Renesas 7143LA70GB

Overview

7143LA70GB from IDT is a low-power, high-speed 2K × 16 dual-port static RAM designed as a SLAVE device in MASTER/SLAVE memory expansion systems. It supports independent asynchronous access on left and right ports, features 70 ns read cycle time (max), 2V data retention, and operates at 5.0 V ±10% with industrial temperature range (–40°C to +85°C). It enables error-free 32-bit-or-wider memory systems without external logic.

For engineers reviewing the 7143LA70GB datasheet, 7143LA70GB pinout, 7143LA70GB application, or 7143LA70GB equivalent, key selection criteria include its role as BUSY-input SLAVE in width-expanded dual-port configurations, 70 ns timing grade, LA-series low-power operation (1 mW standby), and compatibility with 68-pin PLCC/PGA/flatpack or 100-pin TQFP packages.

Technical Context

The 7143LA70GB implements fully asynchronous dual-port architecture with separate address, control, and I/O buses per port. Its BUSY pin functions exclusively as an input for write inhibition-unlike the MASTER IDT7133-which enables deterministic arbitration in multi-chip width-expansion topologies.

It supports byte-level write control (upper/lower) per port, TTL-compatible signaling, and automatic power-down via chip enable (CE). The LA variant delivers 1050 mW typical active power and 1 mW typical standby power, with verified 2 V battery backup data retention capability.

Key Specifications

Pinout & Package

7143LA70GB is available in 68-pin PLCC (PLG68), 68-pin ceramic PGA (GU68), 68-pin flatpack (FP68), and 100-pin TQFP (PNG100) packages. All variants share identical pin functions and dual-port signal mapping.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with 7143SA70GB, the LA variant reduces standby power by 80% and adds 2V data retention-critical for battery-backed systems-while maintaining identical timing and pinout. Compared with CY7C133-70JC, 7143LA70GB eliminates external arbitration components and guarantees deterministic contention resolution in multi-chip width expansions.

Availability

7143LA70GB is available at Aetrix Electronics and suitable for industrial motion controllers, avionics data buffers, and telecom line cards requiring stable component supply, long-term lifecycle support, and MIL-PRF-38535-compliant manufacturing traceability.

Supply support for 7143LA70GB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions, now part of Renesas Electronics.

The IDT7143 product line delivers SLAVE dual-port SRAMs optimized for width-expansion architectures with hardware BUSY arbitration-designed specifically to eliminate "busy lock-out" in multi-chip 32-bit+ memory systems.

FAQ

What is the primary functional distinction between 7143LA70GB and IDT7133 devices?

The 7143LA70GB is a SLAVE-only dual-port SRAM whose BUSY pins function strictly as inputs for write inhibition, while the IDT7133 serves as the MASTER with open-drain BUSY outputs and on-chip arbitration logic. This division enables scalable width expansion without external logic. The 7143LA70GB cannot operate stand-alone as a MASTER and relies on an IDT7133 to drive its BUSY inputs.

Does 7143LA70GB support true 70 ns access across its full industrial temperature range?

Yes, the 70 ns maximum read cycle time (tRC) is guaranteed over –40°C to +85°C per datasheet Table 10b. This specification applies to both commercial and industrial grades, with no derating required within this range. The LA variant maintains timing integrity while delivering lower power than the SA version.

Can 7143LA70GB be used without a MASTER device like IDT7133?

Yes-7143LA70GB operates as a standard dual-port SRAM without BUSY arbitration when both BUSY inputs are tied HIGH. In this mode, it provides independent asynchronous access on both ports but loses contention detection and write-inhibit capability. This configuration is valid for non-contention applications such as isolated CPU-peripheral buffering.

What is the significance of the 'GB' suffix in 7143LA70GB?

The 'GB' suffix denotes the 68-pin ceramic PGA (GU68) package with military-grade screening per MIL-PRF-38535 QML Class V. It confirms compliance with stringent reliability, burn-in, and lot traceability requirements for high-reliability applications. Other package variants use different suffixes (e.g., 'JC' for PLCC).

How does the 2V data retention feature of 7143LA70GB behave during main power loss?

When VCC drops below 2.0 V, the 7143LA70GB enters data retention mode, drawing ≤4000 µA (typical) from the backup source. Data remains valid as long as VCC ≥ 2.0 V and ambient temperature stays within –40°C to +85°C. Recovery to full operation occurs within tR (operation recovery time) after VCC rises above 4.5 V.