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Renesas 7164L35DB
- Part No.:
- 7164L35DB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.600", 15.24mm)
- Datasheet:
-
7164L35DB.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,117
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Product details
Overview
The 7164L35DB from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 35 ns maximum address access time, TTL-compatible I/O, single 5V supply operation, and battery backup data retention down to 2V. It features dual chip select (CS1/CS2) for low-power standby mode and three-state outputs, deployed in high-reliability embedded systems requiring deterministic timing and non-volatile data hold during brownout.
For engineers reviewing the 7164L35DB datasheet, 7164L35DB pinout, 7164L35DB application, or 7164L35DB equivalent, this page delivers verified electrical specs, military temperature range compliance (–55°C to +125°C), CERDIP package details, DC/AC timing parameters, and real-world use context for avionics, radar control, and hardened industrial controllers.
Technical Context
The 7164L35DB implements fully static asynchronous architecture-no clocks or refresh required-and uses advanced CMOS technology to achieve 35 ns access while maintaining compatibility with TTL logic families. Its dual chip select logic enables automatic entry into low-power standby when CS1 is HIGH or CS2 is LOW, reducing active current to ≤2 mA and standby current to ≤5 µA.
It supports battery backup via VCC retention at 2.0 V (L-version only), with guaranteed data retention over full military temperature range. All 13 address lines (A0–A12), 8 bidirectional I/Os (I/O0–I/O7), and control signals (WE, OE, CS1, CS2) are directly TTL-compatible with VIH ≥ 2.2 V and VIL ≤ 0.8 V under 5.0 V ±10% supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8K × 8-bit (65,536 bits), enabling byte-wide data bus interfacing without external multiplexing |
| Access Time (tAA) | 35 ns max (military grade, –55°C to +125°C), ensuring deterministic read latency in real-time control loops |
| Supply Voltage | 5.0 V ±10%, compatible with standard 5V logic rails and simplifying power design |
| Data Retention Voltage | 2.0 V minimum (L version only), allowing operation from backup battery or supercapacitor during main supply loss |
| Operating Temperature | –55°C to +125°C (MIL-STD-883 Class B), validated for deployment in aerospace and defense platforms |
| Package Type | 28-pin 600 mil CERDIP (CD28), hermetically sealed for moisture resistance and long-term reliability in harsh environments |
| Power Dissipation | 1.0 W max (absolute rating), supporting thermal management in dense PCB layouts |
Pinout & Package
Package: 28-pin Ceramic Dual In-line Package (CERDIP), 600 mil width, hermetic ceramic body with solderable leads per MIL-STD-883 Class B requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus accepting TTL-level inputs; selects one of 8,192 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | Three-state TTL-compatible I/O pins; direction controlled by WE and OE states |
| CS1 / CS2 | Chip Select Inputs | Dual enable logic: device selected only when CS1 = LOW AND CS2 = HIGH; CS2 powers down CS1 |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CS1/CS2 active and OE = HIGH |
| OE | Output Enable | Active-LOW output control; places I/O pins in high-impedance state when HIGH |
| VCC | Power Supply | +5V ±10% supply input; powers core logic and I/O drivers |
| GND | Ground Reference | 0V return path for all internal circuits and I/O signaling |
| NC | No Connect | Pin 13 is unconnected; must remain floating or tied to GND per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby mode | ISB ≤ 5 µA at VCC = 5V, achieved automatically when CS1 = HIGH or CS2 = LOW |
| Battery backup data retention | Functional retention at VCC = 2.0 V across –55°C to +125°C, critical for mission-critical brownout recovery |
| TTL-compatible interface | VIH ≥ 2.2 V, VIL ≤ 0.8 V, VOH ≥ 2.4 V, VOL ≤ 0.4 V - eliminates level-shifting in legacy 5V systems |
| Hermetic CERDIP packaging | MIL-STD-883 Class B qualified, ensuring long-term reliability in high-humidity, high-vibration, or radiation-prone environments |
| Asynchronous static operation | No clock or refresh circuitry required - simplifies timing design and eliminates refresh-induced jitter or latency spikes |
Applications
| Avionics Flight Control Memory | Radar Signal Processing Buffer |
|---|---|
|
Use Scenario: Stores real-time sensor fusion coefficients and flight envelope limits in airborne flight computers where power interruption must not corrupt safety-critical data. IC Role / Device Role / Timing Role: Non-refreshing SRAM buffer holding configuration tables and intermediate computation results with deterministic 35 ns read/write cycles. Use Value: Battery-backed 2V retention ensures zero data loss during engine start transients or generator failure, meeting DO-254 Level A requirements. |
Use Scenario: Buffers digitized IF samples between ADC and FFT engine in ground-based radar receivers operating in extended temperature ranges. IC Role / Device Role / Timing Role: High-speed, low-latency memory staging raw radar returns prior to DSP processing, synchronized via discrete control signals. Use Value: 35 ns access time enables sub-microsecond memory turnaround, sustaining >28 MB/s sustained throughput without pipeline stalls. |
| Tactical Radio Baseband Storage | Hardened Industrial PLC Data Log |
|
Use Scenario: Holds encryption keys and channel state variables in manpack radios exposed to desert and arctic conditions (-55°C to +125°C). IC Role / Device Role / Timing Role: Secure, tamper-resistant memory node interfaced directly to microcontroller GPIOs using TTL-level signals. Use Value: MIL-STD-883 Class B qualification guarantees operational integrity under shock, vibration, and thermal cycling per MIL-STD-810G. |
Use Scenario: Captures process alarm timestamps and sensor snapshots in oil refinery DCS controllers where mains power may be unstable. IC Role / Device Role / Timing Role: Local fast-access storage for event logging, decoupled from main processor to avoid interrupt latency penalties. Use Value: Dual CS logic allows seamless transition to battery-backed retention mode within 100 ns of AC loss detection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 7164S35DB | Standard power version (ICC active ≤ 40 mA vs. L-version ≤ 25 mA); no 2V data retention capability | Suitable for non-battery-backed systems where lower standby current is not required | Select when cost sensitivity outweighs need for brownout data hold; identical pinout and timing |
| IS61LV25616AL-10TLI | 3.3V-only supply, 10 ns access, 256K × 16 organization, TSOP-44 package | Targets modern low-voltage embedded designs; incompatible voltage and pinout | Choose only if migrating to 3.3V architecture and higher density; requires PCB redesign and logic level translation |
Compared with 7164S35DB and IS61LV25616AL-10TLI, the 7164L35DB uniquely delivers military-temperature 35 ns performance with 2V battery backup in a hermetic CERDIP package-making it irreplaceable for legacy 5V systems requiring guaranteed data integrity under power fault conditions.
Availability
The 7164L35DB is available at Aetrix Electronics and suitable for avionics flight control, radar signal buffering, tactical radio baseband storage, and hardened industrial PLC data logging requiring stable component supply across extended lifecycle programs.
Supply support for 7164L35DB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The 7164L35DB belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for military, aerospace, and industrial applications demanding MIL-STD-883 qualification, wide temperature operation, and deterministic static memory behavior.
FAQ
What is the maximum operating temperature range for the 7164L35DB?
The 7164L35DB is rated for –55°C to +125°C operation and complies with MIL-STD-883 Class B environmental testing. This specification is confirmed in the Absolute Maximum Ratings table and supported by AC/DC characterization across the full military temperature range. The 7164L35DB maintains 35 ns access time and 2V data retention throughout this range.
Does the 7164L35DB require an external clock or refresh circuit?
No, the 7164L35DB uses fully static CMOS architecture and requires no clock or periodic refresh. It retains data indefinitely as long as power is applied above 2.0 V (or 4.5 V for normal operation). This eliminates timing jitter, refresh overhead, and associated controller complexity-key advantages over DRAM in deterministic systems.
What package type does the 7164L35DB use, and is it lead-free?
The 7164L35DB is supplied in a 28-pin 600 mil CERDIP (CD28) package, hermetically sealed per MIL-STD-883 Class B. Per Renesas ordering information, "G" suffix denotes green (lead-free) compliance. The 7164L35DB does not carry the "G" suffix, indicating it is not RoHS-compliant; leaded solder processing is required.
How does the dual chip select (CS1/CS2) logic function on the 7164L35DB?
CS1 and CS2 operate as complementary enables: the device is selected only when CS1 = LOW AND CS2 = HIGH. If CS1 goes HIGH or CS2 goes LOW, the 7164L35DB enters low-power standby (ISB ≤ 5 µA). Critically, CS2 can power down CS1-meaning CS2 takes precedence in disabling the device, enabling hierarchical power control in multi-SRAM systems.
Can the 7164L35DB be used with a 3.3V system?
No-the 7164L35DB is specified exclusively for 5.0 V ±10% operation (4.5 V to 5.5 V). Its TTL-compatible inputs require VIH ≥ 2.2 V and VIL ≤ 0.8 V, and its outputs drive to VOH ≥ 2.4 V and VOL ≤ 0.4 V under 5V supply. Interfacing with 3.3V logic requires level translation; direct connection risks undervoltage operation and data corruption.
7164L35DB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
7164L35DB FAQ
1.How can I place an order for 7164L35DB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7164L35DB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7164L35DB reliable?
The price and inventory of 7164L35DB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L35DB is usually 5 days.
3.What payment methods are accepted for 7164L35DB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L35DB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7164L35DB?
7164L35DB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7164L35DB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7164L35DB?
For technical support, including 7164L35DB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L35DB requirements.
6.How does Aetrix verify that 7164L35DB is sourced from the original manufacturer or authorized distributors?
All 7164L35DB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L35DB meets industry standards.
7.What is the process for return or replacement of 7164L35DB?
All 7164L35DB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L35DB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7164L35DB part is unused and in its original packaging.
Return procedure for 7164L35DB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7164L35DB Tags
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