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Renesas 7164L100DB
- Part No.:
- 7164L100DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.600", 15.24mm)
- Datasheet:
-
7164L100DB.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,240
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Product details
Overview
7164L100DB from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 100ns maximum access time, TTL-compatible I/O, three-state outputs, and battery backup data retention down to 2V. It operates from a single 5V supply and supports standby power-down via dual chip select (CS1/CS2) control. Used in avionics, radar systems, and hardened embedded controllers requiring non-volatile SRAM persistence during brownout.
For engineers reviewing the 7164L100DB datasheet, 7164L100DB pinout, 7164L100DB application, or 7164L100DB equivalent, key selection criteria include military temperature compliance (–55°C to +125°C), CERDIP-28 package reliability, low-power standby current (≤5µA), and verified data retention at 2V - critical for mission-critical holdover operation.
Technical Context
The 7164L100DB implements fully static asynchronous architecture with no clock or refresh required. Its dual chip select logic enables flexible power management: CS1 HIGH or CS2 LOW forces automatic entry into low-power standby mode, reducing ICCSB to ≤5µA across all temperature grades.
It features two independent chip select inputs (CS1 active-low, CS2 active-high), write enable (WE), output enable (OE), and eight bidirectional I/O lines. The L-version adds guaranteed data retention at VCC ≥ 2.0V with ICCDR ≤ 300µA (military grade), validated per MIL-STD-883 Class B test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8K × 8-bit (65,536 bits), byte-wide parallel interface |
| Access Time (tAA) | 100ns max - defines minimum address-to-valid-data delay in read cycles |
| Supply Voltage (VCC) | 5.0V ±10% (4.5V–5.5V) - single-rail operation simplifies power design |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for aerospace/military use |
| Data Retention Voltage | 2.0V min - enables battery-backed memory holdover during main power loss |
| Standby Current (ISB) | ≤5µA (typ.) - ultra-low quiescent draw in CS-controlled power-down state |
| I/O Interface | TTL-compatible inputs/outputs - direct interfacing with legacy 5V logic without level shifters |
Pinout & Package
7164L100DB is housed in a 28-pin 600-mil ceramic dual in-line package (CDIP, code CD28), hermetically sealed for high-reliability military applications. Pin 1 is marked with a dot; package meets MIL-STD-883 mechanical and environmental requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus for selecting one of 8,192 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path; high-impedance when CS/OE inactive |
| CS1 | Chip Select 1 (active-low) | Primary enable; device enters standby if driven HIGH |
| CS2 | Chip Select 2 (active-high) | Secondary enable; device enters standby if driven LOW |
| WE | Write Enable | Active-low control for write cycles; must be LOW with CS1/CS2 active |
| OE | Output Enable | Active-low control for read data output; disables output drivers when HIGH |
| VCC | Power Supply | +5V supply input; decoupling required per MIL-STD-883 layout guidelines |
| GND | Ground | Signal and power reference plane; separate grounding recommended for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Guaranteed operation at VCC ≥ 2.0V with ICCDR ≤ 300µA (military grade), enabling seamless holdover during main supply interruption |
| Dual chip select power management | CS1 HIGH or CS2 LOW triggers automatic low-power standby (ISB ≤ 5µA), eliminating need for external power sequencing logic |
| MIL-STD-883 Class B qualification | Fully tested per military screening standards including temperature cycling, hermeticity, and radiation hardness assurance |
| TTL-compatible I/O | VIH ≥ 2.2V, VIL ≤ 0.8V, VOH ≥ 2.4V, VOL ≤ 0.4V - interoperable with legacy 5V microprocessor buses without level translation |
| Three-state outputs | OE-controlled high-impedance I/O drivers prevent bus contention in multi-device systems |
Applications
| Avionics Flight Control Memory | Tactical Radar Frame Buffer |
|---|---|
Use Scenario: Stores real-time sensor fusion data and flight control coefficients in airborne computing modules subject to extreme thermal and vibration stress. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer providing deterministic 100ns read/write latency and 2V data retention during engine start-up brownouts. Use Value: Eliminates need for external backup batteries or EEPROM writes, reducing system BOM count and improving MTBF in DO-160G Zone 3 environments. |
Use Scenario: Holds digitized RF echo samples between pulse transmission and FFT processing in ground-based surveillance radar subsystems. IC Role / Device Role / Timing Role: High-reliability parallel memory with MIL-STD-883 Class B qualification ensures uninterrupted operation under EMI-heavy battlefield conditions. Use Value: 600-mil CDIP package provides superior thermal dissipation and hermetic sealing versus plastic alternatives, sustaining >10,000-hour field life. |
| Secure Communications Crypto Key Storage | Hardened Industrial PLC Data Log |
Use Scenario: Retains cryptographic keys and session tokens in encrypted SATCOM terminals operating across extended temperature excursions. IC Role / Device Role / Timing Role: Battery-backed SRAM serving as tamper-resistant volatile storage with immediate write capability and zero write-cycle delay. Use Value: 2V data retention threshold allows integration with low-leakage lithium thionyl chloride backup cells, extending key persistence beyond 10 years. |
Use Scenario: Captures machine status snapshots and fault logs in oil & gas drilling control cabinets exposed to –55°C ambient and 125°C junction temperatures. IC Role / Device Role / Timing Role: Military-grade SRAM delivering deterministic timing and radiation-tolerant operation where commercial parts fail. Use Value: Standby current ≤5µA minimizes battery drain in unattended remote deployments, supporting >5-year maintenance-free operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 7164S100DB | No battery backup support; higher standby current (ISB ≤ 20µA vs. ≤5µA); same 100ns speed and CD28 package | Lacks 2V data retention - unsuitable for brownout-critical systems | Select only when cost sensitivity outweighs holdover requirement and full MIL-STD-883 Class B is not mandated |
| CY62167EV30LL-100BAXI | 16M-bit density (2M × 8), 3.3V core, industrial temp only (–40°C to +85°C), SOIC-32 package | Higher density but incompatible voltage, temperature, and package - requires PCB redesign and level shifting | Consider only for new designs targeting higher capacity and lower power; not a drop-in replacement for 7164L100DB |
Compared with 7164S100DB and CY62167EV30LL-100BAXI, the 7164L100DB uniquely delivers military temperature range, hermetic CDIP packaging, and guaranteed 2V data retention - making it irreplaceable in legacy avionics and defense electronics where form-fit-function and qualification continuity are mandatory.
Availability
7164L100DB is available at Aetrix Electronics and suitable for avionics, radar signal processing, and secure communications systems requiring stable component supply, long-term obsolescence management, and MIL-STD-883-compliant traceability.
Supply support for 7164L100DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 7164L100DB belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for military and aerospace applications demanding MIL-STD-883 qualification, hermetic packaging, and guaranteed data retention under extreme environmental stress.
FAQ
What is the maximum operating temperature range for the 7164L100DB?
The 7164L100DB is rated for –55°C to +125°C operation and is fully qualified per MIL-STD-883 Class B, including temperature cycling, steady-state life, and hermeticity testing. This makes it suitable for deployment in jet engine bays, missile guidance sections, and satellite payload compartments where thermal extremes are routine. The 7164L100DB maintains full functionality and data integrity across this entire range without derating.
Does the 7164L100DB support true battery backup operation?
Yes, the 7164L100DB guarantees data retention at VCC ≥ 2.0V with ICCDR ≤ 300µA (military grade), as specified in Table 10 of the Renesas datasheet. This enables integration with primary lithium backup cells to preserve memory contents during main power failure - a critical feature for flight-critical and cryptographic applications. The 7164L100DB does not require external circuitry to enter or maintain retention mode.
Is the 7164L100DB pin-compatible with other 7164 variants?
Yes, the 7164L100DB shares identical 28-pin CDIP (CD28) pinout and electrical interface with all IDT/Renesas 7164S/L family members, including 7164S100DB and 7164L25DB. Address, data, control signals, and power pins are functionally and physically aligned - allowing direct substitution within the same speed grade and package type without PCB modification. The 7164L100DB retains full compatibility with legacy 7164-based designs.
What is the standby current specification for the 7164L100DB?
The 7164L100DB draws ≤5µA typical standby current (ISB) when placed in low-power mode via CS1 HIGH or CS2 LOW, as confirmed in Table 7 of the Renesas datasheet. This ultra-low ISB enables multi-year operation on small backup batteries in unattended systems. Measured at VCC = 5.0V and TA = +25°C, the 7164L100DB's standby performance remains stable across its full military temperature range.
Can the 7164L100DB be used in new designs despite its legacy status?
Yes - while the 7164L100DB is a mature product, Renesas continues to support it with active manufacturing, full MIL-STD-883 Class B requalification, and documented obsolescence management. Aetrix Electronics maintains strategic inventory and lifecycle coordination for the 7164L100DB, ensuring supply continuity for defense and aerospace programs with 15+ year design lifecycles. The 7164L100DB remains a preferred choice where qualification pedigree and proven field reliability outweigh newer alternatives.
7164L100DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
7164L100DB FAQ
1.How can I place an order for 7164L100DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7164L100DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7164L100DB reliable?
The price and inventory of 7164L100DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L100DB is usually 5 days.
3.What payment methods are accepted for 7164L100DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L100DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7164L100DB?
7164L100DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7164L100DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7164L100DB?
For technical support, including 7164L100DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L100DB requirements.
6.How does Aetrix verify that 7164L100DB is sourced from the original manufacturer or authorized distributors?
All 7164L100DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L100DB meets industry standards.
7.What is the process for return or replacement of 7164L100DB?
All 7164L100DB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L100DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7164L100DB part is unused and in its original packaging.
Return procedure for 7164L100DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7164L100DB Tags
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M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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