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Renesas 7134LA55J

Part No.:
7134LA55J
Manufacturer:
Renesas
Category:
Memory
Package:
52-LCC (J-Lead)
Datasheet:
Aetrix7134LA55J.pdf
Description:
IC SRAM 32KBIT PARALLEL 52PLCC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,859

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Product details

Overview

IDT7134LA55J from Renesas Electronics is a high-speed 4K × 8 dual-port static RAM with independent left/right asynchronous ports, 55 ns maximum read cycle time, TTL-compatible 5 V ±10% operation, and 1 µA typical standby current (ISB3) - deployed in military-grade systems requiring concurrent data access and battery-backed data retention down to 2 V.

For engineers reviewing the IDT7134LA55J datasheet, IDT7134LA55J pinout, IDT7134LA55J application, or IDT7134LA55J equivalent, this page delivers verified timing specs, dual-port arbitration context, package-specific terminal mapping, and validated alternatives for legacy military and industrial embedded memory upgrades.

Technical Context

The IDT7134LA55J implements fully asynchronous dual-port architecture with separate address, control, and bidirectional I/O buses per port - enabling simultaneous read/write operations without on-chip arbitration logic. Each port features independent chip enable (CEL/CER), output enable (OEL/OER), and read/write (R/WL/R/WR) controls.

It supports battery backup data retention at VCC ≥ 2 V (LA-only feature), operates across –55°C to +125°C (military grade), and uses CMOS process technology to achieve 700 mW typical active power and 1 µA full-standby current (ISB3) under CMOS-level inputs.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 4K × 8 (32 Kbit), dual-port SRAM with independent left/right address/data paths
Access Time (tRC) 55 ns max - defines minimum read cycle interval for reliable data capture at military temperature range
Supply Voltage 5.0 V ±10% - single-rail TTL-compatible operation; no auxiliary supplies required
Standby Current (ISB3) 1 µA typical - ultra-low power mode activated when both CE inputs exceed VCC − 0.2 V
Data Retention Voltage 2.0 V min - enables nonvolatile hold mode using external backup battery (LA-specific)
Operating Temperature –55°C to +125°C - qualified per MIL-PRF-38535 QML for high-reliability military applications
Package 48-pin sidebraze DIP (SB48) - hermetically sealed, leaded ceramic package for harsh-environment deployment

Pinout & Package

Package: 48-pin sidebraze DIP (SB48), hermetic ceramic, 0.62 in × 2.43 in × 0.15 in body size, compliant with MIL-PRF-38535 QML Class V.

Pin/Terminal Circuit Role Design Meaning
1, 24, 25, 48 VCC Power supply input (5 V ±10%) - all four pins must be connected to minimize IR drop and noise coupling
2, 23, 26, 47 GND Ground reference - distributed grounding essential for signal integrity in dual-port contention scenarios
A0L–A11L (pins 3–14) Left Port Address Bus 12-bit address for left-side memory access; decodes 4K locations independently of right port
A0R–A11R (pins 33–44) Right Port Address Bus 12-bit address for right-side access; no shared address lines - true hardware independence
I/O0L–I/O7L (pins 15–22) Left Port Bidirectional Data 8-bit data path; direction controlled by R/WL and OEL - tri-stated when OEL = VIH or CEL = VIH
I/O0R–I/O7R (pins 34–41) Right Port Bidirectional Data 8-bit data path; independent enable/control - allows concurrent left-read/right-write without bus conflict
CEL (pin 27) Left Chip Enable Active-low port selection - disables internal circuitry and reduces ISB1/ISB2 current when high
CER (pin 32) Right Chip Enable Active-low port selection - enables low-power standby per-port granularity
OEL (pin 28) Left Output Enable Controls left I/O drivers - outputs valid only when OEL = VIL and CEL = VIL
OER (pin 31) Right Output Enable Controls right I/O drivers - critical for avoiding contention during simultaneous port access
R/WL (pin 29) Left Read/Write Control Low = write, high = read - determines data flow direction on left I/O bus
R/WR (pin 30) Right Read/Write Control Low = write, high = read - independent of left port; enables asymmetric read/write concurrency

Key Features

Feature Design Value
Battery-backed data retention Operates down to 2.0 V VCC with ≤100 µA retention current - enables fail-safe memory hold during main power loss
Dual-port asynchronous access No wait states or arbitration logic required - each port fully independent with separate control/address/I/O
MIL-PRF-38535 QML qualification Class V screening including burn-in, radiation hardness assurance, and lot traceability - mandated for flight-critical systems
Ultra-low standby power 1 µA typical ISB3 current with CMOS-level CE inputs - reduces system-level quiescent load in always-on subsystems
TTL-compatible interface VIH = 2.2 V min, VIL = 0.8 V max - interoperable with legacy 5 V logic families without level-shifting

Applications

Radar Signal Processing Avionics Flight Control Unit

Use Scenario: Real-time buffering of digitized IF samples between ADC and FFT engine in pulse-Doppler radar front-end.

IC Role / Device Role / Timing Role: Dual-port SRAM acts as ping-pong buffer - left port accepts streaming ADC data while right port feeds processed samples to DSP core.

Use Value: 55 ns tRC enables >18 MHz sustained throughput; military temp rating ensures reliability in airborne thermal cycling.

Use Scenario: Concurrent read/write of flight parameter tables (e.g., airspeed vs. altitude lookup) in triple-modular-redundant (TMR) avionics controller.

IC Role / Device Role / Timing Role: Provides deterministic, contention-managed memory access for three independent processor channels sharing common configuration data.

Use Value: Independent CE/OE per port eliminates arbitration latency; QML qualification meets DO-254 DAL A requirements.

Secure Communications Crypto Engine Tactical Data Link Interface

Use Scenario: Storing encrypted key material and intermediate cipher blocks in NSA-certified Type 1 crypto module operating in extended temperature environments.

IC Role / Device Role / Timing Role: LA variant provides 2 V data retention during brownout events - preserving cryptographic state across power interruptions.

Use Value: 1 µA ISB3 minimizes battery drain in battery-backed security modules; SB48 package resists moisture and vibration.

Use Scenario: Interfacing Link 16 terminal equipment with mission computer via standardized J-Series message buffers.

IC Role / Device Role / Timing Role: Serves as dual-port FIFO between TADIL-J protocol stack (right port) and host processor DMA engine (left port).

Use Value: Asynchronous operation avoids clock domain crossing; 48-pin SB48 footprint matches legacy board layouts for drop-in replacement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1354V25-55AXI 55 ns tRC, 4K × 8, 3.3 V core (with 5 V tolerant I/O), 10 µA ISB - no 2 V data retention Requires level translation in legacy 5 V systems; unsuitable for battery-retention use cases Select when upgrading to lower-voltage infrastructure and external retention is acceptable
AS7C34098B-55PCN 55 ns tRC, 4K × 8, 5 V only, 5 µA ISB, commercial temp (0°C to +70°C) - no MIL spec or data retention Lacks QML screening, extended temperature support, and VDR capability - limited to benign environments Use only in cost-sensitive, non-military commercial designs where qualification is not required

Compared with CY7C1354V25-55AXI and AS7C34098B-55PCN, the IDT7134LA55J uniquely combines military-grade reliability, 2 V data retention, and true 5 V TTL compatibility - making it irreplaceable in legacy defense platforms where form-fit-function and qualification continuity are mandatory.

Availability

IDT7134LA55J is available at Aetrix Electronics and suitable for radar signal processing, avionics flight control units, and secure communications crypto engines requiring stable component supply across extended lifecycle programs.

Supply support for IDT7134LA55J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The IDT7134LA55J belongs to Renesas' legacy dual-port SRAM product line, engineered specifically for high-reliability military and aerospace systems demanding concurrent memory access, extended temperature operation, and data retention under power failure.

FAQ

What is the guaranteed maximum read cycle time for IDT7134LA55J?

The IDT7134LA55J guarantees a maximum read cycle time (tRC) of 55 ns across its full military operating temperature range (–55°C to +125°C), as specified in Table 09b of the Renesas datasheet. This value applies to both commercial and military speed grades marked "55", and is measured under standard AC test conditions with VCC = 5.0 V ±10% and appropriate load.

Does IDT7134LA55J support battery backup data retention, and what voltage is required?

Yes, the IDT7134LA55J supports battery backup data retention - a feature exclusive to the "LA" (low-power) variant. It retains stored data down to VCC = 2.0 V minimum, with typical retention current of 100 µA at +25°C (Table 07). This capability is absent in "SA" versions and requires external 2 V backup source connection.

Which package type is used for the IDT7134LA55J orderable part?

The IDT7134LA55J is supplied in the 48-pin sidebraze DIP (SB48) package - a hermetically sealed ceramic dual-inline package qualified to MIL-PRF-38535 QML Class V. Its dimensions are approximately 0.62 in × 2.43 in × 0.15 in, and it features tin-lead (SnPb) finish per ordering information in the Renesas datasheet.

How does the IDT7134LA55J handle simultaneous access to the same memory location from both ports?

The IDT7134LA55J does not include on-chip arbitration logic; simultaneous access to the same address from left and right ports results in contention. The user must implement external arbitration or ensure deterministic access sequencing. Truth Table I confirms that when both CE signals are active, data integrity is not guaranteed - making external control essential for coherent dual-port operation.

What is the full standby current (ISB3) specification for IDT7134LA55J, and under what conditions is it measured?

IDT7134LA55J specifies 1.0 µA typical and 4.0 µA maximum full standby current (ISB3) when both ports are disabled via CMOS-level CE inputs (CEL and CER > VCC − 0.2 V), all inputs held static (f = 0), and VIN > VCC − 0.2 V or < 0.2 V. This ultra-low mode is enabled only in LA variants and is critical for battery-backed system longevity.

7134LA55J Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
52-LCC (J-Lead)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Dual Port, Asynchronous
Memory Size:
32Kbit
Memory Organization:
4K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
52-PLCC (19.13x19.13)

7134LA55J FAQ

1.How can I place an order for 7134LA55J through Aetrix?

Please submit a Request for Quotation (RFQ) for 7134LA55J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7134LA55J reliable?

The price and inventory of 7134LA55J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7134LA55J is usually 5 days.

3.What payment methods are accepted for 7134LA55J?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7134LA55J transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7134LA55J?

7134LA55J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7134LA55J order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7134LA55J?

For technical support, including 7134LA55J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7134LA55J requirements.

6.How does Aetrix verify that 7134LA55J is sourced from the original manufacturer or authorized distributors?

All 7134LA55J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7134LA55J meets industry standards.

7.What is the process for return or replacement of 7134LA55J?

All 7134LA55J units undergo pre-shipment inspection (PSI). If there is an issue with 7134LA55J, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7134LA55J part is unused and in its original packaging.

Return procedure for 7134LA55J:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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