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Renesas 7134LA45CB
- Part No.:
- 7134LA45CB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-DIP (0.600", 15.24mm)
- Datasheet:
-
7134LA45CB.pdf
- Description:
- IC SRAM 32KBIT PARALLEL SB48
- Quantity:
- Payment:
- Shipping:
Inventory:3,490
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Product details
Overview
7134LA45CB from Renesas Electronics is a high-speed 4K × 8 dual-port static RAM with independent asynchronous left/right ports, 45 ns read cycle time, 1 μA typical standby current (ISB3), and battery backup data retention down to 2 V - designed for real-time inter-processor communication in military-grade avionics and radar signal processing systems.
For engineers reviewing the 7134LA45CB datasheet, 7134LA45CB pinout, 7134LA45CB application, or 7134LA45CB equivalent, this page delivers verified timing specs, military-qualified package details (SB48 sidebraze DIP), dual-port arbitration constraints, and direct alternatives for legacy system sustainment and obsolescence mitigation.
Technical Context
The 7134LA45CB implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port - enabling concurrent read/write access without on-chip arbitration logic. It requires external contention management when both ports access the same memory location simultaneously.
Its low-power LA variant uses CMOS process technology to achieve 1 μA full-standby current (ISB3) at CMOS-level CE inputs and supports 2 V data retention during battery backup - a capability absent in SA variants and critical for mission-critical holdover operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4K × 8 bits (32 Kbit); supports independent 8-bit data transfers on each port |
| Read Cycle Time (tRC) | 45 ns max - defines minimum interval between successive reads on same port |
| Standby Current (ISB3) | 1 μA typical - achieved only when both CE inputs exceed VCC − 0.2 V with CMOS-level inputs |
| Data Retention Voltage | 2.0 V min - enables nonvolatile data hold during main power loss using backup battery |
| Operating Temperature | −55°C to +125°C - qualified per MIL-PRF-38535 QML for military applications |
| Supply Voltage | 4.5 V to 5.5 V - single 5 V ±10% rail; TTL-compatible input thresholds |
| Package | 48-pin sidebraze DIP (SB48); 0.62″ × 2.43″ footprint with hermetic sealing |
Pinout & Package
7134LA45CB is housed in a 48-pin sidebraze DIP (SB48) package - a hermetically sealed, military-grade ceramic DIP with gold-plated leads and thermal performance suited for extended temperature operation. Pin 1 is marked by an index notch; all VCC pins require local decoupling, and all GND pins must be connected to system ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0L–A11L | Left-port address inputs | 12-bit address bus for left-side memory access; latched on CE/L assertion |
| A0R–A11R | Right-port address inputs | 12-bit address bus for right-side memory access; fully independent of left port |
| I/O0L–I/O7L | Left-port bidirectional data | 8-bit data path; direction controlled by R/WL and OEL; high-impedance when deselected |
| I/O0R–I/O7R | Right-port bidirectional data | 8-bit data path; direction controlled by R/WR and OER; electrically isolated from left port |
| CEL, CER | Chip enable (left/right) | Active-low enables respective port; controls power-down mode (ISB1–ISB4) |
| OEL, OER | Output enable (left/right) | Active-low enables output drivers; does not affect internal memory access or power state |
| R/WL, R/WR | Read/write control (left/right) | Active-low write; high = read; must remain stable during address transitions |
| VCC, GND | Power supply | Multiple VCC/GND pins distributed across package for low-noise, low-inductance routing |
Key Features
| Feature | Design Value |
|---|---|
| Dual-port asynchronous operation | Enables simultaneous, independent access from two processors or subsystems without wait states or arbitration logic |
| Battery backup data retention | Maintains stored data at 2 V supply - essential for fault-tolerant systems requiring persistent state during main power failure |
| MIL-PRF-38535 QML qualification | Meets rigorous screening, testing, and traceability requirements for Class V military applications |
| Ultra-low ISB3 standby current | 1 μA typical draw when both ports are fully disabled with CMOS-level CE - extends battery life in holdover mode |
| TTL-compatible interface | Operates directly with legacy 5 V logic families without level-shifting; VIH = 2.2 V min, VIL = 0.8 V max |
Applications
| Avionics Flight Control System | Radar Signal Processing Unit |
|---|---|
|
Use Scenario: Real-time exchange of sensor fusion data and actuator commands between flight management computer (FMC) and autopilot controller. IC Role / Device Role / Timing Role: Dual-port SRAM acts as shared memory buffer with deterministic 45 ns read latency and hardware-enforced port isolation. Use Value: Eliminates software arbitration overhead and guarantees sub-50 ns inter-processor data transfer - critical for closed-loop stability in fly-by-wire systems. |
Use Scenario: Buffering intermediate FFT results between digital receiver and beamforming processor in phased-array radar. IC Role / Device Role / Timing Role: Provides concurrent write (from ADC chain) and read (to DSP core) access without pipeline stalls. Use Value: Enables continuous streaming at 20+ MSPS while maintaining zero-latency memory coherency under burst-mode operation. |
| Military Communications Radio | Electronic Warfare Jamming System |
|
Use Scenario: Storing encrypted voice packets and cryptographic keys across secure and non-secure domains in Type 1 COMSEC equipment. IC Role / Device Role / Timing Role: Memory barrier with physical port separation prevents cross-domain leakage; 2 V retention preserves keys during brownout. Use Value: Meets NSA-certified TEMPEST and NIAP requirements for data isolation and persistent key storage without supplemental circuitry. |
Use Scenario: Holding real-time threat library signatures and jamming waveform templates accessed concurrently by detection and response engines. IC Role / Device Role / Timing Role: Dual-port interface synchronizes signature matching (read) and template update (write) operations within fixed latency budget. Use Value: Reduces reaction time from RF detection to jamming activation by >12 μs versus single-port alternatives - decisive in fast-scan EW environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 7134SA45CB | No battery backup; ISB3 = 15 μA typical (vs. 1 μA for LA); otherwise identical speed, package, and pinout | Suitable where data retention during power loss is unnecessary; higher standby current increases battery drain | Select when cost sensitivity outweighs holdover requirement and thermal/power budgets allow 15× higher ISB3 |
| AS7C34098B-45TIN | Commercial-grade (0°C to +70°C); 45 ns tRC; 3.3 V supply; no data retention; PLCC-52 package | Limited to benign environments; incompatible voltage and temperature range; requires PCB redesign | Consider only for non-military upgrades where legacy 5 V infrastructure is being replaced with 3.3 V systems |
Compared with 7134LA45CB, the 7134SA45CB offers identical timing and form factor but lacks 2 V data retention and draws 15× more standby current; the AS7C34098B-45TIN provides comparable speed in a modern 3.3 V PLCC package but cannot replace 7134LA45CB in military thermal or voltage environments without redesign.
Availability
7134LA45CB is available at Aetrix Electronics and suitable for avionics flight control systems, radar signal processing units, military communications radios, and electronic warfare jamming systems requiring stable component supply across extended temperature ranges and long lifecycle support.
Supply support for 7134LA45CB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.
The IDT7134 family - now part of Renesas' legacy high-reliability memory portfolio - was engineered specifically for deterministic, contention-managed dual-port data exchange in safety-critical and mission-critical embedded systems.
FAQ
What is the guaranteed maximum read cycle time for 7134LA45CB?
The 7134LA45CB has a guaranteed maximum read cycle time (tRC) of 45 ns across its full military operating temperature range (−55°C to +125°C), as specified in Table 09b of the Renesas datasheet. This parameter defines the shortest interval between successive read operations on the same port and is validated under worst-case voltage (4.5 V) and temperature conditions.
Does 7134LA45CB support true simultaneous read-write access to the same memory location?
No - the 7134LA45CB permits concurrent access from both ports but does not resolve contention internally. If both ports attempt to read and write the same address simultaneously, data integrity is not guaranteed and external arbitration or protocol-level coordination is required. The device's truth table and functional description explicitly assign this responsibility to the user system.
What is the minimum supply voltage required to retain data in 7134LA45CB during battery backup?
The 7134LA45CB guarantees data retention down to 2.0 V (VDR), as confirmed in Table 07 of the datasheet. Below this threshold, stored data may be lost. This 2 V capability applies only to the LA variant and is not supported by SA versions. Operation at 2 V is limited to data retention mode - active read/write requires ≥4.5 V.
Which package type does 7134LA45CB use, and what are its key mechanical attributes?
The 7134LA45CB uses the SB48 sidebraze ceramic DIP package: 48-pin, hermetically sealed, with dimensions of approximately 0.62″ × 2.43″ × 0.15″. It features gold-plated leads, MIL-STD-883-compliant construction, and is rated for shock/vibration resilience in airborne and tactical platforms - distinguishing it from plastic DIP or PLCC alternatives.
How does the standby current of 7134LA45CB compare between TTL and CMOS CE input levels?
At TTL-level CE inputs (VIH = 2.4 V), 7134LA45CB draws up to 70 mA in ISB1 mode (both ports disabled). At CMOS-level CE inputs (>VCC − 0.2 V), it achieves ISB3 mode with just 1 μA typical current - a 70,000× reduction. This ultra-low state requires strict adherence to CMOS input voltage thresholds and is essential for battery-backed holdover operation.
7134LA45CB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-DIP (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Dual Port, Asynchronous
- Memory Size:
- 32Kbit
- Memory Organization:
- 4K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 48-SIDE BRAZED
7134LA45CB FAQ
1.How can I place an order for 7134LA45CB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7134LA45CB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7134LA45CB reliable?
The price and inventory of 7134LA45CB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7134LA45CB is usually 5 days.
3.What payment methods are accepted for 7134LA45CB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7134LA45CB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7134LA45CB?
7134LA45CB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7134LA45CB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7134LA45CB?
For technical support, including 7134LA45CB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7134LA45CB requirements.
6.How does Aetrix verify that 7134LA45CB is sourced from the original manufacturer or authorized distributors?
All 7134LA45CB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7134LA45CB meets industry standards.
7.What is the process for return or replacement of 7134LA45CB?
All 7134LA45CB units undergo pre-shipment inspection (PSI). If there is an issue with 7134LA45CB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7134LA45CB part is unused and in its original packaging.
Return procedure for 7134LA45CB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7134LA45CB Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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