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Renesas 7164L25DB

Part No.:
7164L25DB
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.600", 15.24mm)
Datasheet:
Aetrix7164L25DB.pdf
Description:
IC SRAM 64KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,137

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Product details

Overview

7164L25DB from Renesas Electronics is a 64K (8K × 8-bit) low-power CMOS static RAM with 25 ns maximum address access time, TTL-compatible I/O, three-state outputs, and battery backup data retention down to 2 V. It operates from a single 5 V supply and supports military temperature range (–55°C to +125°C) in a 28-pin CERDIP package.

For engineers reviewing the 7164L25DB datasheet, 7164L25DB pinout, 7164L25DB application, or 7164L25DB equivalent, this page delivers verified timing parameters, standby power behavior, chip select logic, data retention capability, and military-grade reliability context essential for avionics, defense computing, and ruggedized embedded memory design.

Technical Context

The 7164L25DB implements fully static asynchronous operation-no clocks or refresh required-and uses dual chip select (CS1/CS2) with hierarchical power-down: CS2 deactivates CS1, enabling precise low-power standby control. Its L-version architecture integrates data retention circuitry that maintains memory state at VCC ≥ 2.0 V across full military temperature range.

Input and output pins are TTL-compatible (VIH = 2.2 V min, VOL = 0.4 V max at IOL = 8 mA), and all DC/AC specifications-including tAA = 25 ns, tRC = 25 ns, ISB = 5 µA (typ), and ICC = 110 mA (max)-are guaranteed over –55°C to +125°C per MIL-STD-883 Class B.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 8K × 8-bit (65,536 bits), byte-wide parallel interface
Access Time (tAA) 25 ns max - defines minimum address setup-to-data-valid delay in read cycles
Data Retention Voltage 2.0 V min - enables battery-backed operation during main power loss
Standby Current (ISB) 5 µA typical - ultra-low quiescent draw in deselected mode with CS1 HIGH or CS2 LOW
Operating Voltage 5.0 V ±10% - single-supply compatibility with legacy 5 V TTL/CMOS systems
Temperature Range –55°C to +125°C - qualified to MIL-STD-883 Class B for mission-critical environments
I/O Interface TTL-compatible inputs/outputs - eliminates level-shifting in mixed-logic designs

Pinout & Package

Package: 28-pin 600 mil CERDIP (CD28), hermetically sealed ceramic dual in-line package with glass-sealed leads, rated for high-reliability military applications.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Inputs 13-bit address bus selecting one of 8K memory locations
I/O0–I/O7 Bi-directional Data Bus 8-bit parallel data path; high-impedance when CS inactive or OE/WE disabled
CS1, CS2 Chip Select Inputs CS1 active LOW and CS2 active HIGH enable device; CS2 LOW forces standby regardless of CS1
WE Write Enable LOW initiates write cycle; HIGH enables read or high-Z output state
OE Output Enable LOW enables data output; HIGH places I/O pins in high-impedance state
VCC, GND Power Supply Single 5 V supply with dedicated ground; decoupling required per MIL-STD-883 layout guidelines

Key Features

Feature Design Value
Battery backup data retention Maintains stored data at VCC ≥ 2.0 V across full military temperature range without external circuitry
Dual hierarchical chip select CS2 overrides CS1: CS2 LOW forces immediate low-power standby, enabling deterministic power gating
Three-state TTL-compatible I/O Direct interface to 5 V TTL microprocessors and peripherals without level shifters or pull-ups
Zero-refresh static operation No clock, timer, or external refresh controller needed - simplifies system timing and reduces BOM count
MIL-STD-883 Class B compliance Qualified for high-reliability applications including aerospace, defense electronics, and space-qualified subsystems

Applications

Avionics Flight Control Memory Tactical Radios with Secure Boot

Use Scenario: Stores real-time flight parameter lookup tables and control algorithm coefficients in fly-by-wire systems requiring uninterrupted memory integrity during power transients.

IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical firmware and calibration data; retains content during brownout via 2 V backup threshold.

Use Value: Eliminates need for external backup battery management circuitry while meeting DO-254 DAL-A timing and reliability requirements.

Use Scenario: Holds encrypted boot image and cryptographic keys in software-defined radios deployed in battlefield EMI environments.

IC Role / Device Role / Timing Role: High-speed, radiation-tolerant memory for secure boot sequence execution; accessed under MIL-STD-461F-compliant power rails.

Use Value: 25 ns access enables sub-microsecond key retrieval; military temp rating ensures operation inside sealed, conduction-cooled enclosures.

Missile Guidance Onboard Computer Hardened Industrial PLC Data Cache

Use Scenario: Provides scratchpad memory for inertial navigation computation engines subjected to high-G launch vibration and thermal shock.

IC Role / Device Role / Timing Role: Low-latency, zero-refresh SRAM interfaced directly to radiation-hardened FPGA fabric; operates continuously across –55°C to +125°C.

Use Value: CERDIP packaging and MIL-STD-883 qualification ensure mechanical robustness and parametric stability under extreme acceleration profiles.

Use Scenario: Caches sensor fusion results and motion control trajectories in oil & gas drilling controllers exposed to wide ambient swings and ESD events.

IC Role / Device Role / Timing Role: Standby current of 5 µA (typ) extends battery life during extended watchdog-triggered sleep modes between sensor polling intervals.

Use Value: Dual CS logic allows dynamic power gating by programmable logic, reducing average system power by >90% during idle phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
7164S25DB Standard power version: ISB = 20 µA (typ), no 2 V data retention Lacks battery backup capability; suitable only where continuous main power is guaranteed Select when lower standby current is not required and cost optimization is prioritized over retention resilience
AS6C62256-25PC 256K × 1-bit organization, 25 ns access, 3.3 V compatible, commercial temp only Higher density but narrower data bus; incompatible voltage and temperature grading Consider only for non-military upgrades where board redesign accommodates 3.3 V and revised pinout

Compared with 7164S25DB and AS6C62256-25PC, the 7164L25DB uniquely combines military temperature support, 2 V data retention, and 8-bit parallel interface in a drop-in CERDIP footprint-making it irreplaceable for legacy-replacement and safety-critical retention use cases.

Availability

7164L25DB is available at Aetrix Electronics and suitable for avionics data logging, missile guidance subsystems, and hardened industrial PLCs requiring stable component supply across extended product lifecycles and obsolescence-sensitive programs.

Supply support for 7164L25DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The 7164L25DB belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for military and aerospace systems demanding guaranteed performance under extreme environmental stress and long-term supply assurance.

FAQ

What is the guaranteed maximum access time for the 7164L25DB?

The 7164L25DB guarantees a maximum address access time (tAA) of 25 ns across its full military operating temperature range (–55°C to +125°C) when VCC = 5.0 V ±10%. This value is production-tested and specified in the AC Electrical Characteristics table under "IDT7164L" column for 25 ns speed grade. The 7164L25DB achieves this timing using advanced CMOS process technology optimized for low-latency static memory operation.

Does the 7164L25DB support true battery backup operation?

Yes, the 7164L25DB supports true battery backup operation: its L-version architecture guarantees data retention at VCC ≥ 2.0 V across –55°C to +125°C, as confirmed in Table 10 (Data Retention Characteristics). This capability is intrinsic to the 7164L25DB die design and requires no external components-enabling seamless transition to backup power during main supply failure.

Is the 7164L25DB pin-compatible with the 7164S25DB?

Yes, the 7164L25DB is pin-compatible with the 7164S25DB: both share identical 28-pin CD28 CERDIP packaging, identical pinout (A0–A12, I/O0–I/O7, CS1, CS2, WE, OE, VCC, GND), and identical logic-level definitions. The only functional differences are standby current (5 µA vs. 20 µA typ) and data retention voltage (2.0 V vs. none), making the 7164L25DB a direct upgrade for retention-critical designs.

What is the meaning of "Class B" qualification for the 7164L25DB?

"Class B" refers to MIL-STD-883 qualification level requiring full electrical testing at temperature extremes (–55°C and +125°C), mechanical shock/vibration screening, and hermeticity verification. For the 7164L25DB, this means every unit undergoes burn-in and parametric validation per Method 1015, ensuring suitability for high-reliability defense and aerospace deployments where field failure is unacceptable.

Can the 7164L25DB operate with CS1 and CS2 asserted simultaneously?

No-the 7164L25DB requires complementary chip select logic: CS1 must be LOW and CS2 must be HIGH for normal read/write operation. If both are asserted (CS1 = LOW, CS2 = HIGH), the device functions normally. However, if CS2 goes LOW while CS1 remains LOW, the 7164L25DB immediately enters standby mode regardless of WE/OE states-a feature confirmed in the Truth Table (Table 2) and explicitly documented as hierarchical power control.

7164L25DB Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

7164L25DB FAQ

1.How can I place an order for 7164L25DB through Aetrix?

Please submit a Request for Quotation (RFQ) for 7164L25DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 7164L25DB reliable?

The price and inventory of 7164L25DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L25DB is usually 5 days.

3.What payment methods are accepted for 7164L25DB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L25DB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 7164L25DB?

7164L25DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 7164L25DB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 7164L25DB?

For technical support, including 7164L25DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L25DB requirements.

6.How does Aetrix verify that 7164L25DB is sourced from the original manufacturer or authorized distributors?

All 7164L25DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L25DB meets industry standards.

7.What is the process for return or replacement of 7164L25DB?

All 7164L25DB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L25DB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 7164L25DB part is unused and in its original packaging.

Return procedure for 7164L25DB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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