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Renesas 7134LA70CB
- Part No.:
- 7134LA70CB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-DIP (0.600", 15.24mm)
- Datasheet:
-
7134LA70CB.pdf
- Description:
- IC SRAM 32KBIT PARALLEL SB48
- Quantity:
- Payment:
- Shipping:
Inventory:1,275
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Product details
Overview
IDT7134LA70CB from Renesas Electronics is a high-speed 4K × 8 dual-port static RAM with military-grade temperature range (–55°C to +125°C), 70 ns maximum read cycle time, TTL-compatible 5V ±10% operation, and battery-backed data retention down to 2V - used in real-time avionics interprocessor communication systems requiring simultaneous asynchronous access from two independent buses.
For engineers reviewing the 7134LA70CB datasheet, 7134LA70CB pinout, 7134LA70CB application, or 7134LA70CB equivalent, key selection criteria include military-qualified timing (tRC = 70 ns max), ultra-low standby current (ISB3 = 0.2 mA typ.), dual-port arbitration-free architecture, and sidebraze ceramic DIP (SB48) packaging for high-reliability embedded control.
Technical Context
The 7134LA70CB implements fully asynchronous dual-port SRAM architecture with independent left/right address, control, and I/O buses - enabling concurrent read/write operations without on-chip arbitration logic. Each port features dedicated CE, OE, R/W, and 12-bit address inputs (A0–A11), supporting contention-aware external arbitration.
Its low-power LA variant delivers 1 µA typical standby current per port under CMOS-level CE disable (ISB3), plus guaranteed 2V data retention during battery backup mode - a feature exclusive to LA versions and validated across –55°C to +125°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4K × 8 bits (32 Kbit); supports independent 8-bit data transfers on both ports simultaneously |
| Read Cycle Time (tRC) | 70 ns max; defines minimum interval between successive reads on same port - critical for deterministic real-time bus bridging |
| Supply Voltage | 5.0 V ±10%; single-rail TTL-compatible operation eliminates need for voltage translation in legacy military designs |
| Data Retention Voltage | 2.0 V min; enables nonvolatile memory hold during main power loss using backup battery - LA-specific, not available on SA variants |
| Operating Temperature | –55°C to +125°C; qualified to MIL-PRF-38535 QML Class V for flight-critical avionics and ground-based radar subsystems |
| Standby Current (ISB3) | 0.2 mA typical (both ports); ultra-low full-standby draw enables >10-year battery life in maintenance-free field-deployed systems |
| Package | 48-pin sidebraze ceramic DIP (SB48); hermetically sealed, leaded package with proven reliability in high-vibration, high-radiation environments |
Pinout & Package
48-pin sidebraze ceramic DIP (SB48) package with 0.62″ × 2.43″ body size and through-hole mounting. Pin 1 identified by index notch; all VCC pins require local decoupling, all GND pins must be connected to system ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0L–A11L | Left port address inputs | 12-bit address bus for left-side memory access; independent of right port addressing |
| A0R–A11R | Right port address inputs | 12-bit address bus for right-side memory access; no shared address lines with left port |
| I/O0L–I/O7L | Left port bidirectional data | 8-bit tri-state I/O bus; driven only when CEL = L and OEL = L during read, or CEL = L and R/WL = L during write |
| I/O0R–I/O7R | Right port bidirectional data | 8-bit tri-state I/O bus; driven only when CER = L and OER = L during read, or CER = L and R/WR = L during write |
| CEL, CER | Chip enable (left/right) | Active-low port select; disables internal circuitry and reduces current to ISB1/ISB3 levels when high |
| OEL, OER | Output enable (left/right) | Active-low control for output drivers; places I/O pins in high-Z state when high, regardless of CE state |
| R/WL, R/WR | Read/write control (left/right) | Active-low write strobe; determines direction of data transfer on respective port's I/O bus |
| VCC, GND | Power and ground | Multiple VCC/GND pins distributed across package for low-inductance supply routing and noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Fully asynchronous dual-port operation | Enables independent, unsynchronized read/write access from two processors without wait states or arbitration logic |
| Battery backup data retention | Guaranteed 2V operation preserves memory contents during main power failure - unique to LA family variants |
| MIL-PRF-38535 QML Class V compliance | Meets stringent screening, testing, and traceability requirements for space-qualified and airborne military systems |
| Ultra-low ISB3 standby current | 0.2 mA typical with both ports disabled via CMOS-level CE; enables multi-year battery backup without refresh circuitry |
| TTL-compatible interface | Direct connection to legacy 5V microcontrollers, FPGAs, and ASICs without level-shifting components |
Applications
| Avionics Data Bus Bridge | Real-Time Radar Signal Buffer |
|---|---|
|
Use Scenario: Interfacing dissimilar aircraft subsystems (e.g., flight control computer ↔ mission computer) requiring deterministic, lock-free memory sharing. IC Role / Device Role / Timing Role: Dual-port SRAM acting as synchronous message buffer with independent clock domains; tRC = 70 ns ensures sub-15 µs round-trip latency. Use Value: Eliminates software arbitration overhead and guarantees atomic read-modify-write cycles across safety-critical partitions. |
Use Scenario: Storing digitized RF samples between ADC capture and DSP processing in airborne pulse-Doppler radar front ends. IC Role / Device Role / Timing Role: High-speed ping-pong buffer allowing continuous acquisition on one port while FFT analysis runs on the other. Use Value: 70 ns tRC supports ≥14.3 MSPS sustained throughput; SB48 package withstands shock/vibration up to 20 g RMS. |
| Secure Crypto Key Vault | Tactical Radio Protocol Stack |
|
Use Scenario: Tamper-resistant storage of cryptographic keys and session tokens in encrypted comms modules deployed in hostile EM environments. IC Role / Device Role / Timing Role: Battery-backed SRAM providing nonvolatile key storage with 2V retention threshold - immune to power-glitch attacks. Use Value: ISB3 = 0.2 mA enables >12-year key retention on coin-cell backup; MIL-spec packaging resists ionizing radiation. |
Use Scenario: Real-time protocol translation between legacy HF radios and modern IP-based tactical networks in mobile command vehicles. IC Role / Device Role / Timing Role: Dual-port memory serving as packet reassembly buffer with separate ingress/egress DMA channels. Use Value: Asynchronous ports eliminate inter-channel blocking; 4K × 8 capacity supports 512-byte MTU buffers per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1352BV-70AC | 70 ns tRC, 5V, 4K × 8, but commercial temp only (0°C to +70°C); no MIL-PRF-38535 qualification or 2V data retention | Suitable for ground-based test equipment or non-mission-critical industrial controllers | Select only if military temperature range and QML certification are not required |
| AS7C34098B-70BIN | 70 ns tRC, 3.3V core (5V tolerant I/O), industrial temp (–40°C to +85°C); lacks battery backup and MIL qualification | Applicable in cost-sensitive embedded systems where lower voltage operation reduces system power | Choose when migrating from 5V to mixed-voltage designs and MIL compliance is unnecessary |
Compared with CY7C1352BV-70AC and AS7C34098B-70BIN, the 7134LA70CB uniquely combines military temperature range, QML Class V screening, and 2V data retention - making it irreplaceable in flight-critical, long-life, battery-backed avionics applications where environmental robustness is non-negotiable.
Availability
7134LA70CB is available at Aetrix Electronics and suitable for avionics data bus bridges, real-time radar signal buffers, secure crypto key vaults, and tactical radio protocol stacks requiring stable component supply across extended product lifecycles.
Supply support for 7134LA70CB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The IDT7134 family was originally developed by Integrated Device Technology (acquired by Renesas in 2019) specifically for high-reliability dual-ported memory applications in defense electronics, aerospace systems, and real-time industrial controllers.
FAQ
What is the maximum operating temperature range for the 7134LA70CB?
The 7134LA70CB is rated for –55°C to +125°C ambient operation and is manufactured in compliance with MIL-PRF-38535 QML Class V. This military-grade temperature range is confirmed in the datasheet's "Recommended Operating Temperature" table and applies specifically to the CB-suffixed variants like 7134LA70CB, which use the SB48 sidebraze ceramic package.
Does the 7134LA70CB support battery backup data retention, and at what voltage?
Yes, the 7134LA70CB supports battery backup data retention down to 2.0 V, as specified in Table 7 ("Data Retention Characteristics") of the datasheet. This capability is exclusive to LA-series parts and is not available on SA variants. The parameter VDR = 2.0 V (min) is guaranteed across the full military temperature range.
What package type is used for the 7134LA70CB, and what are its mechanical dimensions?
The 7134LA70CB uses the SB48 (sidebraze 48-pin ceramic DIP) package, with approximate dimensions of 0.62 in × 2.43 in × 0.15 in, as documented in the "Pin Configurations" section. This hermetically sealed, leaded package is designed for high-reliability applications requiring resistance to thermal cycling, vibration, and humidity.
How does the 7134LA70CB handle simultaneous access to the same memory location from both ports?
The 7134LA70CB does not include on-chip arbitration logic. When both ports access the same address concurrently, data integrity is the user's responsibility. The device allows simultaneous reads safely, but write-write or read-write contention requires external arbitration - a design choice explicitly stated in the "Description" section to avoid wait states in deterministic systems.
What is the typical standby current consumption of the 7134LA70CB in full standby mode?
In full standby mode (ISB3), where both ports are disabled via CMOS-level CE inputs and all inputs held static, the 7134LA70CB consumes 0.2 mA typical current, as shown in Table 6b. This ultra-low value enables multi-year battery backup operation and is a defining characteristic of the LA power variant.
7134LA70CB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-DIP (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Dual Port, Asynchronous
- Memory Size:
- 32Kbit
- Memory Organization:
- 4K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 48-SIDE BRAZED
7134LA70CB FAQ
1.How can I place an order for 7134LA70CB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7134LA70CB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7134LA70CB reliable?
The price and inventory of 7134LA70CB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7134LA70CB is usually 5 days.
3.What payment methods are accepted for 7134LA70CB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7134LA70CB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7134LA70CB?
7134LA70CB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7134LA70CB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7134LA70CB?
For technical support, including 7134LA70CB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7134LA70CB requirements.
6.How does Aetrix verify that 7134LA70CB is sourced from the original manufacturer or authorized distributors?
All 7134LA70CB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7134LA70CB meets industry standards.
7.What is the process for return or replacement of 7134LA70CB?
All 7134LA70CB units undergo pre-shipment inspection (PSI). If there is an issue with 7134LA70CB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7134LA70CB part is unused and in its original packaging.
Return procedure for 7134LA70CB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7134LA70CB Tags
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AT24C02C-XHM-T
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