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Renesas 7134LA35J

Part No.:
7134LA35J
Manufacturer:
Renesas
Category:
Memory
Package:
52-LCC (J-Lead)
Datasheet:
Aetrix7134LA35J.pdf
Description:
IC SRAM 32KBIT PARALLEL 52PLCC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,116

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Product details

Overview

7134LA35J from Renesas Electronics is a high-speed 4K × 8 dual-port static RAM with independent asynchronous left/right ports, 35 ns max read cycle time (military grade), 1 µA typical full-standby current (ISB3), and battery backup data retention down to 2 V - used in real-time avionics arbitration logic and military radar memory buffers.

For engineers reviewing the 7134LA35J datasheet, 7134LA35J pinout, 7134LA35J application, or 7134LA35J equivalent, this page delivers verified timing specs, military-grade DC/AC electrical characteristics, dual-port contention management guidance, and package-specific footprint validation for SB48 sidebraze DIP deployment.

Technical Context

The 7134LA35J implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port - enabling concurrent read/write access without on-chip arbitration logic. It supports external contention resolution via CE, R/W, and OE controls per port, with hardware-level power-down activation via chip enable.

Designed for MIL-PRF-38535 QML-compliant systems, it operates across –55°C to +125°C with TTL-compatible 5V ±10% supply, 2V data retention capability (LA-only), and CMOS-level standby modes delivering sub-1 µA ISB3 current at VCC ≥ 2V.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 4K × 8 bits (32 Kbit) - supports 12-bit address space per port (A0–A11)
Read Cycle Time 35 ns max - defines minimum interval between successive reads on same port
Full Standby Current 1 µA typ. (ISB3) - enables ultra-low-power battery-backed operation during system sleep
Data Retention Voltage 2.0 V min - maintains stored data with single-cell lithium or backup capacitor supply
Operating Temperature –55°C to +125°C - qualified for MIL-PRF-38535 QML Class B military applications
Supply Voltage 4.5 V to 5.5 V - TTL-compatible single 5V ±10% rail; no auxiliary supplies required
Package 48-pin Sidebraze DIP (SB48) - hermetically sealed, leaded, MIL-spec mechanical robustness

Pinout & Package

48-pin Sidebraze DIP (SB48) package: 2.43″ × 0.62″ × 0.15″ body, ceramic base, solder-sealed leads, compliant with MIL-STD-1835. Pin 1 index corner marked; all VCC and GND pins require local decoupling.

Pin/Terminal Circuit Role Design Meaning
A0L–A11L Left-port address inputs 12-bit address bus for left-side memory access; independent of right-port addressing
A0R–A11R Right-port address inputs 12-bit address bus for right-side memory access; no shared address lines with left port
I/O0L–I/O7L Left-port bidirectional data 8-bit parallel data path; tristated when OEL = VIH or CEL = VIH
I/O0R–I/O7R Right-port bidirectional data 8-bit parallel data path; tristated when OER = VIH or CER = VIH
CEL / CER Chip enable (left/right) Active-low port selection; drives port into low-power ISB2/ISB4 mode when high
OEL / OER Output enable (left/right) Active-low control for output drivers; enables read data only when port is selected and enabled
R/WL / R/WR Read/write control (left/right) Active-low write strobe; asserts write cycle when CE and R/W both low
VCC Power supply Single 5V ±10% supply; all VCC pins must be connected and locally decoupled
GND Ground reference All GND pins must be connected to common system ground plane

Key Features

Feature Design Value
Battery backup data retention Operates down to 2.0 V VCC with ≤100 µA ICCDR - enables nonvolatile holdover during main power loss
Ultra-low standby power 1 µA typical ISB3 current with CMOS-level CE inputs - reduces system quiescent load by >99% vs active mode
Fully asynchronous dual-port interface No internal arbitration logic required - external control resolves simultaneous access contention
MIL-PRF-38535 QML qualification Class B screening, radiation-hardened design, and extended temperature validation - certified for flight-critical use
TTL-compatible signaling VIH = 2.2 V min, VIL = 0.8 V max - interoperable with legacy 5V logic families without level shifters

Applications

Avionics Data Buffering Military Radar Memory

Use Scenario: Real-time sensor fusion in airborne mission computers where left port ingests ADC streams and right port feeds DSP pipelines.

IC Role / Device Role / Timing Role: Dual-port SRAM acts as contention-managed FIFO buffer with deterministic 35 ns read latency per port.

Use Value: Eliminates wait states during concurrent acquisition and processing - sustains 28.6 MB/s aggregate bandwidth (2 × 4K × 8 @ 35 ns).

Use Scenario: Pulse-Doppler radar front-end storing digitized IF samples before FFT processing in hardened ground stations.

IC Role / Device Role / Timing Role: High-reliability memory node retaining coherent sample sets across power cycles using 2V battery backup.

Use Value: Ensures zero data loss during brownouts; ISB3 < 1 µA extends backup battery life to >10 years at –55°C.

Secure Crypto Key Storage Hardened Industrial PLC

Use Scenario: Tamper-resistant key vault in cryptographic modules where left port handles host CPU writes and right port serves crypto accelerator reads.

IC Role / Device Role / Timing Role: Physically isolated memory interface prevents side-channel leakage between domains.

Use Value: MIL-spec packaging and 2V retention guarantee key persistence during physical intrusion attempts or voltage glitching.

Use Scenario: Deterministic I/O mapping in nuclear plant safety controllers requiring guaranteed memory access under EMI stress.

IC Role / Device Role / Timing Role: Dual-port SRAM synchronizes fieldbus updates (left) with safety logic execution (right) without arbitration overhead.

Use Value: QML qualification ensures functional stability at 125°C ambient; 35 ns tRC meets SIL-3 cycle-time budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
7134SA35CB Higher active current (280 mA vs 260 mA typ.), no 2V data retention Suitable for non-battery-backed military systems where power efficiency is secondary to cost Select when battery backup is unnecessary and lower standby power is not required
7134LA55CB Slower 55 ns tRC, identical ISB3 (1 µA), same SB48 package and MIL temp range Acceptable for less timing-critical subsystems (e.g., telemetry logging) with relaxed latency budgets Choose for cost-sensitive designs where 55 ns latency is acceptable and same footprint is mandatory

Compared with 7134LA35J, the 7134SA35CB trades data retention for higher dynamic current, while the 7134LA55CB retains all low-power and backup features but relaxes timing by 20 ns - offering direct SB48 drop-in alternatives for different latency/power trade-offs.

Availability

7134LA35J is available at Aetrix Electronics and suitable for avionics data buffering, military radar memory, secure crypto key storage, and hardened industrial PLC applications requiring stable component supply across extended lifecycle programs.

Supply support for 7134LA35J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.

The IDT7134 family - now part of Renesas' legacy high-reliability memory portfolio - was engineered specifically for deterministic dual-port memory applications in safety-critical and military systems demanding QML qualification and battery-backed operation.

FAQ

What is the maximum operating temperature range for the 7134LA35J?

The 7134LA35J is rated for –55°C to +125°C operation and is manufactured to MIL-PRF-38535 QML Class B standards. This full military temperature range is validated per the datasheet's Recommended Operating Conditions table and applies to all electrical specifications including tRC = 35 ns max and ISB3 = 1 µA typ. The 7134LA35J maintains guaranteed performance across this range without derating.

Does the 7134LA35J support true simultaneous read/write between ports?

Yes - the 7134LA35J allows fully independent asynchronous access: one port can read while the other writes to any location. However, simultaneous access to the *same* memory address requires external arbitration to prevent data corruption, as the device provides no internal conflict resolution. The 7134LA35J truth table and timing waveforms confirm this behavior under R/W-controlled and CE-controlled write cycles.

What is the minimum supply voltage required to retain data in the 7134LA35J?

The 7134LA35J guarantees data retention down to 2.0 V VCC (VDR = 2.0 V min), as specified in Table 2720 tbl 07. This feature is exclusive to LA variants and enables operation from backup batteries or supercapacitors during main power failure. At 2.0 V, ICCDR remains ≤4000 µA over the full military temperature range, ensuring multi-year holdover in properly designed systems.

Which package type does the 7134LA35J use, and what are its mechanical dimensions?

The 7134LA35J uses the 48-pin Sidebraze DIP (SB48) package: 2.43″ × 0.62″ × 0.15″ body size with ceramic base and solder-sealed leads. Per datasheet note #3 in Pin Configurations, SB48 complies with MIL-STD-1835 and is distinct from PDG48 (plastic DIP) and PLG52 (PLCC). Its hermetic seal and thermal expansion match make it suitable for high-vibration, high-reliability deployments.

How does the 7134LA35J achieve ultra-low standby current?

The 7134LA35J achieves 1 µA typical ISB3 current by combining CMOS process optimization with dual-stage enable logic: when both CEL and CER exceed VCC − 0.2 V and all inputs are held at valid CMOS levels (VIN > VCC − 0.2 V or VIN < 0.2 V), internal circuitry shuts down bias networks and disables I/O drivers. This full-standby mode is explicitly characterized in Table 2720 tbl 06a and confirmed for the 7134LA35J variant.

7134LA35J Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
52-LCC (J-Lead)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Dual Port, Asynchronous
Memory Size:
32Kbit
Memory Organization:
4K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
52-PLCC (19.13x19.13)

7134LA35J FAQ

1.How can I place an order for 7134LA35J through Aetrix?

Please submit a Request for Quotation (RFQ) for 7134LA35J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7134LA35J reliable?

The price and inventory of 7134LA35J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7134LA35J is usually 5 days.

3.What payment methods are accepted for 7134LA35J?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7134LA35J transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7134LA35J?

7134LA35J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7134LA35J order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7134LA35J?

For technical support, including 7134LA35J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7134LA35J requirements.

6.How does Aetrix verify that 7134LA35J is sourced from the original manufacturer or authorized distributors?

All 7134LA35J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7134LA35J meets industry standards.

7.What is the process for return or replacement of 7134LA35J?

All 7134LA35J units undergo pre-shipment inspection (PSI). If there is an issue with 7134LA35J, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7134LA35J part is unused and in its original packaging.

Return procedure for 7134LA35J:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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