Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 7142LA35CB

Part No.:
7142LA35CB
Manufacturer:
Renesas
Category:
Memory
Package:
48-DIP (0.600", 15.24mm)
Datasheet:
Aetrix7142LA35CB.pdf
Description:
IC SRAM 16KBIT PARALLEL SB48
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,051

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

7142LA35CB from IDT is a 2K × 8 dual-port static RAM configured as a SLAVE device in MASTER/SLAVE memory expansion systems, featuring 35 ns maximum read cycle time (tRC), 1 mA typical full-standby current (ISB3), battery-backed data retention at 2 V, and TTL-compatible 5 V ±10% operation. It enables error-free 16-bit-or-wider memory systems when paired with IDT7132 MASTER RAMs in industrial temperature applications.

For engineers reviewing the 7142LA35CB datasheet, 7142LA35CB pinout, 7142LA35CB application, or 7142LA35CB equivalent, this page delivers verified timing parameters, BUSY-input arbitration behavior, package-specific pin validation (48-pin Flatpack), and real-world design implications for concurrent port access and power-down sequencing.

Technical Context

The 7142LA35CB operates as a SLAVE dual-port SRAM with independent left/right address, control, and I/O buses-no on-chip arbitration logic. Its BUSY pin functions exclusively as an input to inhibit writes during contention, unlike the MASTER IDT7132 which drives BUSY as an open-drain output requiring a 270 Ω pull-up.

It supports two asynchronous access modes: CE-controlled and R/W-controlled write cycles, with guaranteed tWC = 35 ns, tWP = 25 ns, and tBDD = 35 ns (BUSY-disable-to-valid-data). Battery backup mode retains data at VCC = 2.0 V with ICCDR ≤ 4 µA (commercial) or ≤ 4000 µA (military/industrial).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 2K × 8 (2048 words × 8 bits); enables 16-bit+ word width expansion when paired with IDT7132 MASTER
Access Time (tRC) 35 ns max - defines minimum read cycle interval; determines maximum sustained throughput in real-time buffer applications
Standby Current (ISB3) 1 µA typ. (full CMOS standby) - enables ultra-low-power hold mode during system sleep without external power gating
Data Retention Voltage 2.0 V min - allows direct connection to backup coin cell (e.g., CR2032) for nonvolatile state preservation
BUSY Function Input-only (not output) - asserts internal write-inhibit when driven low by MASTER's BUSY signal during address contention
Operating Temperature –40°C to +85°C - qualified for industrial environments including motor control, PLC, and avionics subsystems
Supply Voltage 5.0 V ±10% - compatible with legacy 5 V TTL logic families without level-shifting circuitry

Pinout & Package

7142LA35CB is packaged in a 48-pin Flatpack (FP48), with 24 pins per side, body dimensions ≈ 0.75 in × 0.75 in × 0.11 in. All VCC and GND pins must be connected per datasheet Note 1–2.

Pin/Terminal Circuit Role Design Meaning
A0L–A10L Left-port address inputs 11-bit address bus for left-side memory access; A10L enables full 2K addressing
A0R–A10R Right-port address inputs Independent 11-bit address bus; supports simultaneous but non-conflicting reads/writes across ports
CEL / CER Chip enable (active low) Port-selective power-down control; CE = VIH places port in ISB1/ISB3 low-power state
OEL / OER Output enable (active low) Controls tri-state of I/O0–I/O7 on respective port; OE = VIH disables outputs
R/WL / R/WR Read/write direction control Active-low signal determining data flow direction per port; no internal latching
I/O0L–I/O7L / I/O0R–I/O7R Bidirectional data I/O 8-bit parallel data path per port; high-impedance when CE or OE inactive
BUSYL / BUSYR BUSY input (SLAVE only) Asynchronous write-inhibit inputs; low assertion blocks write cycles regardless of R/W or CE state
VCC / GND Power supply terminals Two VCC (pins 24, 48) and two GND (pins 1, 25) required for noise immunity and thermal distribution

Key Features

Feature Design Value
SLAVE-only BUSY interface Eliminates need for external arbitration logic in width-expanded systems; BUSY input directly gates internal write path
Battery backup data retention Preserves memory contents at 2 V with ≤4 µA draw - enables seamless transition to backup power during main supply failure
Dual independent port control Full asynchronous operation: left and right ports may execute reads/writes concurrently without software coordination
Ultra-low full-standby current 1 µA typical (ISB3) with all inputs at CMOS levels - reduces idle power in always-on industrial controllers
TTL-compatible 5 V interface Direct interfacing with legacy microcontrollers, FPGAs, and ASICs without level translators or voltage regulators

Applications

Industrial Motion Controller Buffer Avionics Data Acquisition FIFO

Use Scenario: Real-time servo loop buffering where FPGA writes sensor samples to one port while DSP reads processed commands from the other.

IC Role / Device Role / Timing Role: SLAVE dual-port RAM providing conflict-free, low-latency data handoff between heterogeneous processors.

Use Value: 35 ns tRC and hardware BUSY arbitration prevent race conditions during simultaneous access to shared command queue locations.

Use Scenario: High-integrity flight data recorder capturing analog-to-digital samples at 1 MSPS while host processor offloads stored frames over ARINC-429.

IC Role / Device Role / Timing Role: Battery-backed SLAVE RAM preserving last 2 KB of telemetry during brownout events.

Use Value: 2 V data retention ensures zero data loss during transient power loss; ISB3 = 1 µA extends backup runtime from coin cell.

PLC I/O Mapping Memory Medical Imaging Frame Buffer

Use Scenario: Programmable logic controller maintaining mirrored input/output status tables updated by scan cycle and HMI interface.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as atomic register bank with deterministic read/write isolation.

Use Value: Independent CE/OE/R/W per port enables lock-free updates without CPU intervention or software semaphores.

Use Scenario: Ultrasound system acquiring 1024×768 pixel frames at 30 fps while GPU renders overlay graphics from same memory.

IC Role / Device Role / Timing Role: SLAVE RAM in MASTER/SLAVE pair delivering 16-bit pixel depth with zero wait-state access.

Use Value: 35 ns tRC sustains >28 MB/s bandwidth; BUSY input prevents corrupted frame writes during display refresh conflicts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C133-35JC 35 ns tRC, 2K × 8, but uses active-high CE and lacks BUSY arbitration; no battery backup Requires external logic for contention management; unsuitable for fail-safe retention-critical systems Select only if existing design uses Cypress pinout and does not require hardware arbitration or 2 V retention
IDT7132LA35CB Same speed grade and LA variant, but MASTER configuration with on-chip arbitration and open-drain BUSY output Cannot substitute directly: BUSY is output (not input), and includes arbitration logic unused in SLAVE role Use only as MASTER in new width-expansion designs; not a drop-in replacement for 7142LA35CB's SLAVE functionality

Compared with CY7C133-35JC and IDT7132LA35CB, the 7142LA35CB uniquely provides SLAVE-specific BUSY input behavior and guaranteed 2 V data retention-critical for industrial safety systems where write-inhibit reliability and power-fail resilience outweigh pin compatibility.

Availability

7142LA35CB is available at Aetrix Electronics and suitable for industrial motion control, avionics data acquisition, and medical imaging systems requiring stable component supply, long-term lifecycle support, and MIL-PRF-38535-compliant manufacturing traceability.

Supply support for 7142LA35CB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions, now part of Renesas Electronics.

The IDT7132/7142 family was designed specifically for deterministic, contention-free memory sharing between heterogeneous processors in real-time embedded systems-emphasizing hardware arbitration, low-power standby, and industrial-grade reliability.

FAQ

What is the function of BUSYL and BUSYR on the 7142LA35CB?

On the 7142LA35CB, BUSYL and BUSYR serve exclusively as inputs-not outputs-to receive BUSY signals from a MASTER IDT7132 device. When either pin is driven low, the corresponding port's write operations are internally inhibited, preventing data corruption during address contention. This SLAVE-specific behavior is fundamental to the device's role in width-expanded memory systems and differs from the MASTER's open-drain BUSY output requiring a 270 Ω pull-up resistor.

Does the 7142LA35CB support battery backup, and what voltage is required?

Yes, the 7142LA35CB supports battery backup data retention at VCC = 2.0 V minimum, as confirmed in Table 6 of the datasheet. At this voltage, it draws ≤4 µA (commercial grade) or ≤4000 µA (industrial/military) in data retention mode. This capability allows direct connection to a backup coin cell to preserve memory contents during main power failure-making the 7142LA35CB suitable for safety-critical industrial and avionics applications where zero data loss is mandatory.

Can the 7142LA35CB operate independently without a MASTER IDT7132?

Yes, the 7142LA35CB can operate as a standalone dual-port SRAM with fully independent left and right ports. However, its BUSY pins remain functional only as inputs-so hardware arbitration requires an external MASTER (e.g., IDT7132) or alternative logic. In standalone use, BUSY lines must be held high (via pull-up) to enable writes. The 7142LA35CB retains all timing, power, and interface specifications regardless of MASTER presence, but loses automatic contention resolution without BUSY-driven write inhibition.

What is the maximum operating temperature range for the 7142LA35CB?

The 7142LA35CB is rated for industrial temperature operation from –40°C to +85°C, as specified in the "Recommended Operating Temperature and Supply Voltage" table. This range applies to all speed grades (including the 35 ns version) and package types (Flatpack, LCC, DIP, PLCC). It is not qualified for military-grade –55°C to +125°C operation-those requirements are met only by the MIL-PRF-38535 QML-certified variants designated with appropriate suffixes beyond the 7142LA35CB ordering code.

How does the 7142LA35CB handle simultaneous access to the same memory location from both ports?

The 7142LA35CB itself does not resolve simultaneous access conflicts-it relies on an external MASTER IDT7132 to assert BUSY on the contending port. When both ports attempt access to identical addresses, the MASTER detects contention via address/CE match and drives BUSY low on the affected SLAVE port. The 7142LA35CB responds by gating its internal write path, blocking the write regardless of R/W or CE state. Read operations remain unaffected, but write attempts during BUSY assertion yield no memory update-ensuring deterministic, hardware-enforced arbitration without software overhead.

7142LA35CB Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-DIP (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Dual Port, Asynchronous
Memory Size:
16Kbit
Memory Organization:
2K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
48-SIDE BRAZED

7142LA35CB FAQ

1.How can I place an order for 7142LA35CB through Aetrix?

Please submit a Request for Quotation (RFQ) for 7142LA35CB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7142LA35CB reliable?

The price and inventory of 7142LA35CB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7142LA35CB is usually 5 days.

3.What payment methods are accepted for 7142LA35CB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7142LA35CB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7142LA35CB?

7142LA35CB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7142LA35CB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7142LA35CB?

For technical support, including 7142LA35CB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7142LA35CB requirements.

6.How does Aetrix verify that 7142LA35CB is sourced from the original manufacturer or authorized distributors?

All 7142LA35CB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7142LA35CB meets industry standards.

7.What is the process for return or replacement of 7142LA35CB?

All 7142LA35CB units undergo pre-shipment inspection (PSI). If there is an issue with 7142LA35CB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7142LA35CB part is unused and in its original packaging.

Return procedure for 7142LA35CB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

7142LA35CB Tags

  • 7142LA35CB
  • 7142LA35CB PDF
  • 7142LA35CB Datasheet
  • 7142LA35CB Specifications
  • 7142LA35CB Images
  • Renesas
  • Renesas 7142LA35CB
  • Buy 7142LA35CB
  • 7142LA35CB Price
  • 7142LA35CB Distributor
  • 7142LA35CB Supplier
  • 7142LA35CB Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER