Renesas 7134LA55CB

Overview

IDT7134LA55CB from Renesas Electronics is a high-speed 4K × 8 dual-port static RAM with independent asynchronous left/right ports, 55 ns maximum read cycle time, TTL-compatible 5V ±10% operation, and 1 µA typical standby current - enabling real-time data exchange in military-grade arbitration-free systems such as radar signal processors and avionics bus controllers.

For engineers reviewing the 7134LA55CB datasheet, 7134LA55CB pinout, 7134LA55CB application, or 7134LA55CB equivalent, this page delivers verified package mapping (SB48 sidebraze DIP), confirmed dual-port timing parameters, battery-backed data retention capability (2V min), and validated alternatives for MIL-PRF-38535 QML-compliant designs.

Technical Context

The 7134LA55CB implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port - eliminating internal arbitration logic and requiring external contention management. It supports simultaneous read/write operations across ports, with port-to-port write-to-read delay of ≤55 ns (tDDD).

Its low-power LA variant achieves 1 µA full-standby current (ISB3) under CMOS-level CE deassertion and retains data at VCC ≥ 2.0 V, making it suitable for battery-backed mission-critical memory buffers where power interruption resilience is mandatory.

Key Specifications

Pinout & Package

7134LA55CB uses the SB48 (48-pin sidebraze DIP) package: 0.62 in × 2.43 in × 0.15 in body, ceramic-metal hermetic construction rated for extended military temperature operation and high-reliability environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with 7134LA55CB, 7134LA45CB offers improved throughput at identical reliability and retention, while 7134SA55CB trades off battery backup and ultra-low standby for potentially lower unit cost in non-critical applications.

Availability

7134LA55CB is available at Aetrix Electronics and suitable for radar signal processing, avionics data bus interfaces, and secure crypto modules requiring stable component supply across extended military temperature ranges and long production lifecycles.

Supply support for 7134LA55CB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.

The IDT7134 family was developed by Integrated Device Technology (acquired by Renesas in 2019) specifically for high-reliability dual-port memory applications demanding MIL-PRF-38535 qualification and battery-backed operation.

FAQ

What is the guaranteed data retention voltage for the 7134LA55CB?

The 7134LA55CB guarantees data retention down to VCC = 2.0 V across its full military temperature range (–55°C to +125°C). This specification is explicitly defined in Table 7 (Data Retention Characteristics) of the Renesas datasheet, and applies only to the LA variant - the SA version does not support this feature. The 7134LA55CB maintains stored memory contents without refresh during brownout conditions typical in aircraft power systems.

Does the 7134LA55CB support true simultaneous read/write between ports?

Yes, the 7134LA55CB supports fully asynchronous, independent read and write operations on left and right ports - but simultaneous access to the same memory location requires external arbitration to avoid data corruption. Its architecture provides no internal collision detection or resolution logic. The 7134LA55CB's port-to-port write-to-read delay (tDDD) is specified at ≤55 ns, enabling deterministic inter-processor communication when properly synchronized.

Which package type does the 7134LA55CB use, and what are its mechanical characteristics?

The 7134LA55CB uses the SB48 package: a 48-pin sidebraze ceramic DIP measuring 0.62 in × 2.43 in × 0.15 in. It features hermetic sealing, metal-ceramic construction, and is qualified to MIL-PRF-38535 QML Class B. Unlike plastic DIPs, the SB48 provides superior thermal stability and moisture resistance - essential for deployment in high-vibration, wide-temperature military platforms where the 7134LA55CB is commonly applied.

How does the standby current of the 7134LA55CB compare between TTL and CMOS input levels?

The 7134LA55CB exhibits four distinct standby current modes. With TTL-level CE inputs (VIH = 2.4 V), ISB1 is 70 µA (both ports disabled). With CMOS-level CE inputs (CE > VCC – 0.2 V), ISB3 drops to 1 µA typical - a 70× reduction enabling battery backup operation. This behavior is documented in Table 6b and confirms that the 7134LA55CB's ultra-low-power capability requires proper CMOS-level signaling on chip enable lines to activate full standby mode.

Is the 7134LA55CB pin-compatible with other members of the IDT7134 family?

Yes, all IDT7134 variants - including 7134LA55CB, 7134SA55CB, and 7134LA45CB - share identical pinouts across the SB48 package. Pin functions (A0L–A11L, I/O0R–I/O7R, CEL, CER, etc.) and physical layout are fully consistent. However, functional differences exist: only LA versions support 2V data retention, and timing parameters (e.g., tRC = 55 ns vs. 45 ns) affect system-level timing closure - so electrical compatibility does not imply automatic drop-in replacement without validation.