Renesas 7134LA20JG8

Overview

7134LA20JG8 from Renesas Electronics is a high-speed 4K × 8 dual-port static RAM IC designed for asynchronous, contention-tolerant memory interfacing in real-time systems. It delivers 20 ns read cycle time (max), 5V ±10% single-supply operation, and industrial-grade temperature range (–40°C to +85°C), enabling use in avionics data buffers, military radar frame stores, and industrial PLC dual-CPU coherency modules.

For engineers reviewing the 7134LA20JG8 datasheet, 7134LA20JG8 pinout, 7134LA20JG8 application, or 7134LA20JG8 equivalent, key selection criteria include dual-port arbitration-free access, battery-backed data retention at 2V, ultra-low 1 µA full-standby current (ISB3), and PLCC-52 package compatibility with legacy board layouts.

Technical Context

The 7134LA20JG8 implements fully independent left/right ports with separate address decoders, control logic (CEL/CER, R/WL/R/WR, OEL/OER), and bidirectional I/O buses-enabling simultaneous, asynchronous reads/writes without on-chip arbitration. Its CMOS-based architecture supports TTL-compatible signaling and automatic power-down per port via chip enable.

Unlike standard SRAMs, it features dedicated data retention mode (LA-only) activated when V_CC drops to ≥2V, sustaining stored data with ≤4 mA retention current across –40°C to +85°C. Timing is defined by t_RC, t_AA, t_ACE, and t_AOE, all guaranteed at 20 ns max under commercial/industrial conditions.

Key Specifications

Pinout & Package

7134LA20JG8 is housed in a 52-pin Plastic Leaded Chip Carrier (PLCC) package with J-lead configuration, body size ≈ 0.75 in × 0.75 in × 0.17 in. Pin 1 is marked by index notch; pins are arranged in counter-clockwise order starting from top-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1354V25-20BGXI and AS7C34098B-20JCIN, the 7134LA20JG8 uniquely combines 5V TTL compatibility, sub-microamp ISB3, and 2V data retention-making it irreplaceable in legacy-mandated, battery-backed, or high-reliability dual-CPU architectures.

Availability

7134LA20JG8 is available at Aetrix Electronics and suitable for avionics data buffering, industrial PLC dual-CPU coherency, and military radar frame storage requiring stable component supply across extended product lifecycles.

Supply support for 7134LA20JG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The IDT7134 family-acquired from Integrated Device Technology-was engineered for deterministic, arbitration-free memory sharing in safety-critical dual-processor systems demanding zero-wait-state performance and fail-safe data persistence.

FAQ

What is the maximum operating speed of the 7134LA20JG8?

The 7134LA20JG8 guarantees a 20 ns maximum read cycle time (t_RC) under commercial and industrial temperature conditions. This corresponds to a theoretical maximum throughput of 50 MHz per port when operated asynchronously. The 20 ns rating applies specifically to the LA (low-power) variant in PLCC-52 packaging and is validated across –40°C to +85°C ambient temperature with 5.0 V ±10% supply voltage. Performance remains stable without derating in typical industrial environments.

Does the 7134LA20JG8 support battery backup operation?

Yes, the 7134LA20JG8 supports battery backup data retention-a feature exclusive to LA-series devices. When V_CC drops to 2.0 V or higher, the device retains stored data with typical current draw of 100 µA (max 4 mA) across its full industrial temperature range. This mode requires no external circuitry beyond a 2–5.5 V backup source connected to V_CC, and is confirmed in Renesas datasheet Table 7 (t_CDR, V_DR, ICCDR). The 7134LA20JG8 does not require special enable signals to enter retention mode-it activates automatically upon V_CC decay.

What package type is used for the 7134LA20JG8?

The 7134LA20JG8 uses a 52-pin Plastic Leaded Chip Carrier (PLCC) package, designated PLG52 in Renesas ordering nomenclature. Its dimensions are approximately 0.75 in × 0.75 in × 0.17 in, with J-lead construction and an index notch marking Pin 1. This surface-mount package supports infrared reflow soldering and is compatible with standard PLCC sockets for prototyping or field repair. Pinout matches the generic IDT7134 PLCC layout shown in Figure 2720 drw 03 of the official datasheet.

How does the 7134LA20JG8 handle simultaneous access to the same memory location from both ports?

The 7134LA20JG8 does not include internal arbitration logic-simultaneous access to the same address from left and right ports may result in data contention or undefined output states. System-level arbitration (e.g., external semaphores or priority encoders) must be implemented by the user to ensure data integrity. The device's truth table (Table 11) explicitly defines behavior only under non-contention conditions. Renesas documentation states: "It is the user's responsibility to ensure data integrity when simultaneously accessing the same memory location from both ports." No hardware resolution or error reporting is provided within the 7134LA20JG8.

What are the key differences between the 7134LA20JG8 and the SA-series variant?

The 7134LA20JG8 differs from SA-series parts (e.g., 7134SA20JG8) primarily in standby power and data retention capability. The LA version delivers 1 µA typical full-standby current (ISB3) versus 15 µA for SA, and supports 2V data retention-features absent in SA devices. Both share identical 20 ns speed grade, 4K × 8 organization, and PLCC-52 packaging. Electrical characteristics like t_AA, t_ACE, and VOH/VOL are functionally equivalent; the LA's lower leakage stems from optimized CMOS process tuning, not architectural changes.