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Renesas 7164L25TDB
- Part No.:
- 7164L25TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.300", 7.62mm)
- Datasheet:
-
7164L25TDB.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,236
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Product details
Overview
7164L25TDB from Renesas Electronics is a 64K (8K × 8-bit) low-power CMOS static RAM with 25 ns maximum address access time, TTL-compatible I/O, three-state outputs, and battery backup data retention down to 2 V. It operates from a single 5 V supply and supports military temperature range (–55°C to +125°C) in a 28-pin CERDIP package.
For engineers reviewing the 7164L25TDB datasheet, 7164L25TDB pinout, 7164L25TDB application, or 7164L25TDB equivalent, key selection criteria include standby current (≤5 µA), data retention voltage (2.0 V), dual chip select power-down control, and MIL-STD-883 Class B compliance for high-reliability embedded systems.
Technical Context
The 7164L25TDB uses fully static asynchronous architecture-no clocks or refresh required-and features two independent chip select inputs (CS1, CS2) enabling flexible power management: CS1 HIGH or CS2 LOW forces automatic entry into low-power standby mode. The L-version adds guaranteed data retention at VCC ≥ 2.0 V across full military temperature range.
Its input/output structure includes TTL-compatible thresholds (VIH = 2.2 V min, VIL = 0.8 V max), three-state bidirectional I/O0–I/O7, and write enable (WE) and output enable (OE) controls supporting both WE-controlled and CS-controlled write cycles per AC timing specifications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8K × 8-bit (65,536 bits), byte-wide parallel interface |
| Access Time (tAA) | 25 ns max - defines minimum time from valid address to stable data output during read |
| Supply Voltage (VCC) | 4.5 V to 5.5 V - single 5 V rail simplifies power design; no auxiliary supplies needed |
| Data Retention Voltage | 2.0 V min - enables battery backup operation without external regulators or supervisors |
| Standby Current (ISB) | 5 µA max at TA = +125°C - critical for low-power hold modes in mission-critical systems |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B for aerospace and defense applications |
| Input/Output Compatibility | TTL-compatible - eliminates level-shifting circuitry when interfacing with legacy microcontrollers and logic |
Pinout & Package
7164L25TDB is housed in a 28-pin 300 mil ceramic dual in-line package (CERDIP), designated SD28 in Renesas ordering nomenclature. This hermetically sealed package ensures long-term reliability under thermal cycling and high-humidity conditions typical of military deployments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus selecting one of 8,192 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | Three-state CMOS I/O pins shared for read and write; high-impedance when deselected |
| CS1, CS2 | Chip Select Inputs | Active-LOW (CS1) and active-HIGH (CS2); both must be asserted for device enable; either can trigger standby |
| WE | Write Enable | Active-LOW control for write operations; latches data on falling edge when CS active |
| OE | Output Enable | Active-LOW control for output drivers; enables read data only when CS active and OE LOW |
| VCC, GND | Power Supply | Single 5 V supply with dedicated ground; decoupling required per MIL-STD-883 layout guidelines |
| NC | No Connect | Pin 13 is unconnected - must remain floating; not bonded internally |
Key Features
| Feature | Design Value |
|---|---|
| Low-Voltage Data Retention | Operates down to 2.0 V VCC - enables seamless transition to backup battery without data loss |
| Dual Chip Select Power Control | CS1 HIGH or CS2 LOW independently triggers standby - supports hierarchical power gating in multi-SRAM systems |
| MIL-STD-883 Class B Compliance | Fully tested per military screening including burn-in, temperature cycling, and hermeticity - validated for flight-critical use |
| TTL-Compatible Interface | VIH ≥ 2.2 V, VIL ≤ 0.8 V - interoperable with 5 V microprocessors (e.g., 80C86, Z80) without level shifters |
| 28-Pin CERDIP Package | SD28 footprint - provides superior thermal stability and moisture resistance vs. plastic DIP or SOJ variants |
Applications
| Avionics Flight Control Memory | Tactical Radio Baseband Buffer |
|---|---|
|
Use Scenario: Stores real-time sensor fusion coefficients and flight control lookup tables in airborne inertial navigation units. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical configuration data during engine start-up and brown-out events. Use Value: 2.0 V data retention ensures zero data loss during 5 V main rail interruption; MIL-STD-883 qualification guarantees operation at –55°C to +125°C. |
Use Scenario: Buffers digital baseband samples between ADC/DAC and FPGA in manpack and vehicular radios. IC Role / Device Role / Timing Role: High-speed parallel memory interfacing directly with FPGA fabric via 8-bit data bus and 25 ns access. Use Value: 25 ns tAA enables sustained 40 MB/s throughput; three-state I/O prevents bus contention during DMA transfers. |
| Secure Crypto Module Key Storage | Artillery Fire Control System Cache |
|
Use Scenario: Holds decrypted session keys and ephemeral cryptographic parameters in tamper-resistant HSMs. IC Role / Device Role / Timing Role: Low-leakage SRAM cell array with <5 µA ISB - minimizes detectable power side-channel emissions. Use Value: Sub-5 µA standby current reduces thermal signature; hermetic CERDIP package resists physical probing attacks. |
Use Scenario: Caches ballistic solution coefficients and GPS-aided trajectory corrections in mobile artillery fire control computers. IC Role / Device Role / Timing Role: Radiation-tolerant memory storing mission-critical targeting data during high-G firing sequences. Use Value: MIL-STD-883 Class B screening ensures immunity to mechanical shock up to 1,500 g; 28-pin CERDIP withstands vibration spectra per MIL-STD-810. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 7164S25TDB | Standard power version: ISB = 10 µA max (vs. 5 µA for L-version); no 2 V data retention | Suitable for non-battery-backed systems where lowest standby current is not required | Select when cost sensitivity outweighs ultra-low-power needs and backup capability is unnecessary |
| CY62167EV30LL-45ZSXIT | 16 Mbit (2M × 8) density, 45 ns access, industrial temp only (–40°C to +85°C), SOIC-32 package | Higher density but slower speed and narrower temperature range; no military qualification | Consider only for commercial/industrial upgrades requiring more memory, not for drop-in replacement or military use |
Compared with 7164S25TDB, the 7164L25TDB delivers half the standby current and enables battery backup - essential for fail-safe hold functionality. Versus CY62167EV30LL-45ZSXIT, it trades density and package modernity for military-grade reliability, faster access, and true data retention capability.
Availability
7164L25TDB is available at Aetrix Electronics and suitable for avionics, secure communications, artillery fire control, and other high-reliability applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 7164L25TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 7164L25TDB belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for military, aerospace, and industrial systems demanding guaranteed data retention, MIL-STD-883 qualification, and hermetic packaging.
FAQ
What is the maximum operating temperature range for the 7164L25TDB?
The 7164L25TDB is rated for operation from –55°C to +125°C and is fully qualified per MIL-STD-883 Class B. This military-grade temperature range is confirmed in the Renesas datasheet Section "Recommended Operating Temperature and Supply Voltage" and applies specifically to the DB (CDIP) and TDB (CERDIP) package variants.
Does the 7164L25TDB support true data retention during power loss?
Yes, the 7164L25TDB supports guaranteed data retention at VCC ≥ 2.0 V across its full military temperature range. This feature is exclusive to the "L" (low-power) variant and is documented in Table 10 ("Data Retention Characteristics") of the Renesas datasheet, with ICCDR ≤ 60 µA at +125°C.
What is the function of the NC pin on the 7164L25TDB?
Pin 13 on the 7164L25TDB is designated NC (No Connect) and is not bonded internally. It must remain electrically floating in the PCB layout - connecting it to VCC, GND, or any signal violates the device's electrical specification and may cause functional failure or increased leakage.
How does chip select behavior differ between CS1 and CS2 on the 7164L25TDB?
CS1 is active-LOW and CS2 is active-HIGH. Both must be asserted simultaneously for normal operation. However, CS2 going LOW will force standby regardless of CS1 state, while CS1 going HIGH alone also forces standby - giving designers two independent paths to low-power mode per the Truth Table in Section "Truth Table(1,2,3)".
Is the 7164L25TDB pin-compatible with the 7164S25TDB?
Yes, the 7164L25TDB and 7164S25TDB share identical pinout, package (SD28 CERDIP), and logic-level compatibility. They differ only in standby current (5 µA vs. 10 µA) and data retention capability (2.0 V supported only on L-version), making them direct drop-in replacements where backup functionality is not required.
7164L25TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
7164L25TDB FAQ
1.How can I place an order for 7164L25TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7164L25TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7164L25TDB reliable?
The price and inventory of 7164L25TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L25TDB is usually 5 days.
3.What payment methods are accepted for 7164L25TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L25TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7164L25TDB?
7164L25TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7164L25TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7164L25TDB?
For technical support, including 7164L25TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L25TDB requirements.
6.How does Aetrix verify that 7164L25TDB is sourced from the original manufacturer or authorized distributors?
All 7164L25TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L25TDB meets industry standards.
7.What is the process for return or replacement of 7164L25TDB?
All 7164L25TDB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L25TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7164L25TDB part is unused and in its original packaging.
Return procedure for 7164L25TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7164L25TDB Tags
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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