent asynchronous read/write on left and right ports, and enabling interprocessor resource arbitration in real-time embedded systems such as industrial motion controllers and avionics data concentrators.

For engineers reviewing the IDT71342LA35J8 datasheet, IDT71342LA35J8 pinout, IDT71342LA35J8 application, or IDT71342LA35J8 equivalent, this page delivers verified technical context, exact pin-to-function mapping for the 52-pin PLCC package, confirmed low-power standby behavior (1 mW typ.), battery-backed data retention at 2 V, and two validated alternative dual-port SRAMs with documented timing and interface differences.

Technical Context

The IDT71342LA35J8 implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port-no shared timing constraints between left (L) and right (R) sides. Its on-chip semaphore logic block consists of eight independent latches accessible via A0–A2 under SEM = VIL, with active-low token signaling and automatic contention resolution on simultaneous write attempts.

It supports TTL-compatible 5 V ±10% operation across –40°C to +85°C, features automatic power-down controlled jointly by CE and SEM pins, and provides distinct access paths: SRAM space (CE = VIL, SEM = VIH) and semaphore register space (CE = VIH, SEM = VIL), each with dedicated timing parameters (tAA/tSAA, tWC/tSWR).

Key Specifications

Pinout & Package

Package: 52-pin Plastic Leaded Chip Carrier (PLCC), body size ≈ 20.0 mm × 20.0 mm × 4.3 mm, lead pitch 0.635 mm, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM with semaphore applications.

Compared with CY7C024AV-35AXC and AS7C34098B-35JCIN, the IDT71342LA35J8 uniquely combines industrial-grade 35 ns timing, native 5 V operation, and self-contained semaphore logic - eliminating voltage translation, external logic, and backup circuitry while preserving deterministic interprocessor coordination.

Availability

IDT71342LA35J8 is available at Aetrix Electronics and suitable for industrial motion controllers, avionics data concentrators, medical imaging subsystems, test equipment pattern generators, and real-time dual-CPU embedded systems requiring stable component supply across extended product lifecycles.

Supply support for IDT71342LA35J8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for demanding real-time applications.

IDT71342LA35J8 belongs to IDT's dual-port SRAM product line, engineered specifically for deterministic interprocessor communication in safety-critical and latency-sensitive embedded systems.

FAQ

What is the guaranteed maximum access time for IDT71342LA35J8 over its full industrial temperature range?

IDT71342LA35J8 guarantees a maximum access time of 35 ns across the full industrial temperature range of –40°C to +85°C, as specified in Table 09a of the official datasheet. This value applies to both tAA (address access) and tACE (chip enable access) under VCC = 5.0 V ±10%, and is validated for the LA speed grade with industrial qualification. The 35 ns rating distinguishes it from faster commercial-only variants (e.g., 20 ns or 25 ns) and slower grades (e.g., 45 ns).

Does IDT71342LA35J8 support true battery backup, and what is the minimum retention voltage?

Yes, IDT71342LA35J8 supports true battery backup with guaranteed data retention down to 2.0 V (VDR = 2.0 V min), as confirmed in Table 07 of the datasheet. This feature is exclusive to LA versions (not SA). At VCC = 2 V and TA = +25°C, typical retention current is 100 µA, enabling long-term storage using standard coin-cell batteries without external regulators or charge pumps.

How many semaphore flags does IDT71342LA35J8 provide, and how are they accessed?

IDT71342LA35J8 provides exactly eight hardware semaphore flags, accessed exclusively via address lines A0–A2 when SEM = VIL and CE = VIH. Only I/O0 is used for writing semaphore values (0 = request token, 1 = release), and all eight I/O lines reflect the same flag state during read. No other address bits (A3–A11) affect semaphore access - ensuring isolation from main memory space.

What package type is used for IDT71342LA35J8, and are all power and ground pins required?

IDT71342LA35J8 is supplied in a 52-pin PLCC package (package code PLG52), as shown in Figure 2 of the datasheet. All VCC pins (pins 2, 47, 48) must be connected to the 5 V supply, and all GND pins (pins 27, 46) must be connected to system ground - per Note 1 and Note 2 in the Pin Configurations section. Failure to connect all power/ground pins may cause excessive ICC or functional instability.

Can both ports of IDT71342LA35J8 perform simultaneous read and write operations on the same memory location?

No - simultaneous read and write to the same non-semaphore memory location causes undefined data output and potential bus contention, as explicitly stated in the Functional Description (page 11). While ports operate fully asynchronously, concurrent access to identical addresses violates the device's internal arbitration and is prohibited. Semaphore locations are protected against such conflicts, but standard SRAM cells require software-enforced mutual exclusion for safe dual-port use.