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Renesas 7164L35TDB
- Part No.:
- 7164L35TDB
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.300", 7.62mm)
- Datasheet:
-
7164L35TDB.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:1,176
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Product details
Overview
7164L35TDB from Renesas Electronics is a 64K (8K × 8-bit) high-speed CMOS static RAM with 35 ns maximum address access time, TTL-compatible I/O, single 5V supply operation, and battery backup data retention down to 2V. It features dual chip select (CS1/CS2) for low-power standby mode and is designed for military-grade embedded systems requiring reliable non-refresh memory in harsh environments.
For engineers reviewing the 7164L35TDB datasheet, 7164L35TDB pinout, 7164L35TDB application, or 7164L35TDB equivalent, this page delivers verified timing specs, military temperature compliance (–55°C to +125°C), package-specific pin mapping for SD28 CERDIP, and real-world substitution guidance - all grounded in Renesas' official 7164S/L datasheet revision Jul.30.20.
Technical Context
The 7164L35TDB implements fully static asynchronous logic with no clock or refresh required. Its dual chip select architecture enables automatic entry into low-power standby when CS1 is HIGH or CS2 is LOW, reducing ICCSB to 5 µA (typ.) at 5V.
As the L-version variant, it supports data retention at VCC as low as 2.0V across full military temperature range (–55°C to +125°C), with guaranteed tCDR = 0 ns and ICCDR ≤ 300 µA (MIL) per datasheet Table 10. All 28 pins are TTL-compatible with VIH ≥ 2.2V and VIL ≤ 0.8V under 5V ±10% supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 65,536 bits (8K × 8-bit organization) - supports byte-wide data bus interfacing without external demultiplexing. |
| Access Time (tAA) | 35 ns max (military grade) - enables direct interface with 20 MHz microcontrollers or legacy bus systems. |
| Supply Voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails; no separate VDD/VSS regulation needed. |
| Data Retention Voltage | 2.0 V min (L-version only) - sustains stored data during brown-out or battery-backup operation without volatile loss. |
| Operating Temperature | –55°C to +125°C - qualified to MIL-STD-883 Class B for aerospace, defense, and downhole industrial use. |
| Standby Current (ISB) | 5 µA typical at 5V - reduces system power budget during idle cycles in battery-constrained platforms. |
| Package | 28-pin 300 mil CERDIP (SD28) - hermetically sealed ceramic package with proven reliability in high-reliability applications. |
Pinout & Package
7164L35TDB is housed in a 28-pin 300 mil CERDIP (package code SD28), featuring a hermetic ceramic dual-in-line construction with 0.3-inch body width and 0.1-inch lead pitch. Pin 1 is marked by a dot on the top surface per Renesas' updated pin configuration diagram (Jul.30.20).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus accepting 0–8191 for full 8K-word selection; fully static, no setup/hold timing constraints. |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit TTL-compatible I/O lines with three-state outputs controlled by OE/CS; supports read/write multiplexing on same pins. |
| CS1, CS2 | Chip Select Inputs | Dual active-low (CS1) / active-high (CS2) enables hierarchical memory banking and automatic standby when either signal deactivates. |
| WE | Write Enable | Active-low control for write cycles; latches data on falling edge when CS1/CS2 are asserted - no external write strobe needed. |
| OE | Output Enable | Active-low gate for output drivers; allows read data to appear on I/O lines only when enabled, preventing bus contention. |
| VCC, GND | Power Supply | Single 5V supply with dedicated ground; decoupling recommended per Renesas layout guidelines for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup data retention | Operates down to 2.0V VCC while preserving memory contents - eliminates need for external backup batteries or supercaps in mission-critical hold modes. |
| Low-power standby mode | Automatic ISB reduction to 5 µA (typ.) when CS1 HIGH or CS2 LOW - simplifies power sequencing in multi-chip systems. |
| TTL-compatible I/O | VIH ≥ 2.2V, VIL ≤ 0.8V, VOH ≥ 2.4V, VOL ≤ 0.4V - interfaces directly with legacy 5V microcontrollers and FPGAs without level shifters. |
| MIL-STD-883 Class B compliance | Fully tested per military screening including temperature cycling, burn-in, and hermeticity - certified for flight-critical avionics and defense electronics. |
| Three-state outputs | OE-controlled high-impedance state prevents bus conflicts during shared-memory arbitration - essential for multi-master bus architectures. |
Applications
| Avionics Flight Control Systems | Tactical Radios |
|---|---|
|
Use Scenario: Real-time storage of sensor calibration tables and flight control coefficients in airborne computers operating across –55°C to +125°C ambient. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical firmware parameters during engine start-up transients and power interruptions. Use Value: 2V data retention ensures zero data loss during 5V rail collapse; 35 ns access meets deterministic response deadlines in DO-254-compliant systems. |
Use Scenario: Secure key storage and packet buffering in encrypted HF/VHF radios deployed in desert and arctic field conditions. IC Role / Device Role / Timing Role: Military-grade memory for cryptographic key material and protocol stack buffers requiring tamper-resistant, radiation-tolerant storage. Use Value: MIL-STD-883 Class B qualification guarantees operation under shock, vibration, and thermal stress; CERDIP package resists moisture ingress. |
| Downhole Oil & Gas Sensors | Spacecraft Onboard Telemetry |
|
Use Scenario: Logging memory in MWD (Measurement While Drilling) tools exposed to >150°C wellbore temperatures and high-pressure hydrocarbon environments. IC Role / Device Role / Timing Role: High-reliability SRAM storing real-time formation evaluation data before transmission to surface units. Use Value: Hermetic SD28 CERDIP package withstands extreme pressure and corrosive fluids; 35 ns speed supports high-sample-rate ADC buffering. |
Use Scenario: Command history and telemetry snapshot storage in satellite subsystems where radiation-induced soft errors must be minimized. IC Role / Device Role / Timing Role: Radiation-hardened adjacent alternative (via process hardening) for short-term command queueing in attitude control units. Use Value: Zero-refresh static architecture eliminates periodic memory access that could interfere with sensitive analog measurements or star tracker operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 16Mb (2M × 8) density, 45 ns access, 3.3V core, industrial temp only (–40°C to +85°C) | Lacks military temp rating and 2V data retention; requires voltage translation for 5V systems | Select when higher density and lower power are prioritized over extended temperature and battery backup capability. |
| AS6C1008-35PCN | 1Mb (128K × 8), 35 ns access, 5V, commercial temp (0°C to +70°C), plastic DIP | No MIL-STD-883 qualification; no data retention below 4.5V; non-hermetic package | Use only in cost-sensitive, non-mission-critical commercial designs where military reliability is not required. |
Compared with CY62167EV30LL-45ZSXIT and AS6C1008-35PCN, the 7164L35TDB uniquely delivers military temperature operation, 2V data retention, and hermetic CERDIP packaging - making it irreplaceable in safety-critical, long-life, or extreme-environment deployments where continuity of stored state is non-negotiable.
Availability
7164L35TDB is available at Aetrix Electronics and suitable for avionics, tactical communications, downhole instrumentation, and spacecraft telemetry requiring stable component supply across extended lifecycle programs.
Supply support for 7164L35TDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 7164L35TDB belongs to Renesas' legacy high-reliability SRAM product line, engineered specifically for military and aerospace applications demanding guaranteed performance across extreme temperature, radiation, and mechanical stress conditions.
FAQ
What is the maximum operating temperature range for the 7164L35TDB?
The 7164L35TDB is rated for –55°C to +125°C operation and is fully compliant with MIL-STD-883 Class B environmental testing. This specification is confirmed in the "Recommended Operating Temperature and Supply Voltage" table (2967 tbl 03) and applies specifically to the military-grade 7164L35TDB variant in SD28 CERDIP packaging.
Does the 7164L35TDB support true battery backup operation?
Yes - the 7164L35TDB (L-version) guarantees data retention at VCC as low as 2.0V across its full military temperature range, with ICCDR ≤ 300 µA (MIL) per datasheet Table 10. This enables seamless transition to battery backup without data loss during main power failure.
Is the 7164L35TDB pin-compatible with other 7164 variants like 7164S35TDB?
Yes - the 7164L35TDB shares identical pinout, package (SD28), and functional interface with the 7164S35TDB. The only differences are power consumption profile (L-version has lower ISB and 2V retention) and internal process optimization; no PCB changes are required for substitution within the same speed grade.
What is the standby current specification for the 7164L35TDB?
The 7164L35TDB draws 5 µA typical standby current (ISB) when CS1 is HIGH or CS2 is LOW at VCC = 5V and TA = +25°C, as specified in DC Electrical Characteristics Table 7 (2967 tbl 07). This value increases to ≤ 200 µA at maximum military temperature (125°C).
Which package type does the 7164L35TDB use, and is it hermetically sealed?
The 7164L35TDB uses the SD28 package: a 28-pin 300 mil CERDIP (Ceramic Dual In-line Package). As confirmed in the "Ordering Information" section (2967 drw 11) and Pin Configurations diagram (2967 drw 02), this is a hermetically sealed ceramic package qualified for high-reliability applications.
7164L35TDB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
7164L35TDB FAQ
1.How can I place an order for 7164L35TDB through Aetrix?
Please submit a Request for Quotation (RFQ) for 7164L35TDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 7164L35TDB reliable?
The price and inventory of 7164L35TDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 7164L35TDB is usually 5 days.
3.What payment methods are accepted for 7164L35TDB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 7164L35TDB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 7164L35TDB?
7164L35TDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 7164L35TDB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 7164L35TDB?
For technical support, including 7164L35TDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 7164L35TDB requirements.
6.How does Aetrix verify that 7164L35TDB is sourced from the original manufacturer or authorized distributors?
All 7164L35TDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 7164L35TDB meets industry standards.
7.What is the process for return or replacement of 7164L35TDB?
All 7164L35TDB units undergo pre-shipment inspection (PSI). If there is an issue with 7164L35TDB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 7164L35TDB part is unused and in its original packaging.
Return procedure for 7164L35TDB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
7164L35TDB Tags
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AT24C02C-XHM-T
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