Renesas 7134LA20P

Overview

IDT7134LA20P from Integrated Device Technology (IDT) is a high-speed, 4K × 8-bit dual-port static RAM with independent left/right asynchronous ports, 20 ns read cycle time, 1 mW standby power, and battery-backed data retention down to 2 V - used in real-time interprocessor communication, video frame buffers, and military avionics systems requiring zero-wait-state memory arbitration.

For engineers reviewing the IDT7134LA20P datasheet, IDT7134LA20P pinout, IDT7134LA20P application, or IDT7134LA20P equivalent, this page delivers verified electrical specs, validated dual-port timing behavior, confirmed 48-pin plastic DIP package mapping, and two field-proven alternative SRAMs for contention-aware system design.

Technical Context

The IDT7134LA20P implements fully asynchronous dual-port architecture with separate address, control, and bidirectional I/O buses per port - enabling simultaneous read/write access without on-chip arbitration logic. Its CE-controlled automatic power-down supports TTL-compatible 5 V ±10% operation and guarantees data retention at 2 V during battery backup.

Each port features independent R/W, CE, and OE controls with defined contention behavior per Truth Table I; timing parameters including tRC = 20 ns, tAA = 20 ns, and tAOE = 15 ns are specified over commercial temperature range (0°C to +70°C), with full CMOS-level standby current ISB3 ≤ 0.2 mA (typ.) and ISB4 ≤ 100 µA (typ.) under VCC − 0.2 V CE bias.

Key Specifications

Pinout & Package

48-pin plastic DIP (P48-1) package with 0.600" body width, 0.100" lead pitch, and dual-row through-hole termination. Pin 1 marked by notch or dot; all VCC pins require local decoupling, all GND pins must be connected to common ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C134-20JC and AS7C34096B-20JIN, the IDT7134LA20P uniquely combines 20 ns performance, 5 V compatibility, and guaranteed 2 V battery retention in a 48-pin DIP - making it irreplaceable in legacy military and industrial systems requiring drop-in reliability without voltage translation or auxiliary ICs.

Availability

IDT7134LA20P is available at Aetrix Electronics and suitable for real-time interprocessor communication, video frame buffering, and military avionics data logging requiring stable component supply across extended product lifecycles.

Supply support for IDT7134LA20P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions - acquired by Renesas Electronics in 2019.

The IDT7134 family was designed for high-reliability embedded systems requiring deterministic dual-port memory access without arbitration overhead - targeting aerospace, defense, and industrial automation markets.

FAQ

What is the maximum operating frequency supported by the IDT7134LA20P?

The IDT7134LA20P supports a maximum read cycle rate of 50 MHz, derived from its 20 ns read cycle time (tRC). This timing is guaranteed over the commercial temperature range (0°C to +70°C) with VCC = 5.0 V ±10%. Write cycle time (tWC) is also 20 ns, enabling symmetrical high-speed bidirectional data transfer. The device does not include internal clock circuitry - all timing is controlled by external CE, OE, and R/W signals.

Does the IDT7134LA20P support true simultaneous read/write operations on both ports?

Yes, the IDT7134LA20P supports fully independent asynchronous access: the left port can perform a read while the right port executes a write, or vice versa. However, simultaneous access to the same memory location from both ports results in undefined data - external arbitration logic or software protocol must prevent contention. The device provides no built-in semaphore or bus-grant mechanism.

What is the minimum supply voltage required to retain data in the IDT7134LA20P during power loss?

The IDT7134LA20P guarantees data retention down to 2.0 V DC on VCC, as specified in Table 7 (tCDR and VDR parameters). This applies only to the LA variant and is validated over all temperature ranges. At 2 V, typical data retention current (ICCDR) is 100 µA (commercial) or 100 µA (military/industrial), enabling long-term storage using small coin-cell batteries without additional regulation.

Is the IDT7134LA20P pin-compatible with other speed grades in the IDT7134LA family?

Yes, all IDT7134LA variants - including IDT7134LA20P, IDT7134LA25P, and IDT7134LA35P - share identical 48-pin plastic DIP (P48-1) pinout and electrical interface. Speed grade differences affect only AC timing parameters (e.g., tRC, tAA); DC characteristics, pin functions, and package dimensions remain unchanged. This allows direct replacement for timing margin validation or thermal derating.

How does the standby power consumption of the IDT7134LA20P compare to the SA variant?

The IDT7134LA20P draws 1 mW typical standby power (ISB1 = 40 µA typ. at 5 V), whereas the IDT7134SA20P consumes 5 mW typical (ISB1 = 100 µA typ.). This 5× reduction stems from optimized LA-series CMOS process and deeper sleep modes - critical for battery-operated systems. Both variants maintain identical 700 mW active power (ICC = 140 mA typ.), confirming the LA designation reflects only standby optimization.